ELECTRICAL AND DIELECTRIC PROPERTIES OF CHARGE TRANSFER COMPLEXES
2417
Activation energy, exponential factor and optical band gap
for [(Nor)(PA)], [(Cip)(PA)], and [(Nor)(DNB)] complexes
CONCLUSIONS
1) Semiconductor behavior was observed for all
(
three studied complexes.
∆
E
1
, eV
∆E
at low
tempature
2
, eV
Optical
band gap
w , eV
H
Comp.
no.
Exponential
factor S
at high
tempature
(2) Regarding the activation energy for the studied
complexes, the activation thermal energy ∆E of II is
higher than that for I and III.
I
0.03
0.29
0.68
0.58
0.700
0.780
0.713
0.55
0.76
0.58
(
3) In addition, the conduction mechanism in the
0
.08
three studied complexes is considered to be due to
correlation barrier hopping.
II
III
0.03
(
4) The dielectric constants of I, II, and III are
relatively high, of value about 250.
5) At low frequency, the dielectric constant of all
studied complexes tend to decrease sharply, may be
due to the polarization resulting from the
heterogeneous structure.
exponential factor, S, can be obtained by plotting ln σ(ω)
against ln ω along the dispersion region where a
straight line is produced. From the slope of the
obtained straight line, S has been obtained. Since the
value of S decreases with the increasing of temperature
as shown in Figs. 3a–3c, the conduction mechanism is
considered to be due to correlation barrier hopping.
According to this model S can be written as Eq. (3)
(
(
6) The dielectric constant of I, II, and III seem to
be frequency independent at high frequency, that may
be attributed to low mobility of charge carriers which
can not follow the applied field.
[25]
(
7) It is noticed that the dielectric loss of all three
S = 1 – (6K T/w
B H
),
(3)
complexes is continuously decreasing with frequency
in the range of studied frequency.
where w is barrier height substitution for K , T, and S,
H
B
w was calculated for each complex and recorded in
the table.
H
REFERENCES
1
2
3
4
5
6
7
8
9
. Kosower, E.M., Prog. Phys. Org. Chem., 1965, vol. 3,
Dielectric properties. For all three complexes, the
dielectric constant and dielectric loss (ε' and ε'') were
measured as a function of frequency of applied electric
field at different temperatures.
p. 81.
. Fla, F.P., Palou, J., Valero, R., Hall, C.D. and Speers, P.,
JCS Perkin Trans., 1991, vol. 2, p. 1925.
. Yakuphanoglu, F. and Arslan, M., Opt. Mater., 2004,
vol. 27, p. 29.
It has been found that all three complexes have
similar trend of the variation of the dielectric constant
against frequency at different temperature. This
dependence is depicted by Figs. 4a–4c where the
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increasing of applied field frequency. In the range of
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1
Figures 5a–5c represents the frequency dependence
of the dielectric loss ε'' at temperature equal to 323 K.
It is noticed that the dielectric loss of I, II, and III is
continuously decreasing with frequency in the studied
range of frequencies.
11. Jones, G. and Jimenez, J.A.C., Tetrahedron Lett., 1999,
vol. 40, p. 8551.
12. Smith, G., Bott, R.C., Rae, A.D., and Willis, A.C., Aust.
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RUSSIAN JOURNAL OF GENERAL CHEMISTRY Vol. 83 No. 12 2013