J.O. C a´ ceres et al.rChemical Physics Letters 321 (2000) 349–355
353
y
y
the wavelength dependence, even in the CN re
Obviously, the observation of a much shorter TOF
for electrons Ž0.3 ms. and CN ions Ž10.5 ms.
precludes the gas–surface collision as the limiting
y
ratio, clearly indicates the signature of the ACN
resonant vibrational absorption. The 970 and 953
cm peaks of the ACN gas-phase absorption spec-
y1
step of the charge transfer process. In other words,
y
trum are assigned to the Ž5CHCN. and Ž5CH2 .
the observed electrons and CN must be produced in
wagging modes w16x, respectively. The red shift of
a much faster process, as the ACN surface dissocia-
tive attachment, i.e.
y1
y
y
ca. 20 cm
observed in the CN re spectrum
could be due either to the presence of gas-phase
multiphoton absorption leading to ACN dissociative
attachment or to the weakening of the molecular
bond typically associated to the bond formation be-
tween the adsorbate and the metal surface w18x.
ACN
Ž
ad
.
qCu
Ž
surface
.
CNy
Ž
g
.
qA
Ž
ad or g
.
which can take place via the following two modali-
ties.
1. Substrate-mediated absorption. Essentially the
laser radiation heats the electron in the substrate
pumping them out of the Fermi level and subse-
There are several arguments and observations that
run against the gas-phase dissociative attachment
y
y
mechanism, i.e. schematically: ACN†qe
Aq
quently they tunnel to the ACN potential which
leads to AqCN products. This process is
schematically shown in the top panel of Fig. 5 for
a better illustration. Obviously, this mechanism
would show a thermal character without signifi-
cant frequency selectivity.
y
y
CN . These are the following.
1
. Energetics: This process is very endoergic as
D H 8 is given by D H 8sD 8 ŽA–CN.–EAŽCN.
o
o
o
s5.66 eV ŽRef. w19x. y3.83 eV ŽRef. w15x.s
.83 eV. A simple estimate of the average kinetic
energy of the emitted electrons, E , gives E -10
1
2. Adsorbateymediated absorption. In this case,
the vibrational absorption of the ACN molecule is
predominant. This may have several conse-
quences: first an enhanced local heating of the
surface electrons and therefore an enhanced reali-
sation of the first mechanism with the correspond-
ing increase of the electron yield. Secondly, an
e
e
meV which by energy balance requires a mini-
mum ACN internal energy excitation of 1.82 eV
to overcome the dissociative attachment barrier.
This energy barrier would correspond to ca. 16
y1
photons of 933 cm . By contrast the measured
y
y
CN re signal versus laser fluence Žnot shown.
y
showed zero slope.
increase in the CN yield due to a lowering of
2
. Electron yield dependence on laser frequency:
The gas-phase attachment mechanism does not
explain the electron yield dependence on laser
frequency observed in Fig. 3 Žmiddle panel. which
the D E value Žsee bottom panel of Fig. 5.. Now
the value of D E could be lower than D H 8 since:
o
Ži. the ACN is adsorbed on the Cu surface and
presumably the CH C–CN bond is softer. Žii. the
2
was measured at constant laser fluence. Such a
resonant vibrational absorption increases the
molecular electron affinity and so it facilitates the
electron attachment.
‘
resonant’ enhancement of the electron yield nec-
essarily implies a gas–surface or adsorbate–sub-
strate interaction.
In line with above considerations a crucial ques-
In principle, due to the thermal mechanism ex-
pected upon the microsecond timescale of the laser
y
tion to be considered is whether the ACNŽg.qCuŽs.
excitation, the enhancement of the CN ion and
collisions is the limiting step of the observed elec-
electron yield would be caused by additional heating
of the system though resonant absorption of light by
excitation of the ACN vibration. In this view, the
local vibrational mode would only function as an
antenna for the gathering of heat. If we consider that
while free electron formation requires electrons with
energy above 4.6 eV Ži.e. just to surmount the work
y
tron and CN ions. Under the present pressure con-
y7
ditions Ž ps10
Torr. the number of gas–surface
1
1
y2
y1
collisions is about 2=10 collisions cm
Thus, considering a Cu density of 10 atoms cm
s
.
1
4
y2
every surface Cu atom collides with an ACN
molecule within
y
function barrier. and that CN formation only elec-
1
4
1
0
f5000 s collisiony1
trons with energy above 1.8 eV Ži.e. the work func-
tion barrier minus the CN electron affinity. the
ts 2
=10
.
1
1