A high temperature study of the reaction SiH4+H ? SiH3+H2

Article abstract of DOI:10.1002/bbpc.19981020109

SiH₄+H?SiH₃ + H₂ (R5) was studied behind reflected shock waves at temperatures between 998 K and 1273 K and pressures around 1.5 bar. The thermal decomposition of a few ppm ethyl iodide (C2H5l) was used as a well known H-atom source. The atomic resonance absorption spectroscopy (ARAS) was applied for time resolved and simultaneous measurements of H- and Si-atom concentrations. The presence of an excess of SiH₄ causes a fast consumption of H atoms according to reaction (R5). The signals obtained were kinetically evaluated by computer simulations based on a simplified reaction mechanism. The rate coefficient for reaction (R5) was found to be: k₅=7.8×10¹⁴exp (-2260/T) cm³ mol^-1 s^-1. WILEY-VCH Verlag GmbH, 1998.