C O MMU N I C A T I O N S
from BTP is efficiently quenched by F3 (kqSV ) 1.9 × 106 M-1
s-1) despite having a lower triplet energy. Using this kqSV value,
the half-life for BTP emission quenching in a doped thin film of
F3 (ca. 1 M) is estimated to be 0.4 µs. Since the phosphorescent
half-life of an excited BTP molecule is 4 µs (based on a luminescent
lifetime of 5.8 µs),8 near complete phosphorescence quenching is
predicted for a BTP-doped F3 film. Quite the contrary, BTP
emission is observed for 5 wt % doped polyfluorene thin films.5e
This discrepancy comes about because of significant differences
between concentrated solid films and the dilute solution mixtures
used for our studies. First, the doping levels of phosphors in the
solid films are considerably higher than the µM to mM concentra-
tions used in the quenching experiments. The high doping concen-
trations promote phosphor aggregation;12 consequently, the reduced
intermolecular contact between F3 molecules and the dopant
complexes decreases the phosphorescent quenching rate. Second,
energy transfer between the triplets of the phosphor and F3 is most
likely an electron exchange or “Dexter” transfer process. Dexter
transfer requires a good intermolecular overlap between the pertinent
molecular orbitals of the donor and acceptor.11 Since molecular
motion is inhibited in amorphous solid films, a dopant-F3 config-
uration that gives poor Dexter energy transfer cannot readily reorient
to a configuration appropriate for efficient energy transfer. Last,
in fluid solution, the F3 and phosphor can physically separate after
energy transfer. This physical diffusion enhances quenching by
suppressing reverse energy transfer (F3 to phosphor), especially for
those phosphors (e.g., BTP and PQ) where energy transfer to the
F3 triplet state is an endothermic process. In a rigid matrix, such as
a doped thin film, physical diffusion cannot occur. In this case,
separating excited F3 and the phosphor involves energy migration
from the excited F3 to an adjacent F3, a slower process than the
competing back energy transfer. These three factors together lead
to kqSV values in doped thin films that are lower than those measured
in dilute fluid solutions.
phosphorescence quenching is less favorable due to the absence of
any low-energy triplet states.6,7 Although doped OLEDs with
moderate efficiencies have been prepared by blending conjugated
polymers with red phosphors,5c-e it becomes increasingly difficult
to use this strategy for devices emitting at higher energy since it
requires conjugated host polymers with high triplet-state energies.
A solution to this dilemma is either to use nonconjugated polymers,
such as PVK, or to design new conjugated polymers with higher
triplet energies. Such new polymer systems may then allow
fabrication of highly efficient (>10% external) polymer-based
phosphorescent OLEDs.
Acknowledgment. We thank The Universal Display Corpora-
tion (M.E.T.) and the NSF-DMR (T.H.E.) for financial support of
this work.
Supporting Information Available: Phosphorescence spectra from
the phosphors, synthesis and characterization of F3, electrochemical
properties of the compounds, and data for the Stern-Volmer analysis
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The results obtained from our quenching studies highlight an
important criterion that needs to be considered when designing
polymer-based phosphorescent OLEDs. Energy transfer from either
singlet or triplet levels of a conjugated polymer to a phosphorescent
dopant certainly looks appealing at the outset. However, one needs
also to consider the emission quenching brought about by the low-
energy triplet states of the polymer since even endothermic transfer
can effectively quench phosphorescence. High-molecular weight
polyfluorenes have conjugation lengths that are greater than that
of F3; thus, triplet-state energies are lower for the polymers (2.1
eV) than for the oligomer (2.3 eV).9 Hence, one can expect that
phosphorescence quenching will be more efficient in polyfluorenes
than in F3. With nonconjugated polymers such as PVK, however,
JA0343297
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