7783-26-8

Usage

Uses

Used in Electronics Industry:
Trisilane is used as a precursor in the chemical vapor deposition (CVD) process for the production of silicon-based thin films and coatings. It is particularly useful for depositing silicon layers on semiconductor wafers, which are essential components in the manufacturing of integrated circuits and microelectronic devices.
Used in Solar Energy Industry:
Trisilane is employed as a source material for the production of silicon-based solar cells. The high purity and reactivity of trisilane make it an attractive option for depositing silicon layers on solar cell substrates, improving the efficiency and performance of solar energy systems.
Used in Chemical Industry:
Trisilane is used as a reagent in the synthesis of various organosilicon compounds, such as silane coupling agents, silicone polymers, and silane-based crosslinkers. These compounds have a wide range of applications in the chemical industry, including adhesives, sealants, coatings, and elastomers.
Used in Glass and Ceramics Industry:
Trisilane is utilized as a reducing agent in the production of specialty glass and ceramics. Its ability to reduce metal oxides at lower temperatures makes it a valuable component in the manufacturing process, resulting in improved properties and performance of the final products.

Properties

Colorless liquid; density 0.743 g/mL at 0°C; freezes at –117.4°C; boils at 52.9°C; vapor density 4.15 g/L at atmospheric pressure; decomposes in water; decomposes in carbon tetrachloride.

Hazard

Explodes on contact with air, reacts violently with carbon tetrachloride and chloroform.

InChI:InChI=1/H8Si3/c1-3-2/h3H2,1-2H3

Upstream product

• 7664-39-3 hydrogen fluoride 
• 7440-21-3 monosilane 
• 7783-06-4 hydrogen sulfide 
• 1333-74-0 hydrogen 
• 16853-85-3 lithium aluminium tetrahydride 
• 13596-23-1 perchlorotrisilane 
• 7440-09-7 potassium 
• 135524-36-6 Nonafluorobutansulfonsaeure-silylester 
• 7440-23-5 sodium 
• 14868-53-2 n-pentasilane 
• 1590-87-0 disilane 
• 7440-21-3 silacarbene 
• 7803-51-2 phosphan 
• 7647-01-0 hydrogenchloride 

Downstream Products

• 7440-21-3 silicon 
• 1333-74-0 hydrogen 
• 7440-21-3 monosilane 

Relevant academic research and scientific papers

Unusually selective synthesis of chlorohydrooligosilanes

New pathways towards molecular chlorohydrooligosilanes enable their one-pot synthesis in preparative amounts either by the selective chlorination of the corresponding perhydrosilanes with HCl/AlCl3 or by the partial hydrogenation of perchlorooligosilanes

Syntheses and Molecular Structures of Liquid Pyrophoric Hydridosilanes

Trisilane, isotetrasilane, neopentasilane, and cyclohexasilane have been prepared in gram scale. In-situ cryo crystallization of these pyrophoric liquids in sealed capillaries on the diffractometer allows access to the single crystal structures of these c

Synthesis of polysilanes by tunneling reactions of H atoms with solid Si2H6 at 10K

Tunneling reactions of H atoms with solid Si2H6 at 10K were investigated. The in situ and real-time reactions H + Si 2H6 to form silane and polysilanes were monitored using FT-IR. Quantitative analysis of gaseou

Silane-phenol compound, overcoat formulation, and electrophotographic imaging member

Provided are a silane-phenol compound, a crosslinked silxoane-phenolic protective overcoat layer thereof, and an electrophotographic imaging member such as photoreceptor. The silane-phenol compound comprises (i) a phenol group and (ii) a silane group selected from the group consisting of alkoxysilyl, arylalkoxysilyl, aryloxysilyl, alkylaryloxysilyl, and combination thereof. The silicone overcoat is made from a formulation comprising the silane-phenol compound and a hydroxymethylated hole transport compound. The crosslinked siloxane-phenolic overcoat may be used to manufacture an electrophotographic imaging member such as photoreceptor with improved properties such as abrasive resistance, good image quality and cleanability, etc.

Diagnostics of the gas-phase thermal decomposition of Si2H6 using vacuum ultraviolet photoionization

Vacuum ultraviolet (VUV) photoionization at 10.2 eV was employed for the detection of gas-phase molecules formed after thermal decomposition of disilane at a total pressure of 30 Torr and in the temperature range of 298-740 K. The SinH2(n+1) (n=3-5) and SinH2n (n=2-5) species resulting from disilane pyrolysis in a flow reactor were directly observed using time-of-flight mass spectrometry. Unlike multiphoton ionization at 6.4 eV photons, no fragmentation was observed by the VUV single-photon ionization at 10.2 eV.

Dehydrogenative Build-up Reactions to Silyl-Substituted Alkali Metal Germanides, Stannides, and Phosphides; Molecular Structure of Neopentasilane

The build-up reaction between monosilane and dispersed sodium or potassium in diethyleneglycol dimethyl ether leads to alkali metal silylsilanides of the composition (Na/K)SiH3-n(SiH3)n (n = 0-3) (1, 1a-c; 2, 2a-c).By subsequent reactions with silyl nonafluorobutanesulfonate, C4F9SO3SiH3, benzenesulfonic acid, PhSO3H, and methyl p-toluenesulfonate the corresponding silanes SiH4-n(SiH3)n (n = 0-4) (3, 3a-d) and methylsilanes CH3SiH3-n(SiH3)n (n = 0-3) (4a-d) were obtained in good yield.The molecular structure of neopentasilane (3d) has been determined by electron diffraction analysis.Treatment of group IV and V hydrides GeH4, PH3, and SnH4 with mixtures of sodium or potassium silylsilanides (1, 1a-c; 2, 2a-c) leads to silyl-substituted sodium or potassium germanides (Na/K)GeH3-n(SiH3)n (n = 1-3) (5a-c, 6a-c), phosphides KPH2-n(SiH3)n (n = 1-2) (7a-b), and stannides NaSnH3-n(SiH3)n (n = 1-3) (8, 8a-c). - Key Words: Alkali metal silylsilanides / Alkali metal silylgermanides / Sodium silylstannides / Potassium silylphosphides / Neopentasilane / Electron diffraction

Molecular Structures and Conformational Composition of Trisilane and Tetrasilane by Gas-Phase Electron Diffraction

The gas-phase electron diffraction patterns of trisilane and normal tetrasilane have been recorded with an all-glass inlet system and a nozzle temperature of 23 +/- 2 deg C.The molecular structure of trisilane was optimized and the valence force field calculated by ab initio MO calculations at the 6-31G**/MP2 level, and the structures and valence force fields of anti and gauche conformers of tetrasilane were calculated at the 6-31G*/SCF level.The force fields were scaled and used to calculate root mean-square vibrational amplitudes and correction terms for molecular vibrations.Refinement of a geometrically consistent ra-structure of Si3H8 yielded a Si-Si bond distance of ra=233.2(2) pm and a valence angle of aSiSiSi=110.2(4)o.Refinements of a mixture of geometrically consistent ra-models of gauche and anti conformers of Si4H10 yielded the bond distances (ra) Si(1)-Si(2)=233.5(3) and Si(2)-Si(3)=234.0(3) pm and the valence angle aSiSiSi=109.6o.The mole fraction of the gauche conformer was χ=68(9)percent corresponding to a free energy difference of 0.2(1.1) kJ mol-1 in favor of gauche.Introduction of the thermal vibration correction terms of tetrasilane calculated from the scaled quantum-mechanical force field led to significantly poorer agreement between experimental and calculated intensities.

Role of Silylene in the Deposition of Hydrogenated Amorphous Silicon

The role of silylene in the laser deposition of hydrogenated amorphous silicon has been studied with laser-induced fluorescence and deposition rate measurements.The rate constants of the reactions of silylene and disilane and of the reverse reactions have been determined.The results show that silylene is rapidly consumed, exhibiting only a small effective lifetime.It proves that generally silyllene hardly be able to reach the surface to form amorphous silicon.The comparison of the kinetic data with the deposition rates shows that in IR laser CVD silylene starts the gas-phase chemistry and that disilene is the main film-forming molecule.The UV laser process starts with a different primary dissociation leading to silylene, which also rearranges to the film-forming disilene.

Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane have been determined from direct time resolved measurements of silylene removal at room temperature.Silylene was generated and detected using laser resonance absorption flash kinetic spectroscopy.The rate constants are pressure dependent, consistent with expectations for the insertion reactions typical of silylene.The pressure dependence of the overall rate constants has been determined from 1 to 100 Torr for reaction with hydrogen and silane and from 1 to 10 Torr for reaction with disilane.The results for reaction with hydrogen and silane have been successfully modeled using RRKM theory and high pressure bimolecular rate constants have been extracted.The rate constants detrmined in this work are significantly (10-104 times) faster than those calculated from literature values for the Arrhenius parameters.These findings require a significant upward revision in the heat of formation of silylene, and may require modification of chemical vapor deposition mechanism in which silylene is invoked as a film growth precursor.

Decomposition Kinetics of a Static Direct Current Silane Glow Discharge

We have studied the decomposition kinetics of a static de silane discharge using mass spectrometric techniques.The principal neutral products observed were hydrogen, disilane, trisilane, trace amounts of higher silanes, and nonstoichiometric silicon hydride solids.The initial rates of formation of the products and depletion of the silane were measured and found to be independent of silane pressure and had a linear dependence on the discharge current.Nitric oxide, a known free-radical scavenger, was introduced into the discharge to determine the relative yields of SiH3 and SiH2.The primary decomposition was found to proceed approximately 80-90percent to the silyl radical, SiH3.The effects of NO addition were the reduction in the formation rate of disilane and trisilane and almost total suppression of solid formation.We propose a mechanism which includes both ion and neutral radical reactions and conclude that the major decomposition processes lead to SiH3 and SiH2.Kinetic treatment of the mechanism gave values for the product yields that were in good agreement with the observed yields.