180
K. Muraleedharan et al.
508 K [28]. While the decomposition of pure ammonium
perchlorate is immeasurably slow below 473 K, in the
presence of CuO it already begins at 453 K after an
induction period of about 10–15 h. TiO2 was found to be
practically inactive in the decomposition of both ortho-
rhombic and cubic ammonium perchlorate.
of KIO4 so that the oxides lack electron acceptor property
with respect to KIO4. Thus the electrons may flow from the
oxide to KIO4, which affects the electron transfer reaction
adversely. The possibility of chemisorptions of the
decomposition product, O2, on the semiconductor surface
can also lead to an inhibition of the decomposition process.
In this study we have examined the effect of mixing
KIO4 with metal oxides such as CuO and MnO2 (p-type
semiconductors) and TiO2 (n-type semiconductor). In both
CuO and MnO2, the current carriers are holes and have a
narrow band gap [16, 17]. On the other hand TiO2 is an
electronic semi-conductor in which the current carriers are
free electrons [18]. None of these oxides influenced the
decomposition of KIO4 (at 570 K) up to a concentration of
2 wt%, above which these oxides desensitized the
decomposition rather than catalyzing it. The extent of
desensitization has gone up to ca. 15% when the oxide
concentration is 10 wt%. The rate law of the decomposi-
tion remained unaffected by the additives, which implies
that Prout–Tompkins model is still valid.
Conclusions
The behaviour of mechanical mixtures of KIO4 with n- and
p-type semiconducting oxides suggests that the electron
work functions of these oxides might be smaller than that
of KIO4 so that they lack electron acceptor property with
respect to KIO4 and thus fail to favour electron transfer
process. More studies are, however, necessary to draw any
correlation between electron work functions of the oxides
and their effect on decomposition rate.
The influence of a heterophase additive in reactions
involving charge transfer may be connected with the
electrical properties of the additives. When a metal is
placed in contact with a semiconductor a flow of electrons
takes place across the boundary as long as there exists a
difference between the free energies of the electrons in the
two substances. In a similar fashion, when a solid (e.g.
KIO4) is placed in contact with a semiconducting additive
(e.g. CuO) a contact potential difference arises at the
interface between the solid and the additive. This contact
potential depends on the work functions of electron from
the solid and the additive, and may cause either an increase
or decrease in the number of electrons in the contact layer.
Semiconducting oxides for which the electron work func-
tions are greater than that of the solid accept electrons from
the contact layer and thus catalyse electron-transfer process
occurring in the solid, where as additives with smaller
electron work functions decelerate the electron transfer
process. For instance, the thermolysis of KMnO4, where
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In the thermolysis of KIO4 we observed that both p- and
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