091903-2
Haranath, Khan, and Chander
Appl. Phys. Lett. 89, 091903 ͑2006͒
FIG. 2. Room-temperature photoluminescence ͑PL͒ spectra of
3
+
͑
Ca,Zn͒TiO :Pr phosphor ͑a͒ with and ͑b͒ without addition of nanosized
3
3
+
FIG. 3. Relative afterglow intensities of ͑Ca,Zn͒TiO :Pr phosphor ͑a͒
3
SiO2 powder. Inset shows the PL spectrum of intrinsic SiO2 powder re-
corded at 328 nm excitation.
with and ͑b͒ without addition of nanosized SiO2 powder. Inset shows the
mechanism of persistent luminescence.
host lattice and excitonic broadband in the range of
intrinsic silica powder recorded at 328 nm. It is observed that
UV excitation results in low intensity PL band ranging from
300–350 nm is observed in the excitation spectrum with a
maximum at 328 nm. The emission corresponding to this
excitation consisting of a single narrow band ͑full width at
half maximum of 45 eV at RT͒ peaking at 614 nm is ob-
served for both the samples prepared with and without nano-
4
00 to 700 nm. It has also been found that the observed PL
spectral feature is hardly dependent on the wavelength
16,18
͑
200–400 nm͒ of the UV excitation. Glinka et al.
sug-
gested that PL emission band is mainly attributed to non-
bridging oxygen hole centers and hydrogen related species
present on the surface of nanosized silica particles. Since the
silica powder has a weak absorption feature below 350 nm, it
is quite likely that the observed weak PL is attributed to the
one-photon excitation process from the midgap states asso-
ciated with the absorption, which is supposed to be created
during the sintering process.
sized SiO . The only difference is that with the addition of
2
nanosized SiO powder, the emission intensity is enhanced
2
3
+
nearly by 1.6 times. A trace doping of Pr indicates weak
absorption peaks in the range of 500–550 nm due to the
3
+
3
transition of Pr from ground state to the excited state P
J
͑
J=0,1,2͒. The characteristic emission of CZT:Pr phosphor
4
1
3+
is associated with the typical H → D transition of Pr ,
4
2
which provides an intense and narrow band emission at
14 nm. This unique red emission may offer the opportunity
to exploit novel field emission display ͑FED͒ and plasma
Figure 3 shows the room-temperature long afterglow
curves of CZT:Pr phosphors produced with and without in-
6
corporating nanosized SiO . It is interesting to note that these
2
1
3
display panel ͑PDP͒-based devices. It is also well docu-
mented that materials fired at high temperatures cannot be
defect-free. The formation of defects such as negatively
charged calcium vacancies, positively charged oxygen va-
phosphors are readily excited by ambient/or room light for
even less than 5–10 min. No appreciable photodegradation
has been observed for these samples on repeated usage/
exposure involving dark-vision applications. A distinct after-
cancies, and/or reduction of Ti4 to Ti , etc., is more likely
+
3+
19
glow mechanism proposed by Aitasalo et al., which is quite
1
4
to be observed at the surface of the CZT grains. The pres-
ence of these defects even at low concentrations can contrib-
ute to quenching of Pr3 luminescence. The role of nanosized
silica powder is identified to minimize the concentration of
the undesirable defects, by melting over the particles and
finally passivating the surface of CZT grains. This conse-
quently improved the optical performance of CZT:Pr phos-
phor in terms of augmented luminous brightness and emis-
applicable in the present system, is shown in the inset of Fig.
3. According to this, when a CZT:Pr phosphor is kept under
excitation, the energy is provided either directly to the traps
or via the conduction band and the traps are filled. The elec-
trons are thermally bleached at room temperature and con-
tribute to the electron hole recombination process. The non-
+
3
+
radiative transfer of energy results in the excitation of Pr
luminescent center and the emission results from the typical
1
5
16
3
1
sion color very close to CIE ideal red region. Glinka et al.
H → D transition. The whole process may require a close
4
2
3
+
previously reported that silica exhibits some PL bands in the
visible region under UV excitation. However, the obtained
PL spectral feature is strongly dependent on the amount and
type of residual surface OH- and H-related species on the
surface of nanosized silica powder. The concentration of the
residual OH group was rather low ͑ϳ200–400 ppm͒, which
was determined by the infrared absorption of the OH-
contact between the different defect centers and the Pr lu-
minescent center, since the conduction band is located too
high to be used for electron migration, Hence, the mecha-
nism of transfer of energy to the Pr persistent luminescent
center can be treated as that of storage phenomena observed
in wide band gap semiconductors materials and in most of
3
+
2
0
the photostimulated phosphors.
1
7
stretching bond. This indicates that most of the OH groups
at the surface of the original nanosized silica particles were
dehydroxylated during the sintering process and formed a
transparent glassy layer over the surface of the CZT:Pr phos-
In summary, we have shown that CZT:Pr phosphor pre-
pared with nanometer-sized silica particles exhibits a robust
red PL emission under ambient/room-light excitation. Al-
though the physical origin of strong red PL emission is
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phor grains. The inset of Fig. 2 shows the PL spectrum of
mainly due to the efficient energy transfer from band gap
158.125.224.133 On: Tue, 25 Nov 2014 15:09:30