
Journal of the Electrochemical Society p. 1427 - 1433 (1984)
Update date:2022-08-17
Topics:
Broadbent
Ramiller
An examination is made of the kinetics of low pressure chemical vapor deposition of tungsten by the hydrogen and silicon reduction of WF//6 within a pressure range of 0. 1-5 torr and a temperature range of 250 degree -500 degree C. The rate-limiting mechanism for the hydrogen reduction system was determined to be the dissociation of H//2 adsorbed on the surface, with an activation energy of 0. 71 ev. A self-limiting deposit results from the WF//6-Si reaction, the thickness and structure of which are dependent upon the initial native oxide characteristics. Deposition occurs selectively on materials that react directly with WF//6 or yield monatomic hydrogen. In the presence of hydrogen, the degree of selectivity is a function of temperature, substrate material, and surface cleanliness.
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