Silicide formation of polycrystalline silicon by direct metal implantation

Article abstract of DOI:10.1149/1.2096763

This paper discusses an alternative method of silicide formation on poly-Si which allows a higher degree of control than conventional polycide formation methods. The technique involves the direct implantation of high doses of transition metal ions into the poly-Si layer, followed by a transient annealing step.

Full text of DOI:10.1149/1.2096763

Downloaded on 2015-05-01 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-01 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-01 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-01 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).