Full text of DOI:10.1063/1.109058

Nanocrystalline Ge in SiO2 by annealing of Ge x Si1−x O2 in hydrogen
W. S. Liu, J. S. Chen, M.A. Nicolet, V. ArbetEngels, and K. L. Wang
Citation: Applied Physics Letters 62, 3321 (1993); doi: 10.1063/1.109058
View online: http://dx.doi.org/10.1063/1.109058
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/62/25?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
145.116.150.241 On: Thu, 04 Dec 2014 13:47:02

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
145.116.150.241 On: Thu, 04 Dec 2014 13:47:02

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
145.116.150.241 On: Thu, 04 Dec 2014 13:47:02