Silicon dioxide deposition by atmospheric pressure and low-temperature CVD using TEOS and ozone

Article abstract of DOI:10.1149/1.2087093

Recently, tetraethoxysilane (TEOS) is again attracting attention as one of the organosilicon materials because of the better film quality. We report characteristics of the film deposited by an atmospheric pressure and low-temperature CVD process using TEO

Full text of DOI:10.1149/1.2087093

Downloaded on 2014-11-09 to IP 129.49.23.145 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.49.23.145 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.49.23.145 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.49.23.145 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.49.23.145 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).