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studies, a carbon-based polymer with protective layer composed 98.8% at 1000 ꢀC, which was attributed to the incorporation of
of boron and silicon could provide oxidation protection to 1000 inorganic elements boron and silicon. In summary, trime-
ꢀC.39 The outermost carbon burns away under high-temperature thylsilylethynyl could be used as crosslinking groups for ther-
oxidizing environments, while silicon and boron formed SiO2 mosetting polymers and thermosets derived from it exhibit
and B2O3, respectively. Liquid B2O3 melts above 450 ꢀC40 and excellent thermal stability. We believe CBTMS has potential
can ow into cracks in the SiO2 overlayer, sealing them and utility of as matrix materials for advanced composites and
hindering oxygen access to the active oxidation sites on carbon. precursors to shaped ceramics due to the oxidative stability,
Therefore, combination silicon and boron oxide layers provide high ceramic yield.
oxidation protection to 1000 ꢀC.39 Here we believe that the
structures of B–H in carborane and Si–CH3 in silane units of
CBTMS-400 are completely oxidized into boron oxide and
Acknowledgements
silicon oxide in the surface of the material during the ceramic
We thank the National High Technology Research and Devel-
process during the ceramic process, respectively. While boron
opment Program (**863** Program) of China (No.
oxide was very hygroscopic,41 the presence of moisture in the
2015AA033802) and the National Science Foundation of China
residue resulted in the formation of B–OH bonds. So two small,
(21074017 and 51273029).
sharp peaks at 2q ¼ 15ꢀ and 28ꢀ were observed in XRD pattern,
which was a typical feature of B(OH)3.42,43 In addition, absorp-
tions at 1463 cmꢁ1 and 1195 cmꢁ1 in FT-IR spectrum can be
attributed to B–O stretching and B–OH deformation vibrations,
References
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O–Si)48 in the FT-IR spectrum conrming that CBTMS-1000 was
not composed of silicon oxide. The ceramic we obtained showed
absence of SiC or B4C crystals based oꢀn the analysis of FT-IR and
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