
Applied Physics Letters p. 368 - 370 (1994)
Update date:2022-08-16
Topics:
Moore, J. F.
Strongin, D. R.
Comita, P. B.
Ruckman, M. W.
Strongin, Myron
Pure alumina were deposited on a variety of substrates by using ultraviolet laser irradiation at 4.5 eV to start reactions from a condensed mixture of trimethylaluminum (TMA) and water, held at 80 K. Development was attained with dimethylaluminum hydride and Al(hfa)3 as the aluminum containing precursors, but with considerable contamination in the ensuing films. However, it was observed that these films, in both cases, were not as thick as those grown with TMA and water. This suggested that the primary mechanism of film deposition was by direct TMA photodissociation. Moreover, the nature of the experiments presented here indicated direct photoexcitation mechanism in the condensed layer, in contrast with earlier synchrotron radiation study where the mechanism was believed to be due chiefly to energetic secondary electrons from the substrate.
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