A. Rodr ´ı guez et al.: Grain size, grain uniformity, and (111) texture enhancement by SPC of F- and C-implanted SiGe films
properties of interest for TFT fabrication. The increase in
the time necessary for full crystallization of the im-
planted films compared to the unimplanted ones can be
considered acceptable in the light of the advantageous
changes in the film microstructure.
ACKNOWLEDGMENT
This work is supported by CICYT Project MAT
99-1214.
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The use of SiGe films combined with the implantation
of C impurities results in the improvement of the film
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J. Mater. Res., Vol. 15, No. 7, Jul 2000
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