KINETICS AND MECHANISM OF SELECTIVE TUNGSTEN DEPOSITION BY LPCVD.

Article abstract of DOI:10.1149/1.2113664

Tungsten films have been deposited selectively on oxide-patterned silicon wafers by the H//2 reduction of WF//6 in WF//6-H//2 and WF//6-H//2-Ar gas flow systems. The deposition rate of films was investigated as a function of reactant partial pressures. The reaction orders with respect to WF//6 and H//2 are zero and one-half, respectively Under given experimental conditions, the growth rate of the selectively deposited W films was reduced by 32% when the deposition area increased by a factor of 10-100. This decrease in growth rate can be attributed to the effect of HF on the surface reaction. The selective nature of the process deteriorates with increasing deposition rate, WF//6 partial pressure, H//2 partial pressure, or deposition time.

Full text of DOI:10.1149/1.2113664

Downloaded on 2015-03-18 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-18 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-18 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-18 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-18 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-18 to IP 152.14.136.77 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).