Inorganic Chemistry
Article
synthetic conditions designed to suppress their tendency for
phase separation. The compounds combine two important
features needed for good X-ray and γ-ray detection applications,
namely, high specific densities, high atomic numbers, and wide
energy gaps of 3.26 and 2.80 eV for compounds 1 and 2,
respectively. Because of their incongruent melting nature,
however, it will be a challenge to grow large centimeter-sized
crystals of these compounds using conventional Bridgman
growth technique. Electronic-structure calculation using sX-
LDA including SOC shows that SOC of the bismuth atom
plays an important role in determining the CBM and predicts
that compound 1 has a direct band gap of 3.09 eV, while
compound 2 has an indirect band gap of 2.80 eV, in a good
agreement with the experimental results.
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ASSOCIATED CONTENT
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Supporting Information
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Further details in Table S1 and Figures S1−S7 and X-ray
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AUTHOR INFORMATION
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Notes
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The authors declare no competing financial interest.
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ACKNOWLEDGMENTS
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This work was supported by the Office of Nonproliferation and
Verification Research and Development under the National
Nuclear Security Administration of the U.S. Department of
Energy under Contract DE-AC02-06CH11357.
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dx.doi.org/10.1021/ic3023826 | Inorg. Chem. XXXX, XXX, XXX−XXX