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16571-41-8

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16571-41-8 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 16571-41-8 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,6,5,7 and 1 respectively; the second part has 2 digits, 4 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 16571-41:
(7*1)+(6*6)+(5*5)+(4*7)+(3*1)+(2*4)+(1*1)=108
108 % 10 = 8
So 16571-41-8 is a valid CAS Registry Number.
InChI:InChI=1/C3H9Si/c1-4(2)3/h1-3H3

16571-41-8SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name trimethylsilyl radical

1.2 Other means of identification

Product number -
Other names triethylsilyl radical

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:16571-41-8 SDS

16571-41-8Relevant articles and documents

Reaction Of Hydrogen Atoms with Hexamethyldisilane

Ellul, R.,Potzinger, P.,Reimann, B.

, p. 2793 - 2796 (1984)

The reaction of hydrogen atoms with hexamethyldisilane has been studied by pulsed, mercury-sensitized photolysis experiments using Lyman α resonance absorption and resonance fluorescence detection of H atoms.At room temperature it proceeds exclusively according to H + (CH3)3SiSi(CH3)3 -> (CH3)3SiH (1) with a rate constant k(1) = (3.55 +/- 0.25)E-14 cm3 molecule-1 s-1 (T = 295 K).The temperature dependence of the rate constant in molecular units can be expressed by log k(1) = (-10.9 +/- 0.1) - The pseudo-first-order rate constant for H atom disappearance, K1, shows a dependence on the initial hydrogen atom to substrate concentration ratio.This is explained by two competing reaction channels for the disappearance of the trimethylsilyl radical: bimolecular combination (k(2)) and combination of hydrogen atoms with trimethylsilyl radicals yielding trimethylsilane (k(3)).From the intensity dependence of k1 and under the assumption that only reactions 1, 2, and 3 are operative, model calculations yield k(3) = (2 +/- 1)E-10 cm3 molecule-1 s-1, while for k(2) only an upper limit of 3 molecule-1 s-1 can be given.Thermochemical calculations suggest that the true value for k(2) is lower, probably close to the liquid phase values.

Photolysis of some organosilylene precursors in a molecular beam

Huang, Yuhui,Sulkes, Mark,Fink, Mark J.

, p. 1 - 6 (1995)

The condensed-phase organosilylene precursors PhMeSi(SiMe3)2 (1), PhSi(SiMe3)3 (2), and (Me2Si)6 (3) were photolyzed in a molecular beam using a pulsed supersonic jet and mass spectrometric detection.Under ca. 10 ns pulsed UV illumination, we have found for the gas-phase trisilane precursors 1 and 2 that one photon results in removal of only one -SiMe3 group.Even at the highest laser power densities used, there is no evidence of removal of a second -SiMe3 to form a silylene.On the other hand, a single photolysis photon was capable of producing the silylene for the cyclohexasilane ring precursor, 3.Keywords: Silicon; Mass spectrometry; Molecular beams; Photochemistry

Mechanism of the photodissociation of 4-diphenyl(trimethylsilyl)methyl- N,N-dimethylaniline

Tasis, Dimitrios A.,Siskos, Michael G.,Zarkadis, Antonios K.,Steenken, Steen,Pistolis, Georgios

, p. 4274 - 4280 (2007/10/03)

On irradiation in hexane (248- and 308-nm laser light) 4- diphenyl(trimethylsilyl)methyl-N,N- dimethylaniline, 2, undergoes photodissociation of the C-Si bond giving 4-N,N-dimethylaminotriphenylmethyl radical, 3(·) (λ(max) at 343 and 403 nm), in very high quantum yield (Φ = 0.92). The intervention of the triplet state of 2 (λ(max) at 515 nm) is clearly demonstrated through quenching experiments with 2,3-dimethylbuta-1,3- diene, styrene, and methyl methacrylate using nanosecond laser flash photolysis (LFP). The formation of 3(·) is further demonstrated using EPR spectroscopy. The detection of the S1 state of 2 was achieved using 266-nm picosecond LFP, and its lifetime was found to be 1400 ps, in agreement with the fluorescence lifetime (τ(f) = 1500 ps, Φ(f)= 0.085). The S1 state is converted almost exclusively to the T1 state (Φ(T) = 0.92). In polar solvents such as MeCN, 2 undergoes (1) photoionization to its radical cation 2(·)+, and (2) photodissociation of the C-Si bond, giving radical 3(·) as before in hexane. The formation of 2(·)+ occurs through a two-photon process. Radical cation 2(·)+ does not fragment further, as would be expected, to 3(·) via a nucleophile(MeCN)-assisted C-Si bond cleavage but regenerates the parent compound 2. Obviously, the bulkiness of the triphenylmethyl group prevents interaction of 2(·)+ with the solvent (MeCN) and transfer to it of the electrofugal group Me3Si+. The above results of the laser flash photolysis are supported by pulse radiolysis, fluorescence measurements, and product analysis.

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