7783-29-1

Usage

Uses

Used in Electronics Industry:
Si4H10 is used as a precursor in the production of silicon-based semiconductors and electronic devices due to its ability to decompose and release high-purity silicon.
Used in Chemical Industry:
Si4H10 is used as a reducing agent in various chemical reactions, as it can donate electrons to other substances.
Used in Glass Industry:
Si4H10 is used in the production of specialty glass, such as solar panels and optical fibers, due to its ability to form stable silicon compounds.
Used in Automotive Industry:
Si4H10 is used in the production of hydrogen storage materials for fuel cell vehicles, as it can store hydrogen in a stable and compact form.
Used in Aerospace Industry:
Si4H10 is used in the production of lightweight and high-strength composite materials for aerospace applications, as it can form strong bonds with other elements.

InChI:InChI=1/H10Si4/c1-3-4-2/h3-4H2,1-2H3

Upstream product

• 7664-39-3 hydrogen fluoride 
• 1590-87-0 disilane 
• 7440-21-3 monosilane 
• 14868-53-2 n-pentasilane 
• 22831-39-6 magnesium silicide 
• 1333-74-0 hydrogen 
• 7783-06-4 hydrogen sulfide 

Downstream Products

• 13465-84-4 silicon tetraiodide 

Relevant academic research and scientific papers

Synthesis of polysilanes by tunneling reactions of H atoms with solid Si2H6 at 10K

Tunneling reactions of H atoms with solid Si2H6 at 10K were investigated. The in situ and real-time reactions H + Si 2H6 to form silane and polysilanes were monitored using FT-IR. Quantitative analysis of gaseou

Diagnostics of the gas-phase thermal decomposition of Si2H6 using vacuum ultraviolet photoionization

Vacuum ultraviolet (VUV) photoionization at 10.2 eV was employed for the detection of gas-phase molecules formed after thermal decomposition of disilane at a total pressure of 30 Torr and in the temperature range of 298-740 K. The SinH2(n+1) (n=3-5) and SinH2n (n=2-5) species resulting from disilane pyrolysis in a flow reactor were directly observed using time-of-flight mass spectrometry. Unlike multiphoton ionization at 6.4 eV photons, no fragmentation was observed by the VUV single-photon ionization at 10.2 eV.

Decomposition channels of chemically activated disilane. The π bond energy of disilene and its derivatives

The Hg (3P1) sensitized photolysis of an H2/SiH4 mixture not only yields Si2H6 but also Si3H8 and Si4H10. The formation of the latter two products as well as parts of the Si2H6 yield is explained by the decomposition of chemically activated disilane, formed by the combination of two silyl radicals. The activated disilane decomposes mainly into SiH2 + SiH4 which finally reacts to Si2H6 and to a lesser extent into H2 + H3SiSiH: and H2 + H2SiSiH2. The silykilylene inserts into SiH4 yielding Si3H8, while disilene is thought to be scavenged successively by two SiH3 radicals, the main reactive species under the given conditions. From the relative rate constants of the three decomposition channels, ΔHf(H3SiSiH:) = 273 ± 11 kJ/mol can be calculated. Also a lower bound to the π bond energy of disilene Bπ(H2SiSiH2) ≥ 69 ± 11 kJ/mol is obtained. Ab initio CI calculations give Bπ(H2SiSiH2) = 93 ± 8 kJ/mol. A substituted disilene is shown to have a probable π bond energy of 108 ± 20 kJ/mol from a thermochemical analysis of literature data.

The 147-nm Photolysis of Disilane

The photodecomposition of Si2H6 at 147 nm results in the formation of H2, SiH4, Si3H8, Si4H10, Si5H12, and a solid film of amorphous silicon hydride (a-Si:H).Three primary processes are proposed to accoount for the results, namely, (a) Si2H6 + hν -> SiH2 + SiH3 + H (φa=0.61); (b) Si2H6 + hν -> SiH3SiH + 2H (φb=0.18); (c) Si2H6 + hν -> Si2H5 + H (φc=0.21).The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si2H6 are Φ(-Si2H6)=4.3+/-0.2, Φ(SiH4)=1.2+/-0.4, Φ(Si3H8)=0.91+/-0.08, Φ(Si4H10)=0.62+/-0.03, Φ(Si,wall)=2.2.Quantum yields for H2 formation were not measured.A mechanism is proposed which is shown to be in accord with the experimental facts.