Table 2 Stabilities of SAMs (assembled from 0.1 mole % TEMPO-C10 and 1-octadecene) immersed in various solvents under ambient pressure
a
b
Contact angles (u)
XPS Atomic composition (%)
Solvent
CHCl
Temp.(uC)
Time (h)
2
A
R
SiO
2
Si
C
O
3
61
110
110
106
109
104
102
110
108
111
110
109
110
91
102
104
103
102
100
88
104
103
103
91
0
0
0
0
0
0
0
0
0
1
1
1
8
31
30
30
32
29
30
30
29
30
30
27
26
21
54
56
47
56
52
54
58
59
52
56
55
49
43
15
14
23
12
19
16
12
12
17
14
17
24
28
4
8
1
92
6
Toluene
Water
111
4
8
1
92
96
80
14
c
20
4
5
0
2
4
2
6
4
c
CHCl /H
3
2
O
Reflux
101
102
70
2
a
b
c
We measured the advancing (A) and receding (R) contact angles of water. We studied the Si(2p), F(1s), C(1s), and O(1s) peaks. The
wafers were refluxed for 2 h in CHCl then refluxed in H O for the indicated times.
3
2
We thank the University of Iowa, MPSF Program, Carver
Scientific Research Initiative Grants Program, and ACS-PRF for
funding. This work was partly carried out in the Center for
Microanalysis of Materials, University of Illinois, which is partially
supported by the U.S. Department of Energy under grant
DEFG02-91-ER45439. We gratefully thank Rick Haasch for his
help running the XPS.
a
Samer N. Arafat, Samrat Dutta, Mathew Perring, Michael Mitchell,
a
a
b
b
Paul J. A. Kenis and Ned B. Bowden*
a
a
Department of Chemistry, University of Iowa, Iowa City, IA 52242,
USA. E-mail: ned-bowden@uiowa.edu; Fax: +1 319 335-1270;
Tel: +1 319 335-1198
b
Department of Chemical and Biomolecular Engineering, University of
Illinois Urbana-Champaign, 600 S. Mathews Ave., Urbana, IL 61801,
USA
Notes and references
1
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2
terminated with methyl (Me) or carboxylic acid (CO H) groups. c) Water
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water drops assume rectangular shapes as they do not wet the methyl-
terminated SAMs. d) Lines of NOA-61 were patterned on a silicon wafer
by the selective wetting of NOA on acid-terminated SAMs and selective
de-wetting on methyl-terminated SAMs.
2
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5
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61) and slowly removed. Upon removal from NOA-61, the prepoly-
mer only coated the acid-terminated SAMs. The prepolymer was
cured under UV light and characterized as shown in Fig. 2d.
In conclusion, we report both a mild method to assemble well-
ordered SAMs on Si(111) and a mild method for their patterning.
These methods enable the assembly and patterning of monolayers
directly onto silicon without an intervening layer of silicon dioxide.
6
7
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3
200 | Chem. Commun., 2005, 3198–3200
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