7402
M. Allemand et al. / Electrochimica Acta 56 (2011) 7397–7403
Table 1
not investigated in details since we are concerned with decreas-
ing the Rf values. Note that in the perspective of H2 purification,
dense Cu–Pd films could be topped with a rougher surface of the
same composition in a single experiment, just by switching from
potential pulse co-electrodeposition to potentiostatic deposition.
This could be a very attractive approach to increase the roughness
factor of the utmost surface layer of an otherwise dense mem-
brane and offers an interesting avenue if surface reactions are the
rate-determining step in the purification process.
Variation of the average roughness factor with toff, ton and Eon. All films were pre-
pared with Eoff = −0.1 V and under solution stirring (500 rpm).
a
b
c
Effect of toff on Rf
Effect of ton on Rf
Effect of Eon on Rf
toff (ms)
Rf
ton (ms)
Rf
Eon (V)
Rf
0
5
50
122 14
12.3 1.5
11.8 1.9
1
5
10
15 11
11.8 1.9
10.4 0.3
−0.3
−0.4
−0.5
−0.6
9
4
7.7 1.5
11.8 1.9
45 35
a
Finally, the last set of results presented in Table 1 concerns
the effect of Eon. Although there is some dispersion in the values
of films prepared at Eon = −0.30 and −0.60 V, the data of Table 1
indicate that the film roughness increases as the applied poten-
noticeable for Eon = −0.60 V. At that potential, electrodeposition
of Pd is accompanied by strong hydrogen evolution. Accordingly,
Eon = −0.50 V offers the best compromise between a smooth mor-
phology and a high deposition rate.
Eon = −0.5 V; ton = 5 ms.
Eon = −0.5 V; toff = 50 ms.
ton = 5 ms; toff = 50 ms.
b
c
films prepared with Eoff = −0.10 V, the Pd content was expected to
vary with toff. However, in sulfuric acid, it is known that Cu can be
underpotentially deposited (UPD) on palladium at potentials lower
than 0.5 V vs. RHE, which corresponds to 0.22 V vs. SCE [53–55].
Thus, UPD of Cu on Pd will occur at Eoff = −0.10 V vs. SCE and Pd
enrichment during pulsed potential deposition is not expected to
be as important as it could be expected from the previous con-
siderations. Indeed, using a 6 mM Cu(NO3)2 + 4 mM Pd(NO3)2 bath,
the composition of the films prepared by pulsed electrodeposi-
tion ([Cu] = 60.7 at.% and [Pd] = 39.3 at.%) was not found to vary
significantly from that of films prepared by potentiostatic elec-
trodeposition in the same bath electrolyte ([Cu] = 57.8 at.% and
[Pd] = 42.2 at.%).
Three deposition parameters were varied to evaluate their effect
on the morphology of the film: Eon, the most negative potential at
which the deposition was performed; ton, the duration of the pulse
at Eon; toff, the duration of the pulse at Eoff. In order to investigate
the influence of these three parameters, the following deposition
conditions were chosen as a reference state: Eon = −0.5 V, ton = 5 ms,
toff = 50 ms. Although SEM is an excellent method to qualitatively
observe the effect of each parameters on the morphology of films, it
is not well suited for quantification purposes. Thus, an evaluation of
the roughness factor by an electrochemical method was performed
to quantitatively evaluate the effect of the different deposition
parameters on the morphology of the film. This method was chosen
since it offers a quick and in situ evaluation of the roughness factor.
Details on the procedure used to determine the roughness factor
are given in the experimental part. Table 1 summarizes the values
of the average roughness factor, Rf, for all tested conditions. Aver-
age values were calculated from at least six different films made in
each deposition conditions.
The first parameter that was examined was toff, as setting it to
toff = 0 is equivalent to potentiostatic deposition. As seen in Table 1,
the Rf values of films made in the pulsed electrodeposition mode
(toff =/ 0 ms) are a factor of about ten lower than films made in the
potentiostatic mode (toff = 0 ms). This confirms the high efficiency
of the pulse electrodeposition mode for producing smoother Cu–Pd
50 ms. From these results, toff = 5 ms could be considered as an opti-
mum value since it insures that smooth films can be prepared in
the quickest manner.
Table 1 also demonstrates that varying ton from 1 ms to 10 ms
does not have any dramatic effect on the film roughness, although
the reproducibility of films prepared with ton = 1 ms is less than that
prepared at longer ton. In the former case, this is thought to arise
as a consequence of electrodeposition occurring mainly during the
early transient state that follows the application of Eon. Obviously, if
ton is too long, films prepared in the pulse deposition mode will not
differ significantly from those prepared in the potentiostatic mode
(which is equivalent to the pulse deposition mode with ton = ∞). The
effect of increasingly longer ton period on the film morphology was
4. Conclusion
From this study, the following conclusions can be drawn:
1. Mixed Cu–Pd thin film can be obtained by potentiostatic co-
electrodeposition on Ti substrate over the entire composition
range simply by changing the composition of the plating bath.
2. In all cases, X-ray diffraction measurements revealed that all
coatings are made of a single phased CuxPd100−x fcc structure.
3. Films prepared in the potentiostatic mode were rough and
porous, with roughness factor exceeding 120. These deposits
could be suitable for electrocatalysis applications.
4. However, it is possible to get denser and more mechanically
resistant deposits, more appropriate for hydrogen purification,
by using pulsed potential co-electrodeposition. In that case, films
smooth and dense films are obtained with roughness factor as
low as ca. 8.
Acknowledgments
The authors would like to thank the Natural Sciences and Engi-
neering Research Council of Canada (NSERC), the NSERC Hydrogen
Canada (H2CAN) Strategic Research Network and the Fonds Québé-
cois de la Recherche sur la Nature et les Technologies (FQRNT) for
supporting this work. Transmission electron microscopy was car-
ried out at the Canadian Centre for Electron Microscopy, a facility
supported by NSERC and McMaster University.
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