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14868-53-2

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14868-53-2 Usage

General Description

Pentasilane is a chemical compound with the formula Si5H12, consisting of five silicon atoms and twelve hydrogen atoms. It is a colorless, flammable gas with a strong, unpleasant odor. Pentasilane is primarily used as a precursor in the production of silicon nitride and silicon carbide, which are important industrial ceramics. It has also been studied for its potential use in semiconductor materials and as a high-energy density fuel. Pentasilane is highly reactive and requires careful handling due to its flammability and potential for spontaneous combustion in air. Overall, it is an important and versatile compound with various applications in the fields of materials science and energy.

Check Digit Verification of cas no

The CAS Registry Mumber 14868-53-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,4,8,6 and 8 respectively; the second part has 2 digits, 5 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 14868-53:
(7*1)+(6*4)+(5*8)+(4*6)+(3*8)+(2*5)+(1*3)=132
132 % 10 = 2
So 14868-53-2 is a valid CAS Registry Number.

14868-53-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name bis(disilanyl)silane

1.2 Other means of identification

Product number -
Other names n-pentasilane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:14868-53-2 SDS

14868-53-2Synthetic route

SiF2

SiF2

hydrogen fluoride
7664-39-3

hydrogen fluoride

A

n-pentasilane
14868-53-2

n-pentasilane

B

isopentasilane
14868-54-3

isopentasilane

C

3-silylpentasilane
52988-75-7

3-silylpentasilane

D

(SiH3)2Si4H8
14868-55-4

(SiH3)2Si4H8

E

hexasilane
14693-61-9

hexasilane

Conditions
ConditionsYield
In hydrogen fluoride
disilane

disilane

A

trisilane
7783-26-8

trisilane

B

n-tetrasilane
7783-29-1

n-tetrasilane

C

n-pentasilane
14868-53-2

n-pentasilane

D

hydrogen
1333-74-0

hydrogen

E

monosilane
7440-21-3

monosilane

Conditions
ConditionsYield
In neat (no solvent) Kinetics; Irradiation (UV/VIS); photolyses at 0.7-4 Torr and 147 nm;
disilane

disilane

A

trisilane
7783-26-8

trisilane

B

disilene

disilene

C

disilyne

disilyne

D

n-tetrasilane
7783-29-1

n-tetrasilane

E

n-pentasilane
14868-53-2

n-pentasilane

Conditions
ConditionsYield
In gas other products are: Si3H6, Si4H8, Si5H10 (1-silene isomers), 30 Torr, 298-740 K, at higher temperatures(740 K) probably cyclo-Si4 and cyclo-Si5derivatives form; detected by mass spectra;
magnesium silicide

magnesium silicide

A

trisilane
7783-26-8

trisilane

B

disilane

disilane

C

n-tetrasilane
7783-29-1

n-tetrasilane

D

n-pentasilane
14868-53-2

n-pentasilane

E

monosilane
7440-21-3

monosilane

Conditions
ConditionsYield
With phosphoric acid further products;
With hydrogenchloride byproducts: H2, Si6H14; amount of different silanes decraeses with increasing its molecular weight;
With HCl byproducts: H2, Si6H14; amount of different silanes decraeses with increasing its molecular weight;
disilane

disilane

hydrogen

hydrogen

A

trisilane
7783-26-8

trisilane

B

n-tetrasilane
7783-29-1

n-tetrasilane

C

n-pentasilane
14868-53-2

n-pentasilane

D

monosilane
7440-21-3

monosilane

Conditions
ConditionsYield
In neat (no solvent) Si2H6 deposited on si substrate, cooled to 10 K, exposed to H atoms at 27 K;
n-pentasilane
14868-53-2

n-pentasilane

A

4-silylheptasilane
75280-00-1

4-silylheptasilane

B

3-silylhexasilane
74850-83-2

3-silylhexasilane

Conditions
ConditionsYield
In further solvent(s) Irradiation (UV/VIS); under He, 2.5 h, in 2,3-dimethylbutane, room temp.;A 13%
B 20%
n-pentasilane
14868-53-2

n-pentasilane

A

trisilane
7783-26-8

trisilane

B

disilane

disilane

C

n-tetrasilane
7783-29-1

n-tetrasilane

D

4-silylheptasilane
75280-00-1

4-silylheptasilane

E

3-silylhexasilane
74850-83-2

3-silylhexasilane

Conditions
ConditionsYield
In further solvent(s) Irradiation (UV/VIS); 9 h, room temp., in 2,3-dimethylbutane;A 12.3%
B 8.9%
C 2.2%
D 2.7%
E 4.4%
potassium silanide

potassium silanide

n-pentasilane
14868-53-2

n-pentasilane

A

2-potassium trisilanyl

2-potassium trisilanyl

B

potassium hydride

potassium hydride

C

2-potassium iso-tetrasilanyl

2-potassium iso-tetrasilanyl

Conditions
ConditionsYield
In 1,2-dimethoxyethane (N2), to the soln. of KSiH3 in DME added silane (ratio 1:1 and 1:2) at room temp. dropwise under stirring, reaction time 1 and 72 h; gas chromy.;

14868-53-2Relevant articles and documents

Synthesis of polysilanes by tunneling reactions of H atoms with solid Si2H6 at 10K

Sogoshi, Norihito,Sato, Shoji,Takashima, Hideaki,Sato, Tetsuya,Hiraoka, Kenzo

, p. 986 - 987 (2012/09/22)

Tunneling reactions of H atoms with solid Si2H6 at 10K were investigated. The in situ and real-time reactions H + Si 2H6 to form silane and polysilanes were monitored using FT-IR. Quantitative analysis of gaseou

The 147-nm Photolysis of Disilane

Perkins, G. G. A.,Lampe, F. W.

, p. 3764 - 3769 (2007/10/02)

The photodecomposition of Si2H6 at 147 nm results in the formation of H2, SiH4, Si3H8, Si4H10, Si5H12, and a solid film of amorphous silicon hydride (a-Si:H).Three primary processes are proposed to accoount for the results, namely, (a) Si2H6 + hν -> SiH2 + SiH3 + H (φa=0.61); (b) Si2H6 + hν -> SiH3SiH + 2H (φb=0.18); (c) Si2H6 + hν -> Si2H5 + H (φc=0.21).The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si2H6 are Φ(-Si2H6)=4.3+/-0.2, Φ(SiH4)=1.2+/-0.4, Φ(Si3H8)=0.91+/-0.08, Φ(Si4H10)=0.62+/-0.03, Φ(Si,wall)=2.2.Quantum yields for H2 formation were not measured.A mechanism is proposed which is shown to be in accord with the experimental facts.

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