Journal of the Electrochemical Society p. 238 - 246 (1976)
Update date:2022-08-29
Topics:
Gaind
Ackermann
Nagarajan
Bratter
When SiO//2 is deposited from the SiH//4CO//2-HCl-H//2 system at approximately 1000 C, the resulting films are equivalent to or better than dry O//2 grown SiO//2 in electrical properties. The addition of HCl to the SiH//4-CO//2-H//2 system reduces the Q//
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