ISSN 0036-0236, Russian Journal of Inorganic Chemistry, 2006, Vol. 51, No. 11, pp. 1750–1754. © Pleiades Publishing, Inc., 2006.
Original Russian Text © N.P. Kuz’mina, A.E. Altsybeev, I.P. Malkerova, A.S. Alikhanyan, I.E. Korsakov, 2006, published in Zhurnal Neorganicheskoi Khimii, 2006, Vol. 51,
No. 11, pp. 1859–1864.
COORDINATION
COMPOUNDS
Zirconium Pivalate: Synthesis and Volatility
a
a
b
b
a
N. P. Kuz’mina , A. E. Altsybeev , I. P. Malkerova , A. S. Alikhanyan , and I. E. Korsakov
a
Moscow State University, Vorob’evy gory, Mosocw, 119992 Russia
b
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences,
Leninskii pr. 31, Moscow, 119991 Russia
Received December 7, 2005
Abstract—Zirconium pivalate is synthesized using an original procedure starting from hydrous zirconium
oxochloride. The volatility of zirconium pivalate is characterized for the first time in the range from 130 to
2
10°C using mass spectrometry: the enthalpies of sublimation and the vapor pressure are determined as func-
tions of temperature. Experiments are carried out to compare the thermal stabilities of zirconium pivalate and
zirconium acetylacetonate. The property of zirconium pivalate to serve as the precursor for MOCVD of zirconia
films is shown.
DOI: 10.1134/S0036023606110118
Volatile zirconium compounds are interesting as zirconium pivalate is also expected to be volatile. To
they may serve as precursors for the chemical vapor our knowledge, there is no data on zirconium pivalate.
deposition (CVD) of ZrO and yttrium-stabilized cubic
2
Our goals in this work were to synthesize Zr(Piv)4,
to characterize its volatility, and to test it as the precur-
ZrO (YSZ), which are used as heat-resistant coatings,
2
oxygen sensors, and buffer layers [1]. Volatile zirco- sor for the CVD technology. In addition, we carried out
nium β-diketonates, in particular, tetrakisacetylaceto- a comparative investigation of the thermal stability and
nate Zr(acac) , are the most frequently used precursors thermohydrolysis resistance of zirconium acetylaceto-
4
for film manufacturing by CVD [2]. Amorphous ZrO2 nate and zirconium pivalate.
films have recently attracted the attention of researchers
because of their use as films with high dielectric con-
EXPERIMENTAL
stants in semiconductor devices [3]. Volatile precur-
sors, which readily decompose to ZrO at low tempera-
The starting chemicals used were zirconium
2
tures or in the presence water vapor, are required for the oxochloride octahydrate (chemically pure grade, Rus-
CVD or atomic layer deposition (ALD) of such films. sia), acetic acid (chemically pure grade, Russia), acetic
In the ALD technology, the deposition is most fre- anhydride (chemically pure grade, Russia), and pivalic
acid (from Merck). The solvents used (m-xylene, tolu-
ene, benzene) were absolutized by distillation from
sodium hydroxide.
quently carried out from anhydrous zirconium halides,
nitrates, or alkoxides [4]. The high moisture sensitivity
of these compounds provides for the formation of
amorphous ZrO films at 250–350°ë but creates some
Zr(MeCOO) synthesis. ZrOCl · 8H O (20 mmol) was
2
4
2
difficulties with manipulation and storage. Zirconium dissolved under reflux in 100 mL of an MeCOOH +
β-diketonates have higher thermal stability and mois- (åÂëé) O mixture (1 : 9). After the mixture was
2
ture resistance; therefore, when they are used for the
deposition of amorphous films, strong oxidizers (O3)
cooled to room temperature, a white crystalline deposit
appeared; then, it was filtered and vacuum dried at
are required in order to keep films from carbon contam- 50°ë: Yield: ~80%.
ination [5]. Search for new precursors for preparing
For ZrC H O anal. calcd. (%): C, 29.36; H, 3.67;
8
12
8
amorphous ZrO films is underway; in our opinion, zir-
2
Zr, 27.8.
conium carboxylates may be used for this purpose.
Found (%): C, 29.52; H, 3.72; Zr, 27.6.
–
1
Zirconium carboxylates (Zr(RCOO) ) have been
4
IR spectrum (ν, cm ): 1540, 1455 (ν
–
) .
COO
described long ago, but relevant data are few [6]. It is
known that zirconium carboxylates decompose to
oxide at temperatures below 500°ë and readily hydro-
lyze in a moist atmosphere. The volatility of zirconium
carboxylates has not been mentioned in the literature.
Based on the volatility data for pivalates (trimethylace-
1H NMR spectrum (δ, ppm): 2.09, 1.96, 1.89, 1.84,
(
ëç3).
Zr(Piv) synthesis was carried out in two solvents
4
(
m-xylene or toluene) using the same procedure. A sus-
pension of zirconium acetate (15 mmol) and pivalic
acid (60 mmol) was refluxed in 100 mL of the solvent
tates) of some other elements (Ag(Piv) [7], Ln(Piv)3,
Ba(Piv) , and Cu(Piv) [8], where HPiv is pivalic acid), until a clear solution was formed. The solvent was dis-
2
2
1
750