BORON DOPING EFFECT ON SILICON FILM DEPOSITION IN THE Si2H6-B2H6-He GAS SYSTEM.

Article abstract of DOI:10.1149/1.2109002

Heavily boron-doped silicon films are deposited in the temperature range 520 degree -665 degree C in the Si//2H//6-B//2H//6-He gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared wit

Full text of DOI:10.1149/1.2109002

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Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).