108-65-6

Usage

Uses

Used in Coatings and Inks Industry:
1-Methoxy-2-propyl acetate is used as a high-grade industrial solvent for its strong solubility for polar and non-polar substances. It is particularly suitable for solvents of various polymers in high-grade coatings and inks, including aminomethyl ester, vinyl, polyester, cellulose acetate, alkyd resin, acrylic resin, epoxy resin, and nitrocellulose.
Used in Paints, Inks, Lacquers, Varnishes, Cleaners, and Coatings:
1-Methoxy-2-propyl acetate is used as a solvent in the production of paints, inks, lacquers, varnishes, cleaners, and coatings due to its ability to dissolve numerous natural and synthetic resins, waxes, fats, and oils.
Used in Degreasing Circuit Boards:
1-Methoxy-2-propyl acetate is used as a solvent for degreasing circuit boards, taking advantage of its solvent power and compatibility with various organic materials.
Used in Food Contact Applications:
1-Methoxy-2-propyl acetate is used in food contact applications, indicating its low toxicity and suitability for use in the food industry.
Used in Photoresist Formulations in the Semiconductor Industry:
1-Methoxy-2-propyl acetate is used as a solvent in photoresist formulations, playing a crucial role in the semiconductor industry.
Used in the Production of LCD:
1-Methoxy-2-propyl acetate is used as a cleaning agent in the production of LCDs, highlighting its versatility and effectiveness in various industrial applications.

Flammability and Explosibility

Flammable

Safety Profile

Moderately toxic by intraperitoneal route. Slightly toxic by ingestion and skin contact. When heated to decomposition it emits acrid smoke and irritating vapors.

InChI:InChI=1/C5H10O3.C3H6/c1-5(6)8-4-3-7-2;1-3-2/h3-4H2,1-2H3;3H,1H2,2H3

Synthetic route

2-(1-methoxycarbonyl-1-methylethylazo)-2-methylpropionic acid methyl ester (2589-57-3) → propylene glycol methyl ether acetate (108-65-6)

Conditions	Yield
In methanol; hexane; butanone	60%
In methanol; hexane; water; butanone	60%

1-methoxy-2-propanol (107-98-2) + acetic anhydride (108-24-7) → propylene glycol methyl ether acetate (108-65-6)

sodium methylate (124-41-4) + acetic anhydride (108-24-7) + methyloxirane (75-56-9, 16033-71-9) → propylene glycol methyl ether acetate (108-65-6)

Conditions	Yield
(i), (ii) /BRN= 385737/; Multistep reaction;

poly(methacrylic acid) (79-41-4) + 1-dodecylthiol (112-55-0) → propylene glycol methyl ether acetate (108-65-6)

1-methoxy-2-propanol (107-98-2) + acetic acid (64-19-7) → propylene glycol methyl ether acetate (108-65-6)

Conditions	Yield
at 98℃; under 130.002 Torr; Concentration;

methyl p-toluene sulfonate (80-48-8) → propylene glycol methyl ether acetate (108-65-6)

Conditions	Yield
With dimethyl sulfate

diethyl sulfate (64-67-5) → propylene glycol methyl ether acetate (108-65-6)

Conditions	Yield
With dimethyl sulfate

1-methoxy-2-propanol (107-98-2) + sec-Butyl acetate (105-46-4) → propylene glycol methyl ether acetate (108-65-6)

Conditions	Yield
With sodium methylate at 135℃; for 5h;

propylene glycol methyl ether acetate (108-65-6) → methyl (Z)-prop-1-enyl ether (4188-68-5) + (E)-1-Methoxy-1-propen (4188-69-6) + methylallylether (627-40-7)

Conditions	Yield
at 500℃;

propylene glycol methyl ether acetate (108-65-6) → methyl (Z)-prop-1-enyl ether (4188-68-5) + methylallylether (627-40-7)

Conditions	Yield
at 500℃;

propylene glycol methyl ether acetate (108-65-6) → (E)-1-Methoxy-1-propen (4188-69-6) + methylallylether (627-40-7)

Conditions	Yield
at 500℃;

propylene glycol methyl ether acetate (108-65-6) → (S)-1-Methoxy-propan-2-ol (26550-55-0) + (R)-1-methoxy-2-propanol (4984-22-9)

Conditions	Yield
With sodium phosphate buffer; esterase B from Candida antarctica In water at 37℃; for 1h; pH=7.3; Product distribution; Further Variations:; Reagents;

2-methyl-2-propenoic acid 2-hydroxyethyl ester (868-77-9) + poly(methacrylic acid) (79-41-4) + (S)-Ethyl lactate (687-47-8) + propylene glycol methyl ether acetate (108-65-6) + benzyl methacrylate (2495-37-6) → Reaxys ID: 15740739

Conditions	Yield
With 2,2'-azobis-(2,4-dimethylvaleronitrile) at 65℃; for 10h;

tris[2-(methoxymethoxy)ethyl]amine (211919-60-7) + triphenylsulfonium nonafluoro-n-butanesulfonate + Reaxys ID: 11355843 + propylene glycol methyl ether acetate (108-65-6) + cyclohexanone (108-94-1) → resist composition

tris[2-(methoxymethoxy)ethyl]amine (211919-60-7) + triphenylsulfonium nonafluoro-n-butanesulfonate + Reaxys ID: 11370510 + propylene glycol methyl ether acetate (108-65-6) → resist solution

tris[2-(methoxymethoxy)ethyl]amine (211919-60-7) + triphenylsulfonium nonafluoro-n-butanesulfonate + Reaxys ID: 15741265 + propylene glycol methyl ether acetate (108-65-6) → Reaxys ID: 15741370

Reaxys ID: 11391132 + propylene glycol methyl ether acetate (108-65-6) → polymer solution

Reaxys ID: 15741359 + propylene glycol methyl ether acetate (108-65-6) → Reaxys ID: 15741372

propylene glycol methyl ether acetate (108-65-6) + terminal carboxylated poly(N,N-dimethylacrylamide) + 2,3-Epoxypropyl methacrylate (106-91-2) → monoterminally methacryloyl-type poly(N,N-dimethylacrylamide)

Conditions	Yield
With tetrabutylammomium bromide; 4-methoxy-phenol at 90℃; for 12h;

propylene glycol methyl ether acetate (108-65-6) + monoterminally methacryloyl-substituted poly(N-vinylpyrrolidone) + monoterminally methacryloyl-type polymethyl methacrylate + methacrylic acid methyl ester (80-62-6) → poly(methyl methacrylate-g-N-vinylpyrrolidone-g-methyl methacrylate)

Conditions	Yield
In toluene at 80℃; for 4h;

propylene glycol methyl ether acetate (108-65-6) + monoterminally methacryloyl-type poly(N,N-dimethylacrylamide) + monoterminally methacryloyl-type polymethyl methacrylate + methacrylic acid methyl ester (80-62-6) → poly(methyl methacrylate-g-N,N-dimethylacryloyl amide-g-methyl methacrylate)

Conditions	Yield
With 2,2'-azobis-(2,4-dimethylvaleronitrile) In toluene at 80℃; for 6h;

N,N-Dimethylacrylamide (2680-03-7) + propylene glycol methyl ether acetate (108-65-6) → terminal carboxylated poly(N,N-dimethylacrylamide)

Conditions	Yield
With 2,2'-azobis-(2,4-dimethylvaleronitrile); 3-mercaptopropionic acid at 80℃; for 6h;

N,N-Dimethylacrylamide (2680-03-7) + propylene glycol methyl ether acetate (108-65-6) + monoterminally methacryloyl-type polymethyl methacrylate → poly(N,N-dimethylacrylamide-g-methyl methacrylate)

Conditions	Yield
With 2,2'-azobis-(2,4-dimethylvaleronitrile) In toluene at 80℃; for 6h;

propylene glycol methyl ether acetate (108-65-6) + monoterminally methacryloyl-type polymethyl methacrylate + monoterminally methacryloyl-type poly(2-ethyloxazoline) → poly(N,N-dimethylacrylamide-g-methyl methacrylate)

Conditions	Yield
With 2,2'-azobis-(2,4-dimethylvaleronitrile) In toluene at 75℃; for 6h;

1-methoxy-2-propanol (107-98-2) + poly(methacrylic acid) (79-41-4) + propylene glycol methyl ether acetate (108-65-6) + 2,3-Epoxypropyl methacrylate (106-91-2) + methacrylic acid methyl ester (80-62-6) + 2-methyl-butyl acrylate (97-88-1) → AP-1

Conditions	Yield
Stage #1: 1-methoxy-2-propanol; poly(methacrylic acid); methacrylic acid methyl ester; 2-methyl-butyl acrylate With 2,2'-azobis(isobutyronitrile); 2-hydroxyethanethiol at 90℃; for 4h; Stage #2: propylene glycol methyl ether acetate at 100℃; for 1.5h; Stage #3: 2,3-Epoxypropyl methacrylate With tetrabutylammomium bromide; 4-methoxy-phenol at 80℃; for 8h;

Triethoxysilane (998-30-1) + propylene glycol methyl ether acetate (108-65-6) + triethoxyphenylsilane (780-69-8) + ammonium hydroxide → siloxane

Conditions	Yield
In water

1-ethylcyclopentyl methacrylate + 3-hydroxy-1-adamantyl methacrylate (115372-36-6) + ethyl 2-hydroxypropionate (97-64-3, 2676-33-7) + diphenylether (101-84-8) + propylene glycol methyl ether acetate (108-65-6) + 3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxypropan-2-yl)cyclohexyl methacrylate (781637-36-3) + 4-diacetoxyiodobiphenyl + alpha-(gamma-butyrolactone) methacrylate + 2-isopropyl-2-adamantyl methacrylate (297156-50-4) + gamma-butyrolactone methacrylate + potassium nonaflate (29420-49-3) → Biphenyl-4-yl(4-phenoxyphenyl)iodonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate

Conditions	Yield
With toluene-4-sulfonic acid In methanol; dichloromethane; water; acetonitrile

...Expand

Upstream product

• 107-98-2 1-methoxy-2-propanol 
• 105-46-4 sec-Butyl acetate 
• 64-67-5 diethyl sulfate 
• 80-48-8 methyl p-toluene sulfonate 
• 2589-57-3 2-(1-methoxycarbonyl-1-methylethylazo)-2-methylpropionic acid methyl ester 
• 79-41-4 poly(methacrylic acid) 
• 112-55-0 1-dodecylthiol 
• 124-41-4 sodium methylate 
• 108-24-7 acetic anhydride 
• 75-56-9 methyloxirane 
• 64-19-7 acetic acid 

Downstream Products

• 4188-68-5 methyl (Z)-prop-1-enyl ether 
• 4188-69-6 (E)-1-Methoxy-1-propen 
• 627-40-7 methylallylether 
• 26550-55-0 (S)-1-Methoxy-propan-2-ol 
• 4984-22-9 (R)-1-methoxy-2-propanol 

Relevant academic research and scientific papers

A process for the preparation of acetate

The invention relates to an acetate preparation method. The method comprises the following steps: carrying out a contact reaction of sec-butyl acetate and alcohol in the presence of an ester exchange catalyst under an ester exchange reaction condition, adding products obtained after the contact reaction into a separation tower, controlling the tower top temperature to separate unreacted sec-butyl acetate and sec-butyl alcohol generated after the reaction from the tower top, and carrying out normal-pressure or reduced-pressure flash evaporation to separate acetate generated after the reaction from a tower bottom fraction, wherein the alcohol is alcohol having a general formula of R(OH)n and/or polyol alkylether having at least one hydroxy group, R is a C5-C20 n-valence alkyl group, a C5-C20 n-valence alkenyl group, a C5-C12 n-valence cycloalkyl group or a C7-C20 n-valence aryl group, and n is an integer in a range of 1-5. The method has the advantages of high conversion rate of the alcohol as a reaction raw material, and high acetate selectivity.

Pattern-forming method, and radiation-sensitive composition

A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. [in-line-formulae]-A? X+??(1)[/in-line-formulae]

Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base

A photoresist composition containing a polymer having a structural unit including an acid-labile group, and a compound represented by the formula (1). In the formula (1), R1 represents a hydrogen atom or a monovalent acid-labile group. R2 represents an alicyclic hydrocarbon group having 3 to 20 carbon atoms and a valency of (m+1). m is an integer of 2 to 5. R3 and R4 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. n is an integer of 0 to 5. At least two of a plurality of R1s optionally taken together represent a ring structure, together with a plurality of oxygen atoms bonding to R1 and the carbon atom(s) constituting R2 and bonding to these oxygen atoms. M+ represents a monovalent radiation-degradable onium cation.

Pattern forming method, chemical amplification resist composition and resist film

Provided is a negative type pattern forming method that satisfies high sensitivity, high resolution, good roughness and good dry etching resistance at the same time, and further, has a good development time dependency, the method including (i) forming a film by a chemical amplification resist composition containing (A) a fullerene derivative having an acid-decomposable group, (B) a compound generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) exposing the film, and (iii) developing the exposed film by using an organic solvent-containing developer.

Actinic-ray-sensitive or radiation-sensitive resin composition, and resist film using the same, pattern forming method, electronic device manufacturing method, and electronic device, each using the same

Provided are an actinic-ray-sensitive or a radiation-sensitive resin composition with greater residual film ratio and capable of suppressing pattern collapse and an occurrence of bridge defects after development, and a resist film, a pattern forming method, an electronic device manufacturing method, and an electronic device, each using the same. An actinic-ray-sensitive or radiation-sensitive resin composition includes a resin (P) having a repeating unit (a) represented by following General Formula (I), a compound (B) represented by any of following General Formulae (B-1) to (B-3), and a solvent, in General Formula (I), R0 represents a hydrogen atom or a methyl group, and R1, R2 and R3 each independently represent a straight chain or branched alkyl group.

QUATERNARY AMMONIUM SALT COMPOUND

The present invention provides a novel quaternary ammonium salt compound that is excellent in atomization of a pigment dispersion and storage stability, a dispersant containing the quaternary ammonium salt compound, a use of the quaternary ammonium salt compound, and a process for producing the quaternary ammonium salt compound. The present invention relates to [1] a quaternary ammonium salt compound represented by the general formula (I); [2] a dispersant containing the compound of the above [1]; [3] a use of the compound of the above [1] for dispersing a pigment; and [4] a process for producing a quaternary ammonium salt compound represented by the general formula (I), including a step of reacting a halogenated alkyl ester compound represented by the general formula (II) with a polyamine compound represented by the general formula (III).

METHOD FOR PREPARING GLYCOL ESTER USING REACTIVE DISTILLATION

Provided is a method for preparing a glycol ester capable of increasing a conversion rate of a glycol ether under low temperature and pressure conditions, minimizing a recycled amounts of unreacted materials using a reactive distillation column, and decreasing a production amount of impurities, in preparing the glycol ester using the glycol ether and a carboxylic acid. In addition, provided is a method for preparing a glycol ester for electronics capable of decreasing a loss of the glycol ester toward an upper portion of a reactive distillation column by injecting an excess amount of a carboxylic acid as compared to a molar number of a glycol ether and easily separating the glycol ester and the carboxylic acid from each other under a pressurized condition, and simplifying a subsequent separation column process without a separate azeotropic distillation apparatus.

RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, POLYMER, AND METHOD FOR PRODUCING COMPOUND

A radiation-sensitive resin composition contains: a polymer having a structural unit that includes a group represented by formula (1); a radiation-sensitive acid generator; and an organic solvent. In the formula (1), RP represents a hydrogen atom or a monovalent organic group, and * denotes a binding site to a rest of the structural unit other than the group represented by the formula (1). It is preferred that RP in the formula (1) represents a monovalent organic group, and the monovalent organic group is an acid-nonlabile group. It is also preferred that RP in the formula (1) represents a monovalent organic group, and the monovalent organic group is an acid-labile group.

RADIATION-SENSITIVE COLORED COMPOSITION, COLORED CURED FILM, COLOR FILTER AND METHOD OF PRODUCING THE SAME, SOLID-STATE IMAGING DEVICE, LIQUID CRYSTAL DISPLAY APPARATUS, AND METHOD OF PRODUCING DYE

The object of the present invention is to provide a radiation-sensitive colored composition which can supress the generation of the contamination of the device. A radiation-sensitive colored composition including: (A) a dye containing of from 10 ppm to 1000 ppm of a halogen ion; (B) a polymerizable compound; and (C) a solvent.

SILOXANE-BASED RESIN COMPOSITION

The present invention is a siloxane-based resin composition including a siloxane-based resin and an imidosilane compound having a specific structure. Moreover, the present invention is a siloxane-based resin composition including a siloxane-based resin which is a reactive product to be obtained by hydrolyzing an alkoxysilane compound and an imidosilane compound having a specific structure and then making the resulting hydrolysate undergo a condensation reaction. According to the present invention, it is possible to form a cured film excellent in adhesion.