S. Miyasaka et al. / Journal of Physics and Chemistry of Solids 72 (2011) 414–417
415
RAs, which were used as precursor, were obtained by reacting rare-
earth elements and P or As chips at 700 1C for 10 h and 900 1C for
5 h, respectively. The mixtures of RAs, RP, Fe , Fe and FeF in the
stoichiometric ratio were pressed into pellets, and they were
annealed at 1100 1C for 40 h. All reactions were performed in the
evacuated silica tubes, and the procedures in a highly pure Ar filled
grove box.
The samples were ground and checked by powder X-ray
diffraction using Cu Ka1 radiation at room temperature. All diffrac-
tion peaks of respective samples can be assigned to the calculated
R
FeP 1-xAs O0.90F0.10
x
8.70
8.60
1
2
O
3
2
4
4
4
3
.10
.05
.00
.95
c axis
a axis
x 0.90
Bragg peaks for the tetragonal RFeP1ꢀxAs O F0.10, indicating that
there is no impurity. The in-plane (a) and out-of-plane lattice
8
.50
constants (c) of these systems with the As concentration of x¼0–
1
.0 are obtained by using least squares fitting of the measured peak
3
positions of the powder X-ray diffraction data in 2
Electrical resistivity was measured using a conventional four-probe
method.
y ¼ 202100 .
8
8
8
.50
.40
.30
In this study, we have not determined the F concentration by the
chemical analysis. However, all the samples were synthesized by
the same procedure, and their solid state reaction were performed
in the sealed quartz tubes. So, the F concentrations in the present
systems are expected not to deviate largely from the nominal ones.
4
3
3
.00
.95
.90
c axis
a axis
In RFeAsO1ꢀy
suppressed by the F-doping [16]. The values of lattice constants are
very small in the FeAs end member of RFeP1ꢀxAs
x¼1.0, indicating that the F concentration is almost y¼0.10. In other
end member of RFePO0.90
y
F , the lattice constants of a and c are distinctly
x 0.90
O F0.10 with
F
0.10 (x¼0), the lattice constants estimated
by X-ray analysis indicates that the F concentration is almost similar
to the nominal one [17]. Moreover, the lattice constants linearly
0
0.2
0.4
0.6
0.8
1.0
x 0.90
increase with the As content x in RFeP1ꢀxAs O F0.10. These results
suggest that the actual F concentrations may be almost equal to the
x (As content)
nominal ones in the present systems.
Fig. 1. As content (x) dependence of lattice constants of a- and c-axes, indicated by
x 0.90 x 0.90
closed and open circles for LaFeP1ꢀxAs O F0.10 (a) and NdFeP1ꢀxAs O F0.10 (b).
Dashed lines are guide for eyes.
3
. Results and discussion
Fig. 1 presents the As-concentration (x) dependence of lattice
constants of a- and c-axes. All lattice constants linearly increase
with As concentration. The result proves that a solid solution of
R¼Nd system, when As content is increased from x¼0 to x¼0.60. As
well as the La system, the power n of the Nd one has minimum value
of about 1 around x¼0.60. In both systems, the n slightly increases,
but the value is still below 1.3 in the region of x40:60. The T-linear
RFeP1ꢀxAs
x
O
0.90
F
0.10 with R¼La and Nd has been successfully
prepared, and the crystal structure have been continuously chan-
ged with x.
c
resistivity is very similar to the behavior of high-T cuprates, which
strongly suggests that the conduction mechanism is governed by a
strong spin fluctuation [18]. The x dependence of power n indicates
that the chemical pressure, induced by the P/As substitution, rapidly
increases antiferromagnetic fluctuation with x up to x¼0.60. In the
region of x¼0.60–1.00, the strength of antiferromagnetic fluctuation
In contrast of the linearly structural change with As concentra-
tion x, the resistivity behaviors for these systems do not depend
monotonically on x. Figs. 2(a) and (b) represent the temperature-
dependent resistivity for R¼La and Nd compounds with various As
concentrations, respectively. The resistivity for all the samples
shows metallic behavior. In both systems, the resistivity for the
n
seems to be almost constant. As shown in Fig. 3(b), the coefficient of T
of low temperature resistivity, A is enhanced around x¼0.60 with the
increase of x in both systems. This behavior of A may be also related
with the enhancement of the antiferromagnetic fluctuation.
phosphorous end member with x¼0 (RFePO0.90
F0.10) has low
magnitude and shows small temperature dependence. With
increasing x, the residual resistivity and the temperature depen-
dence are rapidly enhanced around x¼0.40, and they have max-
imum at x¼0.60–0.80. The x-dependence of resistivity is non-
monotonic but systematic. The systematic change with x in
resistivity was observed in both systems, which indicates that a
grain boundary effect on resistivity is not serious as far as we
discuss a relative change of resistivity with x.
c
The x dependence of the critical transition temperature T seems
to be related to the above-mentioned resistivity behaviors rather
than the monotonous change of crystal structure with x. Fig. 3(c)
presents the x dependence of T
samples, the resistivity shows a sharp transition to the super-
c
for R¼La and Nd systems. In all the
conducting state, which enables us to determine T
resistivity temperatures. In the R¼La system,
c
from zero
c
gradually
T
The temperature dependence of resistivity can be expressed as
increases with x up to x¼0.60, while it is saturated or weakly
decreased above x¼0.60. As well as La system, the T of the R¼Nd
one is monotonically enhanced up to x¼0.60 by the substitution of
against x is
n
r
ðTÞ ¼ r0 þA at low temperatures, where r0 is residual resistivity, A
c
n
the coefficient of T , and n the power of temperature (T) in the low-T
resistivity ð
r
ðTÞÞ. Fig. 3(a) shows the x dependence of the power of
As for P. In the R¼Nd system, the increasing ratio of T
c
temperature in resistivity, n. For x¼0 in both of R¼La and Nd systems,
n is close to 2, indicating that the oxyphosphide end materials with
x¼0 are a conventional Fermi liquid. [17] In the R¼La system, the
power (n) rapidly decreases around x¼0.20 and reaches about unity
at x¼0.60. On the other hand, the n almost linearly decreases in the
slightly suppressed around x ¼ 0.60–0.80, and enhanced again
above x¼0.80. In all the samples with R¼La and those with R¼Nd
c
below x¼0.60, T distinctly correlated with the power of tempera-
ture in low-temperature resistivity n, i.e., the samples with high T
show the T-linear resistivity at low temperatures.
c