C O M M U N I C A T I O N S
faceted lattice planes are displayed in Figures 2b-g in correspond-
ing sequence. Figure 2b shows the lattice image of the stem area
(marked B in Figure 2a) of the LaB
6
nanowire. The axial direction,
[111], which is the same of the growth direction, of the nanowire
has also been indicated in the figure. Figure 2c shows the lattice
image near facet C of Figure 2a, whose surface is terminated with
the (1 1 -1) lattice plane. Figure 2d shows the area marked with
letter D in Figure 2a, which has a (110) facet. Figure 2e shows a
(111) facet, which is equivalent to Figure 2c in atomic structure
with the same surface energy and is perpendicular to the nanowire
axis [111]. Figure 2f shows (211) facet corresponding to the area
marked with F in Figure 2a. It is interesting to note that facet F is
the smallest compared with others shown in Figure 2a. Area G,
shown in Figure 2g, is a facet of (100) which is a low index lattice
plane. By examining the areas covered by the various facets
characterized, we found that the (100), (110), and (111) planes are
the dominant terminating facets. Lattice planes of higher indices
appeared only as transitions between the above dominant facet
planes of low indices. This result agrees with the lowest surface
energy principle in crystal growth.
6
Though commercial LaB electron gun filaments are usually
made along the 〈100〉 direction of the crystal lattice due to the {100}
plane’s lower work function and higher symmetry, it has been
Figure 1. (a) Low-magnification TEM image of a LaB6 nanowire. (b-d)
1
Electron diffraction patterns of the same LaB6 nanowire tilted to zone axes
suggested that the 〈111〉 oriented LaB
be an even better alternative since they offer better stability.
Electric field-induced electron emission measurements on the LaB
6
single-crystalline tips might
[0 1 -1], [-1 2 -1], and [-1 4 -2], respectively. Dash lines indicate the
1
8
tilting axes about which the nanowire was rotated to obtain the needed
orientation. Circular arrows give the tilting angles, and the straight arrows
point to the tilting sequence.
6
nanowires are in progress.
In conclusion, we have developed a CVD method that has been
able to produce successfully LaB nanowires of well-characterized
6
morphology. The nanowires have a diameter around and smaller
than 100 nm and length extending to a few tens of micrometers.
The growth direction of the nanowires is its 〈111〉 lattice direction,
and they have hemispherical tips that are terminated by lattice planes
of low indices such as {100}, {110}, and {111}. The LaB
6
nanowires’ potential applications include providing thermionic
emission, field-induced emission, and thermal field-induced emis-
sion of electrons for TEM, SEM, flat panel displays, as well as
other electronic devices that require high-performance electron
sources.
References
(
(
(
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Figure 2. (a) High-resolution image of the LaB6 nanowire tip with
terminating facets labeled with letters B-G. (b-g) Lattice images of the
nanowire stem (B) and facets C-G as indicated in (a). The terminating
facets are lattice planes of low indices, such as {100} (G), {110} (D), and
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9
of the nanowire tip. The tip is hemispherical, and it is terminated
by several different lattice planes that are labeled with letters B
through G on the image. The HRTEM images characterizing these
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