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Digallium sulfide

Base Information Edit
  • Chemical Name:Digallium sulfide
  • CAS No.:12259-25-5
  • Molecular Formula:Ga2S
  • Molecular Weight:171.512
  • Hs Code.:
  • Mol file:12259-25-5.mol
Digallium sulfide

Synonyms:Digallium sulfide;gallanylsulfanylgallane;12259-25-5

Suppliers and Price of Digallium sulfide
Supply Marketing:Edit
Business phase:
The product has achieved commercial mass production*data from LookChem market partment
Manufacturers and distributors:
  • Manufacture/Brand
  • Chemicals and raw materials
  • Packaging
  • price
Total 4 raw suppliers
Chemical Property of Digallium sulfide Edit
Chemical Property:
  • Boiling Point:°Cat760mmHg 
  • Flash Point:°C 
  • PSA:75.90000 
  • Density:g/cm3 
  • LogP:-1.69280 
  • Hydrogen Bond Donor Count:0
  • Hydrogen Bond Acceptor Count:1
  • Rotatable Bond Count:0
  • Exact Mass:175.85365
  • Heavy Atom Count:3
  • Complexity:2.8
Purity/Quality:

99% *data from raw suppliers

Safty Information:
  • Pictogram(s):  
  • Hazard Codes:
  • Statements: 34 
  • Safety Statements: 22-26-27-36/37/39-45 
MSDS Files:

SDS file from LookChem

Useful:
  • Canonical SMILES:S([GaH2])[GaH2]
Technology Process of Digallium sulfide

There total 15 articles about Digallium sulfide which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:
Guidance literature:
In neat (no solvent); vaporization in a Knudsen effusion cell in the range 1115-1246 K (vapour pressure from 0.25 to 10.0 Pa);
DOI:10.1016/0022-5088(89)90432-3
Guidance literature:
In neat (no solvent); thermal decomposition gives no good yields;;
DOI:10.1007/BF02716067
Guidance literature:
In neat (no solvent); under high vacuum at 700 - 720 °C; Ga2S3 added for better wetting of GaS by Ga;;
DOI:10.1007/BF02716067
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