Journal of Solid State Chemistry 172 (2003) 138–147
Facile synthesis of interstitial metal nitrides with the filled
b-manganese structure
Timothy J. Prior and Peter D. Battle
ꢀ
Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QR, UK
Received 17 September 2002; received in revised form 5 November 2002; accepted 18 November 2002
Abstract
A new family of nitrides, Ni2ꢁx
0
0
M
x
Mo
3
N (M =Co or Pd; 0pxp1:5), has been prepared pure by nitridation of commercially
2 2
available crystalline metal oxides under reducing conditions (10% H in N ). The simple synthesis employs standard solid-state
techniques and does not require the preparation of reactive precursors. Substitution of Ni by Co or Pd leads to a linear increase of
the unit cell volume with composition. The temperature, composition, and magnetic-field dependence of the molar magnetisation
0
suggest that the introduction of Co, but not Pd, increases the degree of electron localisation in Ni2ꢁx
method has also lead to the formation, in mixtures, of the new phases p-Co
r 2003 Elsevier Science (USA). All rights reserved.
M
x
Mo
3
N. The same synthetic
2 3 2
Mo N and Pd N.
Keywords: Interstitial nitride; Beta-manganese structure; Nitride synthesis; Nitride magnetism
1
. Introduction
ternary nitrides has been attempted by a number of
routes. The majority of known ternary nitrides have
been synthesised from binary nitrides and metals or by
the ammoniation of ternary oxides. Other routes that
have been utilised include ammoniation of metal
sulphides [13] or amorphous mixed metal precursors.
[14] Frequently the preparation of these precursors
requires air-sensitive [14] or complex handling techni-
ques (e.g., freeze-drying [15]) while the purity of
products is often doubtful when ammonia is employed;
binary metal nitrides, [14] alloys, [16] or pure metals [17]
being common impurities. It is notable that there is no
simple, generally applicable method for the formation of
pure ternary metal nitrides.
Metal nitrides have attracted considerable attention
due to a number of interesting properties which they
display, for example hardness, [1,2] electrical [3,4] or
thermal [5] conductivity, superconductivity, [6] magnet-
ism, [7] and catalytic activity. [8,9] However, compared
with the enormous range of ternary and higher metal
oxides which is known, there is a dearth of mixed metal
nitrides. There are a number of reasons for this, not least
the refractory (and hence unreactive) nature of many
binary nitrides and the extreme strength of the bond in
dinitrogen. Elder et al. [10] have provided a means of
predicting which ternary nitrides might be accessible.
This is valuable when the appropriate thermodynamic
data are available, but in general it is impossible to
predict a priori whether a particular nitride will be
stable.
The incorporation of non-metals in interstitial sites
within metals and alloys leads to materials with
increased hardness. This is believed to be due to
strengthening of the metal–metal bonding. [2] One
structure type adopted by a number of interstitial mixed
metal compounds (borides, carbides, nitrides) which has
been receiving interest is the filled b-Mn structure
(sometimes denoted p-phase), M2T3X; which is exem-
plified by Al Mo C. [18,19] M atoms lie on the 8c
The synthesis of binary nitrides is normally accom-
plished by one of two methods: reaction of the metal
with nitrogen, often using a liquid metal flux, [11,12] or
reaction of the metal oxide with ammonia. Synthesis of
2
3
ꢀ
positions of a cubic unit cell with space group symmetry
P4132 forming a single (10,3)-a network. [20] The space
Corresponding author. Fax: +44-1865-272690.
E-mail address: peter.battle@chem.ox.ac.uk (P.D. Battle).
0022-4596/03/$ - see front matter r 2003 Elsevier Science (USA). All rights reserved.
doi:10.1016/S0022-4596(02)00171-8