Angewandte Chemie International Edition
10.1002/anie.201707529
COMMUNICATION
The transfer and output characteristic curves of t-C
5
-PyDI, C
5
-
T
the on/off ratios and threshold voltage (V ) are shown in Table 1,
PyDI and C
shows no mobility.
6
-PyDI (Fig. S11) were tested in glove box. t-C
6
-PyDI
where each average value was obtained from more than 20
working devices on 8 different substrates. Further optimization
5 6
was performed on the OFET devices of C -PyDI and C -PyDI
using Ag electrodes, which has a lower work function than Au.
The conditions of crystals’ growth were maintained as above for
comparison. When using Ag as the S-D electrodes, the highest
-
4
-3
-3
-3
1
1
1
1
1
1
0
0
0
0
0
0
6.0x10
0V
V
G
a)
b)
-5
c)
1.8x10
1.5x10
-
-
6
6
20V
40V
60V
80V
5.0x10
4.0x10
3.0x10
-
-
-
-
6
7
8
9
100V
120V
1.2x10-6
2
-1 -1
e
5 6
μ of C -PyDI and C -PyDI increases to 3.08 cm V s and 2.36
-
3
3
-7
2
-1 -1
9.0x10
cm V s , respectively.
-
2.0x10
-7
6.0x10
-
10
11
-3
-7
1
0
0
1.0x10
3.0x10
PyDI is the first class of pyrene diimide framework that
-
1
0.0
0.0
enables efficient charge transport. The highest electron mobility
0
20 40 60 80 100120
VG (V)
0
20 40 60 80 100 120
DS (V)
V
2
-1 -1
of
C
5
-PyDI reached up to 3.08 cm V s , which has
-
4
1
0
0
0
0
0
0
-5
-
-
-
-
-
-
3
2.4x10
0V VG
outperformed most of the reported diimides.[3b,
d)
e)
-5
3.0x10
2.5x10
2.0x10
1.5x10
1.0x10
f)
20V
1
1
1
1
1
40V
60V
80V
100V
120V
3
3
3
3
4
2.0x10-5
-
-
-
-
6
7
8
9
5
Meanwhile, the t-C -PyDI molecules exhibited lower electron
-5
1.6x10
mobility but higher one and two photon excited fluorescence
emission properties. This work illustrates that the PyDI
framework can be an excellent platform for designing new n-type
organic semiconductors with high electron mobility and good
one and two photon excited light emitting properties. It is
expected that further structural modification to the PyDI skeleton
could give even higher performance. The PyDI semiconductor
family may find more practical applications in the future
optoelectronics.
-5
1.2x10
-6
8.0x10
-
10
11
5.0x10
-6
1
0
0
4.0x10
-
0.0
1
0.0
0
20 40 60 80 100120
VG (V)
0
20 40 60 80100120
VDS (V)
Figure 5. The optical microscopy (OM) image of the crystals (a), typical
transfer (b) and output characteristics curves (c) of C -PyDI. The OM image of
the crystals (d), typical transfer (e) and output characteristics curves (f) of C
PyDI. (Ag was used as electrode).
5
6
-
Acknowledgements
5 5 6
Table 1. OFET performance data for t-C -PyDI, C -PyDI and C -PyDI
crystals.
This work is supported by the Ministry of Science and
Technology of China (2017YFA0204903), National Natural
Science Foundation of China (NSFC. 51525303, 21233001,
Compound
S-D
Electrode
Mobility
[cm V s ]
on/off
ratio
T
V (V)
2
-1 -1 [a]
2
1572086, 51625304, 21522203), 111 Project. The authors
-
4
>103
t-C
5
-PyDI
Au
2.51×10
49-60
thank beam line BL14B1 (Shanghai Synchrotron Radiation
Facility) for providing the beam time.
-
5
-5
(
8.72×10 ±0.91×10 )
Ag
Au
Ag
Au
Ag
-
-
-
Keywords: pyrene • diimide • organic semiconductors • two
photon absorption • electron transport
C
C
5
-PyDI
-PyDI
0.46(0.19±0.13)
3.08(1.92±0.19)
0.51(0.29±0.12)
2.36(2.05±0.17)
>106
>106
43-50
45-62
45-60
49-68
[
[
1]
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6
>106
2371-2378.
[
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[
a] The values in the parentheses represent average mobility ± standard
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The field effect mobility (μ) was calculated in the saturation
2
regime with the equation: IDS=μC
0
(W/2L)(V
G
T
–V ) , where the IDS
M. A. Kobaisi, S. V. Bhosale, K. Latham, A. M. Raynor, S. V. Bhosale,
Chem. Rev. 2016, 116, 11685-11796.
is the current of S-D electrodes, μ is the field effect mobility, W
and L are the width and length of the channel. The drop casted
crystalline ribbons only partially covered the channel region.
Therefore, the W and L were measured instead of using the
J. Lee, A. R. Han, J. Kim, Y. Kim, J. H. Oh, C. Yang, J. Am. Chem. Soc.
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[7]
8]
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channel dimensions of the shadow mask (Fig. S10). C
gate dielectric capacitance. The divinyltetramethyldisiloxane
bis(benzocyclobutene) (BCB) covered SiO /Si substrates
is the gate voltage
is the threshold voltage. All the devices exhibited n-type
0
is the
[
G. Xue, J. Wu, C. Fan, S. Liu, Z. Huang, Y. Liu, B. Shan, H. L. Xin, Q.
Miao, H. Chen, H. Li, Mater. Horiz. 2016, 3, 119-123.
2
-8
T. He, M. Stolte, C. Burschka, N. H. Hansen, T. Musiol, D. Kälblein, J.
Pflaum, X. Tao, J. Brill, F. Würthner, Nat. Commun. 2015, 6, 5954.
showed the capacitance of 1.1×10 F. V
and V
behaviour. The highest electron transport mobility (μ
G
T
[
[
10] N. A. Minder, S. Ono, Z. Chen, A. Facchetti, A. F. Morpurgo, Adv.
Mater. 2012, 24, 503-508.
e
) of t-C
5
-
2
-1 -1
2
-
PyDI, C
5
-PyDI and C
6
-PyDI were 2.5×10-4 cm V s , 0.46 cm V
11] Q. Zheng, J. Huang, A. Sarjeant, H. E. Katz, J. Am. Chem. Soc. 2008,
130, 14410-14411.
1
-1
2
-1 -1
s
and 0.51 cm V s , respectively. Together with the mobility,
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