14868-53-2

Usage

Uses

Used in Ceramics Production:
Pentasilane is used as a precursor in the production of silicon nitride and silicon carbide, which are crucial industrial ceramics. These ceramics are valued for their high strength, hardness, and resistance to thermal shock, making them ideal for applications in electronics, aerospace, and automotive industries.
Used in Semiconductor Materials:
Pentasilane has been studied for its potential use in semiconductor materials due to its silicon content. Semiconductors are essential in the electronics industry for the production of devices such as transistors, diodes, and integrated circuits.
Used in High-Energy Density Fuels:
Pentasilane is also being explored as a high-energy density fuel. Its high energy content makes it a promising candidate for applications in advanced propulsion systems and energy storage solutions, particularly in aerospace and defense sectors.
Used in Materials Science Research:
Pentasilane's unique properties and reactivity make it an important compound for research in materials science. It can contribute to the development of new materials with improved properties, such as enhanced thermal stability, electrical conductivity, or mechanical strength.

Synthetic route

SiF2 + hydrogen fluoride (7664-39-3) → n-pentasilane (14868-53-2) + isopentasilane (14868-54-3) + 3-silylpentasilane (52988-75-7) + (SiH3)2Si4H8 (14868-55-4) + hexasilane (14693-61-9)

Conditions	Yield
In hydrogen fluoride

disilane → trisilane (7783-26-8) + n-tetrasilane (7783-29-1) + n-pentasilane (14868-53-2) + hydrogen (1333-74-0) + monosilane (7440-21-3)

Conditions	Yield
In neat (no solvent) Kinetics; Irradiation (UV/VIS); photolyses at 0.7-4 Torr and 147 nm;

disilane → trisilane (7783-26-8) + disilene + disilyne + n-tetrasilane (7783-29-1) + n-pentasilane (14868-53-2)

Conditions	Yield
In gas other products are: Si3H6, Si4H8, Si5H10 (1-silene isomers), 30 Torr, 298-740 K, at higher temperatures(740 K) probably cyclo-Si4 and cyclo-Si5derivatives form; detected by mass spectra;

magnesium silicide → trisilane (7783-26-8) + disilane + n-tetrasilane (7783-29-1) + n-pentasilane (14868-53-2) + monosilane (7440-21-3)

Conditions	Yield
With phosphoric acid further products;
With hydrogenchloride byproducts: H2, Si6H14; amount of different silanes decraeses with increasing its molecular weight;
With HCl byproducts: H2, Si6H14; amount of different silanes decraeses with increasing its molecular weight;

disilane + hydrogen → trisilane (7783-26-8) + n-tetrasilane (7783-29-1) + n-pentasilane (14868-53-2) + monosilane (7440-21-3)

Conditions	Yield
In neat (no solvent) Si2H6 deposited on si substrate, cooled to 10 K, exposed to H atoms at 27 K;

n-pentasilane (14868-53-2) → 4-silylheptasilane (75280-00-1) + 3-silylhexasilane (74850-83-2)

Conditions	Yield
In further solvent(s) Irradiation (UV/VIS); under He, 2.5 h, in 2,3-dimethylbutane, room temp.;	A 13% B 20%

n-pentasilane (14868-53-2) → trisilane (7783-26-8) + disilane + n-tetrasilane (7783-29-1) + 4-silylheptasilane (75280-00-1) + 3-silylhexasilane (74850-83-2)

Conditions	Yield
In further solvent(s) Irradiation (UV/VIS); 9 h, room temp., in 2,3-dimethylbutane;	A 12.3% B 8.9% C 2.2% D 2.7% E 4.4%

potassium silanide + n-pentasilane (14868-53-2) → 2-potassium trisilanyl + potassium hydride + 2-potassium iso-tetrasilanyl

Conditions	Yield
In 1,2-dimethoxyethane (N2), to the soln. of KSiH3 in DME added silane (ratio 1:1 and 1:2) at room temp. dropwise under stirring, reaction time 1 and 72 h; gas chromy.;

Upstream product

• 1590-87-0 disilane 
• 22831-39-6 magnesium silicide 
• 7664-39-3 hydrogen fluoride 

Downstream Products

• 7783-26-8 trisilane 
• 1590-87-0 disilane 
• 7783-29-1 n-tetrasilane 
• 75280-00-1 4-silylheptasilane 
• 74850-83-2 3-silylhexasilane 

Relevant academic research and scientific papers

Synthesis of polysilanes by tunneling reactions of H atoms with solid Si2H6 at 10K

Tunneling reactions of H atoms with solid Si2H6 at 10K were investigated. The in situ and real-time reactions H + Si 2H6 to form silane and polysilanes were monitored using FT-IR. Quantitative analysis of gaseou

Diagnostics of the gas-phase thermal decomposition of Si2H6 using vacuum ultraviolet photoionization

Vacuum ultraviolet (VUV) photoionization at 10.2 eV was employed for the detection of gas-phase molecules formed after thermal decomposition of disilane at a total pressure of 30 Torr and in the temperature range of 298-740 K. The SinH2(n+1) (n=3-5) and SinH2n (n=2-5) species resulting from disilane pyrolysis in a flow reactor were directly observed using time-of-flight mass spectrometry. Unlike multiphoton ionization at 6.4 eV photons, no fragmentation was observed by the VUV single-photon ionization at 10.2 eV.

The 147-nm Photolysis of Disilane

The photodecomposition of Si2H6 at 147 nm results in the formation of H2, SiH4, Si3H8, Si4H10, Si5H12, and a solid film of amorphous silicon hydride (a-Si:H).Three primary processes are proposed to accoount for the results, namely, (a) Si2H6 + hν -> SiH2 + SiH3 + H (φa=0.61); (b) Si2H6 + hν -> SiH3SiH + 2H (φb=0.18); (c) Si2H6 + hν -> Si2H5 + H (φc=0.21).The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si2H6 are Φ(-Si2H6)=4.3+/-0.2, Φ(SiH4)=1.2+/-0.4, Φ(Si3H8)=0.91+/-0.08, Φ(Si4H10)=0.62+/-0.03, Φ(Si,wall)=2.2.Quantum yields for H2 formation were not measured.A mechanism is proposed which is shown to be in accord with the experimental facts.