able to fabricate transistors with graphene-like molybdenum
chalcogenides.
Notes and references
‡ Synthesis:
Method 1: MoSe2 and WSe2 were intercalated and exfoliated in two
steps. In the first step, 100 mg MoSe2/WSe2 were weighed and soaked
in 10 ml of n-butyllithium18 in 20 ml of hexane and refluxed in a nitrogen
atmosphere for 48 h at 373 K. The intercalated samples were washed with
hexane several times to remove any excess n-butyllithium. In the second
step exfoliation of the Li-intercalated samples was carried out in distilled
water, followed by ultra-sonication for 10 min. In the process, evolution
of H2 gas occurred with the formation of an opaque suspension of the
layered selenide. The suspension was centrifuged and the solid product
was collected for further characterization. Method 2: MoSe2 layers were
prepared using a hydrothermal method wherein 1 mmol of molybdic acid,
2 mmol of selenium metal and 30 mmol of NaBH4 were taken in 10 ml of
deionised water in a 23 ml capacity of Teflon-coated autoclave and heated at
453 K for 24 h to yield few-layer MoSe2. The product obtained was washed
with ethanol and dried at 278 K and characterized further. (yield ~75%)
Method 3: Layered MoSe2 and WSe2 were prepared using selenourea as
the selenium source. In a typical synthesis, molybdic acid or tungstic acid
was ground with excess of selenourea (molybdic acid (0.032 g)/tungstic
acid (0.049 g) : thiourea (1.18 g) ∫ 1 : 48) and heated at 773 K for
Fig. 5 Raman spectra of bulk MoSe2 and graphene-like MoSe2 layers
obtained by chemical methods and inset is bulk WSe2 and graphene-like
WSe2 layers obtained by method 1.
here is similar that reported in the case of graphene analogues
of MoS2.9 The FWHM values are larger in the graphene-like
samples, the values varying from 6–8 cm-1 compared to ~4 cm-1
in bulk MoSe2. Raman spectra of graphene-like WSe2 obtained
by both the methods show softening of the bands due to the
A1g and E1g modes. Compared to the narrow bands at 175 cm-1
(E1g) and 255 cm-1 (A1g) of bulk WSe2 with FWHM values
around 3.1 and 5.1 cm-1 respectively, (see inset of Fig. 5) the
spectrum of WSe2 obtained from method 1 shows bands at 171
and 249.7 cm-1 with FWHM values of 24 and 43 cm-1. The Raman
spectrum of WSe2 layers synthesized by method 3 shows similar
softening of the Raman bands and increase in the FWHM values.
The broadening of the Raman bands is considered to be due to
phonon confinement.17
GaS and GaSe are both layered materials having mica-like
morphology. We could exfoliate bulk GaS and GaSe in N-
methylpyrrolidone (NMP) to form stable dispersions of the
materials mainly containing one to three layers. Fig. 6(a) shows
the sheet-like morphology of GaSe while Fig. 6(b) gives the AFM
image with a height profile of 1.3 nm confirming the formation of
few-layered GaSe.
◦
3 h under nitrogen atmosphere with heating rate of 20 C min-1. The
product was cooled to room temperature in a nitrogen atmosphere (yield
~60%).
Characterization: The products of the above reactions were characterized
by various techniques. X-Ray diffraction (XRD) patterns were recorded
using Cu-Ka radiation on a Rich-Siefert XRD-3000-TT diffractometer.
FESEM images were obtained using a FEI NOVA NANOSEM 600.
EDAX was carried out with the same system. TEM images and atomic
arrangement of hexagonal MoSe2 and WSe2 in Fig. 3 (no reconstruction)
were obtained from the FEI TITAN (cube) 80–300 kV aberration corrected
transmission electron microscope with a negative spherical aberration
coefficient (Cs) of ~-30 mm and a positive defocus about +8 nm, where
atomic potentials appear with bright contrast in a dark background.
AFM measurements were carried on Vecco digital instruments, di Innova.
Samples for AFM measurements were prepared by spin coating the MoSe2
and WSe2 solutions on Si substrate. Raman spectra of samples were
recoreded with a 515.5 nm Ar laser using JobinYvon Lab Ram HR
spevtrometre.
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In conclusion, it has been possible to synthesize graphene
analogues of layered metal selenides by chemical methods as well
as by liquid-phase exfoliation in NMP. The chemical methods
employed here can be extended to obtain graphene analogues
of other layered materials. These graphene-like materials may
find applications in the fabrication of devices. We have been
10324 | Dalton Trans., 2011, 40, 10322–10325
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The Royal Society of Chemistry 2011
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