Angewandte
Chemie
DOI: 10.1002/anie.201107216
Functional Materials
SiO2-Surface-Assisted Controllable Synthesis of TaON and Ta3N5
Nanoparticles for Alkene Epoxidation**
Qingsheng Gao,* Sinong Wang, Yuchun Ma, Yi Tang, Cristina Giordano, and Markus Antonietti
Metal nitrides are promising materials because of their
prominent properties originating from metal–nitrogen
bonds and noble-metal-like electron features, such as thermal
stability, mechanical hardness, superconductivity, and high
catalytic performance in hydrocarbon conversion.[1] More
importantly, their bulk and surface properties are significantly
associated with the nitridation levels, which can be adjusted as
such. Taking tantalum (oxy)nitrides as the current example,
introducing N atoms into Ta2O5 brings a remarkably nar-
rowed and tunable band-gap energy, thus enabling novel
visible-light photocatalysts.[2] Meanwhile, the catalytic prop-
erties of Ta in tantalum (oxy)nitrides for nonphotocatalytic
reactions are also expected to be improved because of the
tailored nitridation and easier electron transfer from N (vs. O)
to Ta centers. However, there are still no reports on these
effects to the best of our knowledge. Significantly, such
modulation of material properties by controlled nitridation
provides a new strategy for designing novel catalysts.[2a,3]
The controllable synthesis of TaON and Ta3N5 nano-
particles (NPs) with tailored chemical composition is there-
fore an attractive goal,[2e,3a] which is, however, difficult to
achieve by current strategies because of easy overreactions of
nitridation.[4] For example, by-products of Ta3N5, Ta4N5, and
even TaN will be easily generated from further nitridation of
TaON during calcination. The traditional method using NH3
is limited for the danger associated with using NH3 at high
temperature and the complexity related to the rigid control of
gas composition, flow rate, and pressure.[4,5] Moreover,
although urea and cyanamide have been reported as safe
nitrogen sources for preparing tantalum nitrides, only impure
and deeply reduced TaN could be obtained, as an effective
control on reactions is absent.[6]
herein a new SiO2-surface-assisted strategy for the controlled
fabrication of TaON and Ta3N5 NPs, which successfully avoids
the disadvantage mentioned above. Assisted by SiO2, the
production of TaON over Ta3N5 NPs with tailored composi-
tion was achieved through calcination of Ta–urea (TaU) gels
with suitable urea/Ta ratios (RU/Ta). A mechanism is proposed
that urea is converted into carbon–nitride (CNx) species on
SiO2-surface at mild temperature,[8] which further acts as a
slow release N source for controlled nitridation. The elec-
tronic properties of Ta are tuned by the different nitridation
levels in TaON and Ta3N5 NPs, which significantly improves
the activity for alkene epoxidation, as compared to Ta2O5
NPs. This is the first time to discover that introducing N into
Ta2O5 can remarkably improve epoxidation activity because
of the easier electron transfer from N (vs. O) to Ta.
Furthermore, the controlled nitridation endows catalysts
with tunable surface basicity, noticeably influencing epoxida-
tion selectivity. Owing to the facile synthesis and prominent
catalytic behavior associated with tailored nitridation, we
believe that our effort will pave the way for designing
nanostructured catalysts of metal–nitrides.
As the key assisting agent, SiO2 NPs (5–15 nm, SBET
=
527.3 m2 gꢀ1) were added into TaU precursor, resulting in a
homogenous gel denoted as TaU/SN. After calcination under
N2 flow and following treatment with NaOH solution, highly
crystalline TaON and Ta3N5 NPs were obtained at RU/Ta values
of 1.5 and 3.0, respectively. These products were confirmed as
g-TaON (ICDD: 01-076-3258) and Ta3N5 (ICDD: 04-004-
4564) by their X-ray diffraction (XRD) patterns (Figure 1a).
Scanning electron microscopy (SEM) and transmission elec-
tron microscopy (TEM) images (Figure 1b–e) show that the
products are NPs with size of 20–25 nm, which can be easily
dispersed in EtOH or water by ultrasonic agitation. The size
nicely fits with the calculated results from XRD analysis,
which reveal values of approximately 20.6 nm for TaON and
18.9 nm for Ta3N5. g-TaON can be well identified in high-
resolution TEM images (Figure 1c) by the clear lattice fringes
of (110) and (001), while for Ta3N5 the planes of (200) and
(110) are well observed (Figure 1e).
Recently, we discovered that the controlled release of N
source from urea is significant to control metal nitridation.[7]
As a further controlled version of urea pyrolysis, we present
[*] Dr. Q. S. Gao, Dr. C. Giordano, Prof. M. Antonietti
Department of Colloid Chemistry
Max Planck Institute of Colloids and Interfaces
Research Campus Golm, 14424 Potsdam (Germany)
E-mail: qingsheng.gao@mpikg.mpg.de
The colors of samples give further clear evidence about
their structures, as yellow TaON and red Ta3N5 NPs show
absorption bands around 500 and 600 nm, respectively, in UV/
Vis spectra (Figure S1 in the Supporting Information). This
result proves the narrowing of the band gap compared with
Ta2O5 as a result of nitridation. Moreover, NPs composed of
tunable TaON and Ta3N5 phases are easily obtained (Fig-
ure S2) by switching the RU/Ta value from 1.5 to 3.0, further
indicating the potential for their controlled synthesis.
S. N. Wang, Dr. Y. C. Ma, Prof. Y. Tang
Department of Chemistry and Shanghai Key Laboratory of Molec-
ular Catalysis and Innovative Materials
Fudan University, Shanghai 200433 (P.R. China)
[**] We thank the Max Planck Society, BMBF (035F0353A-E), the
National Science Foundation of China (20873028, 21073041), and
the Major State Basic Research Development Program
(2009CB623506) for financial support.
Several control experiments were carried out to examine
the mechanism underlying the controllable synthesis of TaON
Supporting information for this article is available on the WWW
Angew. Chem. Int. Ed. 2012, 51, 961 –965
ꢀ 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
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