M.E. Lipi n´ ska et al. / Polyhedron 81 (2014) 475–484
479
ꢁ
1
Table 3
1060 cm
(m
C–O) are endorsed to hydroxyl, carboxyl and epoxy
a
Surface atomic percentages of materials obtained by XPS.
groups. Some of these bands are overlapped by the vibrations from
the carbon structure, at 1620 cm
ꢁ1
ꢁ1
At%
(m C@C) and at 1060 cm (C–C
skeletal tangential motions) [42]. The spectrum also confirms the
presence of higher amounts of hydroxyl and epoxy groups than
carboxylic functionalities.
Sample
C1s
O1s Si2p3/2 Br3d5/2 N1s F1s Fe2p3/2 Cl2p3/2
GO
sGOch1
75.2 24.8
75.1 23.6 1.1
75.1 23.8 0.9
75.1 23.4 1.3
75.2 24.7 0.1
74.4 20.5 0.8
0.2
0.2
0.2
0.02
–
sGOmw1
sGOmw2
sGOmw3
FeP-sGOch1
FeP-sGOmw1 72.9 21.7 0.4
FeP-sGOmw2 73.3 21.1 0.5
After the silylation, the most notorious changes in the spectral
features are related with the introduction of three bands, centered
ꢁ1
at 2920 cm
1
(m C–H) together with the shoulder at near
2.0
1.8
1.8
2.0 0.1
2.7 0.2
2.8 0.2
0.2
0.3
0.3
ꢁ1
480 cm (d C–H) in accordance with the introduction of alkyl
–
–
and alkoxy chains from grafted organosilane [42]. The series of
ꢁ1
the bands between 1200 and 1000 cm are also assigned to asym-
metric stretching vibrations of Si-O-R groups [19].
a
Determined by the areas of the respective bands in the high-resolution XPS
spectra.
The TGA curve of GO in an inert atmosphere (Fig. 5) shows that
GO is thermally stable up to ca. 250 °C, where occurs an intense
mass decrease associated with the pyrolysis of the label oxygen
groups and release of different gases (see below the TPD analyzes).
After this temperature, GO shows a progressive, slow rate mass
loss up to a total mass loss of 34% (Table 4).
The silylated materials show thermogravimetric profiles similar
to original GO (Fig. 5 and Fig. 2, SI). For material sGOch1 the strong
mass loss occurred at a slightly lower temperature relatively to GO
(Fig. 5) and from Table 4, it can be seen that the final total mass loss
increased to 37% relatively to the 34% observed for original GO.
Material sGOch2 does not show higher mass loss relatively to GO,
corroborating the very low functionalization indicated previously.
Material sGOmw2 showed the highest mass loss among the silylat-
ed materials, namely 44%, in the region 200–300 °C, and is
observed at slightly lower temperature compared with GO. Other
materials silylated with BrTMS also showed a decomposition step
in the range 200–300 °C [35].
Materials sGOmw1 and sGOmw2 show Si% in the range 0.9 –
.3% although the Br% = 0.2 is identical for the three materials.
1
Thus, the results evidence identical functionalization degree for
the three materials and attest the advantage of the microwave-
assisted synthesis relatively to conventional heating, which allows
lower consumption of time and energy. Furthermore, these results
allow concluding that there is no advantage in extending the reac-
tion time for more than 1 h in the microwave protocol.
The corresponding high resolution spectra of the relevant
elements of GO and sGOmw1 materials are collected in Fig. 3. Very
similar spectral patterns are observed for sGOch1; the correspond-
ing spectra are presented in Fig. 1a, SI.
The XPS high resolution spectrum of GO in the C1s region was
deconvoluted into four bands (Fig. 3a). The small peak at the low-
est binding energy (B.E.), at 283.7 eV is ascribed to carbon in the
2
graphitic structure and aromatic rings (sp ); the peak at 285.1 eV
Temperature-programmed desorption (TPD) was performed
monitoring the release of possible degradation fragments, namely
3
to carbon–carbon single bond in the carbon structure (sp ). The
other two peaks are associated with the presence of the oxygen-
containing groups: the peak at 286.9 eV with the hydroxyl and
epoxy/ether groups (C–O) and the smaller peak at 288.6 eV with
the carbonyl/carboxyl groups (C@O). In the O1s region spectrum
two peaks are present: a small peak at 529.3 eV is assigned to
O@C bond and a much more intense at 531.2 eV to O–C bond, sug-
gesting that hydroxyl or epoxide groups are more abundant than
the carboxylic acid groups [41].
m/z 44 (CO
42 (CH CH
lyzed temperature range the most significant fragments in GO
were CO , CO, H O, and H , while in silylated materials were CO
CO, H O and the fragment with m/z 43 from the CH CH CH moi-
ety. The results in the temperature range of 150–450 °C are shown
Fig. 3, SI, since in the temperature range of 450–750 °C no signifi-
cant gas release was observed.
2
), 28 (CO); 18 (H
2
O), 32 (O
2
), 2 (H
2
), 43 (CH
3 2 2
CH CH ),
2
2
CH ), 80 (HBr), 27 (CH
2
3
CH
2
), 94 (CH
3
Br). In the ana-
2
2
2
2
,
2
3
2
2
The C1s spectrum of sGOmw1 (Fig. 3b) shows a small increase in
the intensity of the band at 283.9 eV, which is related with the con-
tribution of C–Si band due to the grafted organosilane [16]. In the
O1s region of this material there are some shifts in the peak posi-
tions and the band at 529.4 eV is relatively more intense than the
corresponding band in GO O1s spectrum, what is a result of the
contribution of O–Si band from the grafted organosilane [19].
The Si2p spectrum shows a broad band at 103.1 eV, being a slightly
higher B.E. than the typical values observed for Si–OH and Si–O–C
bonds and was previously observed when these peaks are over-
lapped by peaks due to the presence of Si–O–Si bonds, the latter
being a consequence of polymerization or intermolecular silane
coupling [19]. Even if an anhydrous solvent was used, the highly
polar and protonic GO surface can catalyze the hydrolysis of the
methoxy groups from the organosilane and consequently, these
Si–OH groups can undergo nucleophilic attack on the silicon atom
of one other silane molecule [40]. So, it can also be considered that
some organosilane dimmers or polymers are present.
The oxygenated surface groups are thermally decomposed
releasing CO and/or CO and the decomposition temperature and
2
the type of the gas released during the analysis give information
about the nature of the groups [19]. Water molecules are present
in the interlayer space and maintain the GO structure by hydrogen
bridging. The detection of the fragment m/z 43 further confirmed
2
the occurrence of the silylation reaction. The CO release at lower
temperature (near 300 °C) is associated with the decomposition
of carboxylic acids groups, while the CO release near that temper-
ature results from the decomposition of the epoxy or non-aromatic
hydroxyl groups, since phenolic hydroxyl or quinone groups
decompose releasing CO at higher temperatures, near 800 °C, and
phenolic groups positioned in the deep basal planes are expected
to decompose at even higher temperatures. In our case these last
decompositions are above the monitoring range [19].
In Fig. 6 and in Fig. 3, SI, the TPD profiles of the materials show
that CO is the gas released in the highest amount, followed by
2
water and carbon monoxide. This observation, although commonly
observed in the TPD of GO materials [43,14], apparently contrast
with the higher number of hydroxyl groups relatively to carboxylic
groups observed by the previously discussed techniques, namely
XPS and FTIR. This can be explained considering that only non-aro-
matic hydroxyl groups and epoxy moieties are being monitored in
the studied temperature range and not the hydroxyl groups from
phenolic moieties, which are expected at higher temperatures [44].
In the Br3d3 spectrum it can be observed a band at B.E. 76.8 eV
ascribed to the presence of Br–C bond in the alkyl chain of alkyl-
bromosilane [35].
The FTIR spectrum of GO is depicted in Fig. 4 and shows peaks
related with the oxygen-containing groups present on its surface
ꢁ
ꢁ1
1
and with the carbon structure. The bands at 3460 cm
(
m
O–H),
ꢁ
1
ꢁ1
1
740 cm
(m
C@O), 1620 cm
(d O–H), 1390 cm
(d C–OH),