Full text of DOI:10.1063/1.99654

Selective growth condition in disilane gas source silicon molecular beam epitaxy
Hiroyuki Hirayama, Toru Tatsumi, and Naoaki Aizaki
Citation: Applied Physics Letters 52, 2242 (1988); doi: 10.1063/1.99654
View online: http://dx.doi.org/10.1063/1.99654
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/52/26?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
30.88.90.140 On: Thu, 18 Dec 2014 22:28:14
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
30.88.90.140 On: Thu, 18 Dec 2014 22:28:14
1