Dalton Transactions
ARTICLE
DOI: 10.1039/C 2072G
Jou al Name
5DrnT0
1
refinement was performed with the program package TOPAS Electronic Supplementary Information (ESI) available: [DSC studies, Hꢀ
4
.2 from Bruker.
NMR spectroscopy studies, Rietveld refinements, SAED pattern, SEM
pictures]. See DOI: 10.1039/b000000x/
SEM Analysis. Scanning electron microscopy (SEM) studies
were carried out on a Jeol JSM 6510 equipped with an energyꢀ
dispersive Xꢀray spectroscopy (EDX) device (Bruker Quantax
1
2
M. H. Elsheikh, D. A. Shnawah, M. F. M. Sabri, S. B. M. Said, M. H.
Hassan, M. B. A Bashir and M. Mohamad, Renewable Sustainable
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4
00).
TEM Analysis. TEM studies were conducted on transmission
electron microscopes (i) FEI Philips CM30 T/LaB operated at
3
kV. Both microscopes are equipped Gatan CCD’s for image
recording and with Thermo NSS systems for EDS analysis
using a Si(Li) Nanotrace and a HPꢀGe EDS detector,
respectively.The samples were prepared on perforated carbon
foils without further grinding.
6
00 kV and (ii) FEIꢀPhilips CM300 UT/FEG operated at 300
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We investigated the suitability of two possible single source
precursors, (Et Bi) Te
based synthesis of Bi Te3 nanoparticles. The thermal
5
V. Stavila, D. B. Robinson, M. A. Hekmaty, R. Nishimoto, D. L.
1 and Et BiTeEt 2, for the solutionꢀ
2
2
2
Medlin, S. Zhu, T. M. Tritt and P. A. Sharma, ACS Appl. Mater.
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decomposition pathways of both precursors were elucidated by
HꢀNMR spectroscopy and differential scanning calorimetry
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(
DSC). Thermolysis of
1
in DIPB led to the formation of Bi Te3
4
at 80 °C and mixtures of Bi Te and elemental Bi at higher
4
3
temperatures, while thermolysis of in situ generated
2 in DIPB
8
a) K. Knapas, T. Hatanpää, M. Ritala and M. Leskelä, Chem. Mater.,
or OA gave pseudoꢀcubic Bi Te particles, whose size increase
2
2
010, 22, 1386; b) S. Zastrow, J. Gooth, T. Boehnert, S. Heiderich,
with increasing reaction time. To the best of our knowledge,
this is the first report of the solution based formation of Bi Te.
For all thermolysis reactions, the formation of tellurium poor
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Semicond. Sci. Technol., 2014, 29, 064003.
2
phases were observed.
1 and 2 are therefore unsuitable for the
synthesis of Bi Te , which may be attributed to the comparable
2
3
low TeꢀBi binding energy and complex decomposition
mechanism. We assume that the formation of temperature
9
S. Schulz, S. Heimann, K. Kaiser, O. Prymak, W. Assenmacher, J. T.
Brüggemann, B. Mallik and A.ꢀV. Mudring, Inorg. Chem., 2013, 52
4326.
,
stable Et Te is an efficient process for the transport of Te out of
2
1
the reaction mixture, leading to Teꢀpoor (Biꢀrich) materials.
In contrast to the single source precursors, the dual source 10 a) T. J. Groshens, R. W. J. Gedridge and C. K. LoweꢀMa, Chem.
approach using the reaction of Te(SiEt ) and Bi(NMe ) was
Mater. 1994, 6, 727; b) T. Groshens, R. Gedridge, R. Scheri and T.
3
2
2 3
successfully applied for the synth esis of multiple BiꢀTe phases
including Bi Te depending on the precursor ratio. In contrast,
Cole, in Fifteenth International Conference on Thermoelectrics
Proceedings ICT ’96, IEEE, 1996, p 430.
2
3
analogous reactions of Bi(NEt2)3 and Bi(NMeEt)3 occurred
with formation of a mixture of elemental tellurium and bismuth
and a mixture of Bi Te and tellurium, respectively, while the
1
1 Z. Stary, J. Horak, M. Stordeur and M. Stölzer, J. Phys. Chem.
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4
3
reaction of BiCl and Te(SiEt ) gave Bi Te nanoparticles. The 12 J. W. G. Bos, H. W. Zandbergen, M.ꢀH. Lee, N. P. Ong and R. J.
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3 2
2
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reaction conditions leading to phase pure material are
summarized in figure 11.
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((Figure 12 here))
4
Figure 12. Summary of the ideal reaction conditions for the
formation of phaseꢀpure binary bismuthꢀtellurium materials.
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R. V. S. R. Pullabhotla, K. Ramasamy and P. O'Brien, Thin Solid
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Acknowledgements
S. Schulz thanks the Deutsche Forschungsgemeinschaft (DFG)
for financial support of this work within the priority program
SPP 1708 (Material Synthesis near Room Temperature).
1
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Notes and references
Institute of Inorganic Chemistry and Center for Nanointegration
a
DuisburgꢀEssen
(CeNIDE),
University
of
DuisburgꢀEssen,
Universitätsstr. 5ꢀ7, Dꢀ45117 Essen, Germany. Fax: 44 0201 1833830;
Tel: 44 0201 1834635; Eꢀmail: stephan.schulz@uniꢀdue.de
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| J. Name., 2012, 00, 1-3
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