J. Tang, K. Azumi / Electrochimica Acta 56 (2011) 1130–1137
1137
flat Al foil. The total capacitance, CT, can be expressed as follows:
(1) The deposition process was controlled by the initial nucle-
ation stage and following deposit-growth stage. The former was
affected by the polarization method and current density, and
the latter was also affected by the current density via formation
of a diffusion layer of Al ions.
1
CT
1
CF
1
CH
=
+
,
where CH is capacitance of the Helmholtz layer. In the present
study, CH (a typical value of CH for most metals is in the range
CH ≈ 10–100 F cm−2) can be neglected for rough estimation of ꢃ
because it is considerably larger than CF (a typical value of CF is ca.
3.6 F cm−2). The value of ꢃ was determined from the ratio of the
capacitance of deposits to that on the flat Al foil as shown in Table 1.
Decrease of ꢃ with decreasing rC confirms that a smoother surface
was obtained at smaller rC, as can be seen in the SEM images shown
in Fig. 8.
(2) Surface morphology and particle size of Al deposits can be con-
trolled by the polarization conditions. For example, particle
size becomes small with increase in current density in the GP
method. Duty ratio and frequency are also adjusted to obtain
dense deposits composed of small Al particles in the current
pulse polarization method. Generally, the current pulse polar-
ization method provides dense deposits with a smooth surface.
(3) The initial nucleation process and following growth process
of Al deposits can be optimized by adjusting the wave form
of the current pulse. For example, adhesion strength of Al
deposits was improved by adding slight anodic dissolution in
the current pulse cycle. The best Al deposits with a smooth
surface and good adhesion were obtained in the conditions of
IC = −16.0 mA cm−2, IA = 1.0 mA cm−2, rC = 0.5, and f = 2 Hz in the
BCP method.
Electrodeposition processes in the three polarization methods
are schematically presented in Fig. 12. In the GP method, Al particles
grow continuously after the initial nucleation process, which occurs
only on limited sites due to low overpotential at low current density
as shown in Fig. 6. Although the density of Al deposits is improved
at relatively high current density, adhesivity of Al deposits remains
poor. In the MCP method, a large current density during tC enables
initial nucleation of Al deposits with high density on the surface.
In the following stage, recovery of Al ion concentration during tOff
weakens the growth of the depletion layer. This provides further
Al deposition on various sites of the surface in the successive plat-
ing cycle, tC, resulting in dense and smooth deposits. In the BCP
method, however, not only density and smoothness but also adhe-
sion strength of Al deposits are improved. These improvements are
probably due to the following factors: (1) good supply of Al ions
to the surface, which enables uniform deposition, (2) refreshing
of the Al deposit surfaces during slight anodic dissolution, which
removes active sites for preferential Al deposition and thus uni-
formizes deposition conditions of the surface to enable deposition
reaction on many sites, resulting in lower overpotential for deposi-
tion reaction, and (3) suppression of side reactions due to lowering
of overpotential such as adsorption of organic compounds, which
may disturb crystal growth and/or formation of bonding between
deposits and pre-deposits. These possibility need to be clarified by
further investigation in the future.
Acknowledgments
This work was supported by the Global COE Program (project no.
B01: Catalysis as the Basis for Innovation in Materials Science) from
the Ministry of Education, Culture, Sports, Science and Technology,
Japan, and also supported in part by the Light Metal Educational
Foundation.
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