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Chlorotrimethylsilane (TMCS) is a versatile organosilicon compound commonly used as a silylating agent in organic synthesis and derivatization reactions. It is highly reactive, particularly with hydroxyl groups, making it useful for protecting alcohols, phenols, and carboxylic acids by converting them into trimethylsilyl (TMS) ethers or esters. TMCS is also employed in the production of silicones and as a precursor for other silicon-based reagents. Due to its moisture sensitivity, it reacts vigorously with water, releasing hydrogen chloride (HCl), and must be handled under anhydrous conditions. Its applications extend to gas chromatography for derivatizing polar compounds to improve volatility and detection. Proper safety precautions are necessary due to its corrosive and flammable nature.

75-77-4

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75-77-4 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 75-77-4 includes 5 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 2 digits, 7 and 5 respectively; the second part has 2 digits, 7 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 75-77:
(4*7)+(3*5)+(2*7)+(1*7)=64
64 % 10 = 4
So 75-77-4 is a valid CAS Registry Number.
InChI:InChI=1/C3H9Si.ClH/c1-4(2)3;/h1-3H3;1H/q+1;/p-1

75-77-4 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
  • Price
  • Detail
  • TCI America

  • (C0306)  Chlorotrimethylsilane  >98.0%(GC)

  • 75-77-4

  • 25mL

  • 135.00CNY

  • Detail
  • TCI America

  • (C0306)  Chlorotrimethylsilane  >98.0%(GC)

  • 75-77-4

  • 100mL

  • 280.00CNY

  • Detail
  • TCI America

  • (C0306)  Chlorotrimethylsilane  >98.0%(GC)

  • 75-77-4

  • 500mL

  • 360.00CNY

  • Detail
  • Alfa Aesar

  • (A13651)  Chlorotrimethylsilane, 98+%   

  • 75-77-4

  • 25ml

  • 184.0CNY

  • Detail
  • Alfa Aesar

  • (A13651)  Chlorotrimethylsilane, 98+%   

  • 75-77-4

  • 100ml

  • 210.0CNY

  • Detail
  • Alfa Aesar

  • (A13651)  Chlorotrimethylsilane, 98+%   

  • 75-77-4

  • 500ml

  • 553.0CNY

  • Detail
  • Alfa Aesar

  • (A13651)  Chlorotrimethylsilane, 98+%   

  • 75-77-4

  • 1000ml

  • 1013.0CNY

  • Detail
  • Sigma-Aldrich

  • (89595)  Chlorotrimethylsilane  for GC derivatization

  • 75-77-4

  • 89595-10ML

  • 229.32CNY

  • Detail
  • Sigma-Aldrich

  • (89595)  Chlorotrimethylsilane  for GC derivatization

  • 75-77-4

  • 89595-10X1ML

  • 570.96CNY

  • Detail
  • Aldrich

  • (386529)  Chlorotrimethylsilane  purified by redistillation, ≥99%

  • 75-77-4

  • 386529-25ML

  • 243.36CNY

  • Detail
  • Aldrich

  • (386529)  Chlorotrimethylsilane  purified by redistillation, ≥99%

  • 75-77-4

  • 386529-100ML

  • 772.20CNY

  • Detail
  • Aldrich

  • (386529)  Chlorotrimethylsilane  purified by redistillation, ≥99%

  • 75-77-4

  • 386529-1L

  • 4,676.49CNY

  • Detail

75-77-4SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name chlorotrimethylsilane

1.2 Other means of identification

Product number -
Other names Silane, chlorotrimethyl-

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only. CBI,Intermediates
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:75-77-4 SDS

75-77-4Synthetic route

tetramethylsilane
75-76-3

tetramethylsilane

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

Conditions
ConditionsYield
With 1,2-dichloro-ethane; aluminium trichloride at 130℃; for 17h;100%
With hydrogenchloride; aluminium trichloride
With chlorine; iodine In tetrachloromethane at 30℃;
With hydrogenchloride
diethylchlorophosphine
686-69-1

diethylchlorophosphine

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1-(1-tert-Butyl-2,2-diethyl-diphosphanyl)-2,2-dimethyl-propan-1-one
131551-67-2

1-(1-tert-Butyl-2,2-diethyl-diphosphanyl)-2,2-dimethyl-propan-1-one

Conditions
ConditionsYield
at 100℃; for 1h;A n/a
B 100%
Chloro(chloromethyl)dimethylsilane
1719-57-9

Chloro(chloromethyl)dimethylsilane

trimethylsilyl isocyanate
1118-02-1

trimethylsilyl isocyanate

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

(chloromethyl)isocyanatodimethylsilane
86845-05-8

(chloromethyl)isocyanatodimethylsilane

Conditions
ConditionsYield
for 9h; Heating;A 100%
B 95%
trimethylsilyl cyanide
7677-24-9

trimethylsilyl cyanide

(trimethylsilyl)acetyl chloride
63877-23-6

(trimethylsilyl)acetyl chloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

2-<(trimethylsilyl)oxy>propenenitrile
54276-53-8

2-<(trimethylsilyl)oxy>propenenitrile

Conditions
ConditionsYield
A 100%
B 76%
diethyl chlorophosphate
814-49-3

diethyl chlorophosphate

1-(Trimethylsilyl)imidazole
18156-74-6

1-(Trimethylsilyl)imidazole

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1-(Diethoxyphosphinyl)imidazole
16913-98-7

1-(Diethoxyphosphinyl)imidazole

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
diethyl phosphorochloridothioate
2524-04-1

diethyl phosphorochloridothioate

1-(Trimethylsilyl)imidazole
18156-74-6

1-(Trimethylsilyl)imidazole

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

Imidazol-1-yl-phosphonothioic acid O,O-diethyl ester
107313-21-3

Imidazol-1-yl-phosphonothioic acid O,O-diethyl ester

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
diethyl phosphorochloridothioate
2524-04-1

diethyl phosphorochloridothioate

1-trimethylsilyl-1,2,4-triazole
18293-54-4

1-trimethylsilyl-1,2,4-triazole

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

[1,2,4]Triazol-1-yl-phosphonothioic acid O,O-diethyl ester

[1,2,4]Triazol-1-yl-phosphonothioic acid O,O-diethyl ester

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
trimethylsilyl cyanide
7677-24-9

trimethylsilyl cyanide

tert-butyldimethylsilyl chloride
18162-48-6

tert-butyldimethylsilyl chloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

tert-butyldimethylsilyl cyanide
56522-24-8

tert-butyldimethylsilyl cyanide

Conditions
ConditionsYield
With tetra-(n-butyl)ammonium iodide at 100 - 180℃; for 4h;A n/a
B 100%
A n/a
B 77%
methanesulfonyl chloride
124-63-0

methanesulfonyl chloride

1-trimethylsilyl-1,2,4-triazole
18293-54-4

1-trimethylsilyl-1,2,4-triazole

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1-Methanesulfonyl-1H-[1,2,4]triazole
75668-13-2

1-Methanesulfonyl-1H-[1,2,4]triazole

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
n-decanoyl chloride
112-13-0

n-decanoyl chloride

(trimethylsilyl)diphenylphosphine
17154-34-6

(trimethylsilyl)diphenylphosphine

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

(n-Decanoyl)diphenylphosphan
87361-17-9

(n-Decanoyl)diphenylphosphan

Conditions
ConditionsYield
In Petroleum ether for 0.5h;A n/a
B 100%
chloro-diphenylphosphine
1079-66-9

chloro-diphenylphosphine

1-(Trimethylsilyl)imidazole
18156-74-6

1-(Trimethylsilyl)imidazole

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1-(di-phenylphosphino)imidazole
54877-59-7

1-(di-phenylphosphino)imidazole

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
diethyl phosphorylchloridite
589-57-1

diethyl phosphorylchloridite

1-(Trimethylsilyl)imidazole
18156-74-6

1-(Trimethylsilyl)imidazole

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

C7H13N2O2P
76089-86-6

C7H13N2O2P

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
1-(Trimethylsilyl)imidazole
18156-74-6

1-(Trimethylsilyl)imidazole

p-toluenesulfonyl chloride
98-59-9

p-toluenesulfonyl chloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

N-tosylimidazole
2232-08-8

N-tosylimidazole

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
1-(Trimethylsilyl)imidazole
18156-74-6

1-(Trimethylsilyl)imidazole

Diphenylphosphinic chloride
1499-21-4

Diphenylphosphinic chloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1-(diphenylphosphinoyl)imidazole
71638-08-9

1-(diphenylphosphinoyl)imidazole

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
1-trimethylsilyl-1,2,4-triazole
18293-54-4

1-trimethylsilyl-1,2,4-triazole

p-toluenesulfonyl chloride
98-59-9

p-toluenesulfonyl chloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1-(4-toluenesulfonyl)-1H-1,2,4-triazole
13578-51-3

1-(4-toluenesulfonyl)-1H-1,2,4-triazole

Conditions
ConditionsYield
In dichloromethane for 1h; Ambient temperature;A n/a
B 100%
n-dodecanoyl chloride
112-16-3

n-dodecanoyl chloride

(trimethylsilyl)diphenylphosphine
17154-34-6

(trimethylsilyl)diphenylphosphine

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

(n-Dodecanoyl)diphenylphosphan
87361-18-0

(n-Dodecanoyl)diphenylphosphan

Conditions
ConditionsYield
In Petroleum ether for 0.5h;A n/a
B 100%
undec-10-enoyl chloride
38460-95-6

undec-10-enoyl chloride

(trimethylsilyl)diphenylphosphine
17154-34-6

(trimethylsilyl)diphenylphosphine

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

Diphenyl(n-undec-10-enoyl)phosphan
87361-19-1

Diphenyl(n-undec-10-enoyl)phosphan

Conditions
ConditionsYield
In Petroleum ether for 0.5h;A n/a
B 100%
trimethylsilyl cyanide
7677-24-9

trimethylsilyl cyanide

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

cyanogen chloride
506-77-4

cyanogen chloride

C

S, SO2

S, SO2

Conditions
ConditionsYield
With thionyl chloride at 30 - 40℃; Product distribution; oth. reagent (SO2Cl2);A 100%
B 45%
C n/a
tetramethylsilane
75-76-3

tetramethylsilane

germaniumtetrachloride
10038-98-9

germaniumtetrachloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

chlorotrimethylgermane
1529-47-1

chlorotrimethylgermane

C

tetramethylgermane
865-52-1

tetramethylgermane

Conditions
ConditionsYield
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 180°C for 2.75 h, cooled; NMR, mass spectra, chromy.;A 100%
B 18%
C 82%
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 180°C for 4.5 h, cooled; NMR, mass spectra, chromy.;A 100%
B 23%
C 77%
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 200°C for 3.5 h, cooled; NMR, mass spectra, chromy.;A 100%
B 13%
C 87%
tetramethylsilane
75-76-3

tetramethylsilane

germaniumtetrachloride
10038-98-9

germaniumtetrachloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

chlorotrimethylgermane
1529-47-1

chlorotrimethylgermane

C

dimethylsilicon dichloride
75-78-5

dimethylsilicon dichloride

Conditions
ConditionsYield
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 200°C for 15 h, cooled; NMR, mass spectra, chromy.;A 50%
B 100%
C 50%
bis(bis(trimethylsilyl)amino)ytterbium * 1,2-dimethoxyethane
90669-97-9

bis(bis(trimethylsilyl)amino)ytterbium * 1,2-dimethoxyethane

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1,2-dimethoxyethane
110-71-4

1,2-dimethoxyethane

C

ytterbium(III) chloride
10361-91-8

ytterbium(III) chloride

D

ammonium chloride

ammonium chloride

Conditions
ConditionsYield
With hydrogenchloride In toluene condensing gaseous HCl with liquid nitrogen in an ampul containing toluene solution of (((CH3)3Si)2N)2Yb*CH3O(CH2)2OCH3; warming to room temperature; removing volatile compounds ((CH3)3SiCl, DME) by vac. condensation; vac. sublimation at 100°C (1E-2 mm): NH4Cl;;A 100%
B 90%
C 100%
D 92%
bis[bis(trimethylsilyl)amido][[(trimethylsilyl)methyl]stannyl]praseodymium*0.5(dimethoxyethane)

bis[bis(trimethylsilyl)amido][[(trimethylsilyl)methyl]stannyl]praseodymium*0.5(dimethoxyethane)

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

hydrogen
1333-74-0

hydrogen

C

praseodymium(III) chloride
10361-79-2

praseodymium(III) chloride

D

Chlor-tris<(trimethylsilyl)methyl>zinn
34570-67-7

Chlor-tris<(trimethylsilyl)methyl>zinn

E

1,1,1,3,3,3-hexamethyl-disilazane
999-97-3

1,1,1,3,3,3-hexamethyl-disilazane

Conditions
ConditionsYield
With hydrogenchloride In tetrahydrofuran mixt. od dry HCl (excess), Pr/Sn-complex and THF keeping dor 1 d at room temp., THF replacing by hexane in usual way; ppt. filtration of, hexane-soln. evapn. (vac.), residue crystn. twice (hexane, -70°C), GLC of volatiles;A 50%
B 87%
C 100%
D 76.2%
E 33.3%
dichloro(fluoro)(phenyl)silane
368-44-5

dichloro(fluoro)(phenyl)silane

1,1,1,3,3,3-hexamethyl-disilazane
999-97-3

1,1,1,3,3,3-hexamethyl-disilazane

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

1,1,1-trimethyl-3-phenyl-3-chloro-3-fluorodisilazane
1321987-17-0

1,1,1-trimethyl-3-phenyl-3-chloro-3-fluorodisilazane

Conditions
ConditionsYield
at 20℃;A n/a
B 100%
Methyltrichlorosilane
75-79-6

Methyltrichlorosilane

2-[(trimethylsilyl)oxy]benzoic acid trimethylsilyl ester
3789-85-3

2-[(trimethylsilyl)oxy]benzoic acid trimethylsilyl ester

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

2-chloro-2-methyl-4H-benzo[d][1,3,2]dioxasilin-4-one

2-chloro-2-methyl-4H-benzo[d][1,3,2]dioxasilin-4-one

Conditions
ConditionsYield
at 20℃; for 24h;A 100%
B 95%
dibutyltin chloride
683-18-1

dibutyltin chloride

1,3-diallyl-4-(trimethylsilyloxy)-2,6-dioxo-1,3,5-triazine
63226-47-1

1,3-diallyl-4-(trimethylsilyloxy)-2,6-dioxo-1,3,5-triazine

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

Bis(diallylisocyanurato)dibutyltin
80671-62-1

Bis(diallylisocyanurato)dibutyltin

Conditions
ConditionsYield
In neat (no solvent) mixt. heating (30-40 min, 120-160°C, distilling flask); exposition to vac. 1.33 hPa; elem. anal.;A >99
B 99.5%
trimethylsilanyl-acetic acid ethyl ester
4071-88-9

trimethylsilanyl-acetic acid ethyl ester

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

ethyl iodoacetae
623-48-3

ethyl iodoacetae

Conditions
ConditionsYield
With Iodine monochloride In tetrachloromethane for 0.5h; Ambient temperature;A n/a
B 99%
trimethylsilyl isocyanate
1118-02-1

trimethylsilyl isocyanate

N,N-diethylcarbamyl chloride
88-10-8

N,N-diethylcarbamyl chloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

diethylcarbamoyl isocyanate
40797-42-0

diethylcarbamoyl isocyanate

Conditions
ConditionsYield
With tin(IV) chloride at 100 - 120℃; for 5h;A 99%
B 90%
trimethylsilyl isocyanate
1118-02-1

trimethylsilyl isocyanate

N,N-Dimethylcarbamoyl chloride
79-44-7

N,N-Dimethylcarbamoyl chloride

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

dimethylcarbamoyl isocyanate
40797-41-9

dimethylcarbamoyl isocyanate

Conditions
ConditionsYield
With tin(IV) chloride at 100 - 120℃; for 5h;A 99%
B 90%
Phenyltrichlorosilane
98-13-5

Phenyltrichlorosilane

N-allyl-N'-trimethylsilylurea

N-allyl-N'-trimethylsilylurea

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

C7H5Cl2NOSi

C7H5Cl2NOSi

Conditions
ConditionsYield
Heating;A 99%
B n/a
4,4'-dimethoxydiphenylmethyl chloride
7525-23-7

4,4'-dimethoxydiphenylmethyl chloride

(R)-5-Oxo-1-trimethylsilanyl-pyrrolidine-2-carboxylic acid methyl ester

(R)-5-Oxo-1-trimethylsilanyl-pyrrolidine-2-carboxylic acid methyl ester

A

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

B

(R)-1-[Bis-(4-methoxy-phenyl)-methyl]-5-oxo-pyrrolidine-2-carboxylic acid methyl ester

(R)-1-[Bis-(4-methoxy-phenyl)-methyl]-5-oxo-pyrrolidine-2-carboxylic acid methyl ester

Conditions
ConditionsYield
With trifluorormethanesulfonic acid at 130℃; for 0.25h;A n/a
B 99%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

1,1,1,2,2,2-hexamethyldisilane
1450-14-2

1,1,1,2,2,2-hexamethyldisilane

Conditions
ConditionsYield
With sodium; lithium In tetrahydrofuran at 25 - 28℃; for 4h; Heating; Irradiation; ultrasound irrad. var. time, var. temperatures, var. metal purity;100%
With sodium; lithium In tetrahydrofuran at 25 - 28℃; for 4h; Irradiation;100%
With potassium fluoride; phosphorus; potassium In 5,5-dimethyl-1,3-cyclohexadiene at 90℃; for 12h; Reagent/catalyst; Temperature;97.3%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

trimethylsilyl fluoride
420-56-4

trimethylsilyl fluoride

Conditions
ConditionsYield
With pyridine hydrogenfluoride In 1,4-dioxane at 20℃; for 0.0833333h; Schlenk technique; Inert atmosphere;100%
With [((2-tBuNO)C6H4CH2)3N]TiF In tetrahydrofuran at 23℃; for 0.0833333h; Inert atmosphere;98%
With lithium fluoride In acetonitrile under 600 Torr; for 2h; Heating;80%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

Hexamethyldisiloxane
107-46-0

Hexamethyldisiloxane

Conditions
ConditionsYield
With hydrogenchloride at 20℃;100%
With sodium hydroxide In water at 30℃; for 0.416667h; Concentration; Temperature;99.97%
With styrene type I anion exchange resin In water at 45 - 75℃; for 2.5h; Concentration; Temperature; Inert atmosphere;93.8%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

trimethylsilyl perchlorate
18204-79-0

trimethylsilyl perchlorate

Conditions
ConditionsYield
With silver perchlorate In diethyl ether; dichloromethane-d2 Ambient temperature;100%
With silver perchlorate
With silver perchlorate In dichloromethane-d2 for 19h;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

ethyl acetoacetate
141-97-9

ethyl acetoacetate

ethyl 3-trimethylsiloxy-2-butenoate
13257-83-5

ethyl 3-trimethylsiloxy-2-butenoate

Conditions
ConditionsYield
With triethylamine In tetrahydrofuran; hexane at 21 - 45℃; for 3h;100%
With triethylamine In tetrahydrofuran Ambient temperature;89%
Stage #1: chloro-trimethyl-silane; ethyl acetoacetate In tetrahydrofuran; hexane at 0 - 5℃; for 0.5h; Inert atmosphere;
Stage #2: With triethylamine In tetrahydrofuran; hexane at 0 - 20℃; Inert atmosphere;
87%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

1-bromo-4-methoxy-benzene
104-92-7

1-bromo-4-methoxy-benzene

4-trimethylsilylanisole
877-68-9

4-trimethylsilylanisole

Conditions
ConditionsYield
With n-butyllithium In tetrahydrofuran; hexane at 0 - 20℃; for 1h; Inert atmosphere;100%
Stage #1: 1-bromo-4-methoxy-benzene With n-butyllithium In tetrahydrofuran; hexane at -78℃; for 1h;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 20℃;
99%
Stage #1: 1-bromo-4-methoxy-benzene With n-butyllithium In tetrahydrofuran; hexane at -78℃; Inert atmosphere; Schlenk technique;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 20℃; for 18h; Inert atmosphere; Schlenk technique;
96%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

S-phenyl hexanethioate
56974-15-3

S-phenyl hexanethioate

1-trimethylsiloxy-1-phenylthio-1-hexene
68117-64-6

1-trimethylsiloxy-1-phenylthio-1-hexene

Conditions
ConditionsYield
With lithium diisopropyl amide at -78℃;100%
Stage #1: S-phenyl hexanethioate With lithium diisopropyl amide In tetrahydrofuran; hexane at -78℃; for 0.5h;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 60℃; for 1.5h;
76%
With lithium diisopropyl amide
With lithium diisopropyl amide 1.) THF, -78 deg C, 2.) THF, RT, 2h; Yield given. Multistep reaction;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

phenylacetylene
536-74-3

phenylacetylene

1-Phenyl-2-(trimethylsilyl)acetylene
2170-06-1

1-Phenyl-2-(trimethylsilyl)acetylene

Conditions
ConditionsYield
With lithium iodide at 80℃; for 24h; Reagent/catalyst; Solvent;100%
Stage #1: phenylacetylene With ethylmagnesium bromide In tetrahydrofuran at -78 - 0℃; Inert atmosphere;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran at 0 - 20℃; Inert atmosphere;
99%
With diethylzinc In hexane; acetonitrile at 80℃; for 20h; Solvent; Temperature; Time; Schlenk technique; Inert atmosphere;99%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

cyclopentanone
120-92-3

cyclopentanone

1-(trimethylsilyloxy)cyclopentene
19980-43-9

1-(trimethylsilyloxy)cyclopentene

Conditions
ConditionsYield
With triethylamine; sodium iodide In acetonitrile at 23℃; for 1.5h; Inert atmosphere;100%
With 1,8-diazabicyclo[5.4.0]undec-7-ene In dichloromethane at 40℃; for 0.5h;98%
With magnesium In N,N-dimethyl-formamide at 15 - 25℃;94%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

stearic acid
57-11-4

stearic acid

octadecanoic acid, trimethylsilyl ester
18748-91-9

octadecanoic acid, trimethylsilyl ester

Conditions
ConditionsYield
With triethylamine In tetrahydrofuran at 20℃; Inert atmosphere;100%
In benzene
In hexane for 5h; Reflux; Inert atmosphere;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

1-butyn-4-ol
927-74-2

1-butyn-4-ol

4-(trimethylsilyl)but-3-yn-1-ol
2117-12-6

4-(trimethylsilyl)but-3-yn-1-ol

Conditions
ConditionsYield
Stage #1: 3-Butyn-1-ol With n-butyllithium In tetrahydrofuran; hexane at -78 - 20℃; for 1h;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 20℃; for 2h;
100%
Stage #1: 3-Butyn-1-ol With n-butyllithium In tetrahydrofuran; hexane at -78℃; for 1h; Schlenk technique; Inert atmosphere;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 20℃; for 2h; Schlenk technique; Inert atmosphere;
100%
Stage #1: 3-Butyn-1-ol With n-butyllithium In tetrahydrofuran; hexane at -78℃; for 1h;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 20℃; for 2h;
98%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

benzeneacetic acid methyl ester
101-41-7

benzeneacetic acid methyl ester

(1-methoxy-2-phenylvinyloxy)trimethylsilane
40195-27-5

(1-methoxy-2-phenylvinyloxy)trimethylsilane

Conditions
ConditionsYield
With n-butyllithium; N-ethyl-N,N-diisopropylamine In tetrahydrofuran at -78 - 20℃; Inert atmosphere;100%
Stage #1: benzeneacetic acid methyl ester With lithium diisopropyl amide In tetrahydrofuran at -78℃; for 2.1h; Inert atmosphere;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran at 20℃; Inert atmosphere;
100%
Stage #1: benzeneacetic acid methyl ester With lithium diisopropyl amide In tetrahydrofuran; hexane at -78℃; for 2h;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at 20℃;
91%
2-bromothiophene
1003-09-4

2-bromothiophene

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

2-bromo-5-trimethylsilylthiophene
18246-28-1

2-bromo-5-trimethylsilylthiophene

Conditions
ConditionsYield
Stage #1: 2-bromothiophene With lithium diisopropyl amide In tetrahydrofuran
Stage #2: chloro-trimethyl-silane In tetrahydrofuran
100%
Stage #1: 2-bromothiophene With n-butyllithium; diisopropylamine In tetrahydrofuran at -78 - 0℃; for 0.0833333h;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran at -78 - 20℃; for 0.5h;
91%
With lithium diisopropyl amide Yield given. Multistep reaction;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

(RS)-1-hydroxy-1-phenylpropan-2-one
90-63-1

(RS)-1-hydroxy-1-phenylpropan-2-one

methyl(α-trimethylsiloxybenzyl) ketone
26205-40-3

methyl(α-trimethylsiloxybenzyl) ketone

Conditions
ConditionsYield
With 1H-imidazole; dmap In diethyl ether100%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

diethyl (trichloromethyl)phosphonate
866-23-9

diethyl (trichloromethyl)phosphonate

O,O-diethyltrimethylsilylchloromethylphosphonate α-lithie
176100-94-0

O,O-diethyltrimethylsilylchloromethylphosphonate α-lithie

Conditions
ConditionsYield
With n-butyllithium In tetrahydrofuran; hexane at -90 - -85℃; for 0.25h;100%
With n-butyllithium In tetrahydrofuran; hexane at -80℃; for 0.25h;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

2-(3,4-dimethoxyphenyl)-2-hydroxyacetonitrile
6309-18-8

2-(3,4-dimethoxyphenyl)-2-hydroxyacetonitrile

2-(3,4-dimethoxyphenyl)-2-((trimethylsilyl)oxy)acetonitrile
95392-01-1

2-(3,4-dimethoxyphenyl)-2-((trimethylsilyl)oxy)acetonitrile

Conditions
ConditionsYield
With 1H-imidazole; dmap In diethyl ether100%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

diethoxyphosphoryl-acetic acid ethyl ester
867-13-0

diethoxyphosphoryl-acetic acid ethyl ester

ethyl P,P-bis(trimethylsilyl) phosphonoacetate
65868-40-8

ethyl P,P-bis(trimethylsilyl) phosphonoacetate

Conditions
ConditionsYield
at 100℃; for 168h; Inert atmosphere;100%
With potassium iodide In acetonitrile at 25 - 35℃; for 0.5h;
In chlorobenzene at 140℃; for 18h;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

diethyl chloromethylphosphonate
3167-63-3

diethyl chloromethylphosphonate

O,O-diethyltrimethylsilylchloromethylphosphonate α-lithie
176100-94-0

O,O-diethyltrimethylsilylchloromethylphosphonate α-lithie

Conditions
ConditionsYield
With n-butyllithium In tetrahydrofuran; hexane at -90 - -85℃; for 0.25h;100%
With n-butyllithium In tetrahydrofuran; hexane at -80℃; for 0.833333h;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

4-methoxymandelonitrile
33646-40-1

4-methoxymandelonitrile

2-(4-methoxyphenyl)-2-(trimethylsilyloxy)acetonitrile
66985-48-6

2-(4-methoxyphenyl)-2-(trimethylsilyloxy)acetonitrile

Conditions
ConditionsYield
With 1H-imidazole; dmap In diethyl ether100%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

(S)-3-hydroxymethyl-1,2,3,4-tetrahydroisoquinoline
18881-17-9, 62855-02-1, 62928-94-3, 63006-93-9

(S)-3-hydroxymethyl-1,2,3,4-tetrahydroisoquinoline

(S)-3-Trimethylsilanyloxymethyl-1,2,3,4-tetrahydro-isoquinoline
1025931-48-9

(S)-3-Trimethylsilanyloxymethyl-1,2,3,4-tetrahydro-isoquinoline

Conditions
ConditionsYield
With triethylamine In tetrahydrofuran100%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

methyl 2,3-dideoxy-6-O-toluene-p-sulphonyl-α-D-erythro-hexopyranoside
34339-62-3

methyl 2,3-dideoxy-6-O-toluene-p-sulphonyl-α-D-erythro-hexopyranoside

Toluene-4-sulfonic acid (2R,3S,6S)-6-methoxy-3-trimethylsilanyloxy-tetrahydro-pyran-2-ylmethyl ester
92413-84-8

Toluene-4-sulfonic acid (2R,3S,6S)-6-methoxy-3-trimethylsilanyloxy-tetrahydro-pyran-2-ylmethyl ester

Conditions
ConditionsYield
With 1,1,1,3,3,3-hexamethyl-disilazane In pyridine Ambient temperature;100%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

(R,R)-2,3-butandiol
24347-58-8

(R,R)-2,3-butandiol

(R,R)-butanediol bis(trimethylsilyl) ether
125473-19-0

(R,R)-butanediol bis(trimethylsilyl) ether

Conditions
ConditionsYield
With 1H-imidazole In diethyl ether at 0 - 20℃;100%
With triethylamine In dichloromethane 5 deg C to room temperature;96%
With triethylamine In tetrahydrofuran at 20℃; for 20h;92%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

1,2-octandiol
1117-86-8

1,2-octandiol

1,2-bis(trimethylsilyloxy)octane
33968-37-5

1,2-bis(trimethylsilyloxy)octane

Conditions
ConditionsYield
With triethylamine In dichloromethane for 1h; Ambient temperature;100%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

pent-1-yn-5-ol
5390-04-5

pent-1-yn-5-ol

5-trimethylsilanyl-pent-4-yn-1-ol
13224-84-5

5-trimethylsilanyl-pent-4-yn-1-ol

Conditions
ConditionsYield
With n-butyllithium Inert atmosphere;100%
Stage #1: chloro-trimethyl-silane; pent-1-yn-5-ol With n-butyllithium In tetrahydrofuran; hexane at -78 - 20℃; for 2h; Inert atmosphere;
Stage #2: With hydrogenchloride In water for 3h; Inert atmosphere;
100%
Stage #1: pent-1-yn-5-ol With n-butyllithium In tetrahydrofuran; hexane at -78℃; for 1.08333h; Inert atmosphere;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at 20℃;
100%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

5-hexyl-1-ol
928-90-5

5-hexyl-1-ol

6-trimethylsilanyl-hex-5-yn-1-ol
103437-52-1

6-trimethylsilanyl-hex-5-yn-1-ol

Conditions
ConditionsYield
Stage #1: 5-hexyl-1-ol With ethylmagnesium bromide
Stage #2: chloro-trimethyl-silane
Stage #3: With sulfuric acid In tetrahydrofuran
100%
Stage #1: 5-hexyl-1-ol With n-butyllithium In tetrahydrofuran at -78℃; Inert atmosphere;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran at -78 - 0℃; Inert atmosphere;
Stage #3: With hydrogenchloride In tetrahydrofuran; water at 0 - 20℃; Inert atmosphere;
100%
Stage #1: 5-hexyl-1-ol With dmap; n-butyllithium In tetrahydrofuran; diethyl ether; hexane at -78℃; for 1h; Inert atmosphere;
Stage #2: chloro-trimethyl-silane at -78 - 20℃; for 2h; Inert atmosphere;
99%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

allyl phenyl thioether
5296-64-0

allyl phenyl thioether

phenyl 1-(trimethylsilyl)prop-2-en-1-yl sulfide
78905-13-2

phenyl 1-(trimethylsilyl)prop-2-en-1-yl sulfide

Conditions
ConditionsYield
Stage #1: allyl phenyl thioether With n-butyllithium In tetrahydrofuran at -78℃;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran at -78 - 20℃;
100%
With n-butyllithium In tetrahydrofuran; hexane at -78℃; for 0.333333h;93%
With lithium diisopropyl amide In tetrahydrofuran at -78℃; for 3.5h;92%
With lithium diisopropyl amide In tetrahydrofuran at -78℃; Yield given;
Yield given. Multistep reaction;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

2,7-dibromonaphthalene
58556-75-5

2,7-dibromonaphthalene

2,7-naphthalenediylbis(trimethylsilane)
40490-26-4

2,7-naphthalenediylbis(trimethylsilane)

Conditions
ConditionsYield
With n-butyllithium In tetrahydrofuran -78 deg C to -20 deg C;100%
With n-butyllithium In tetrahydrofuran; hexane at -78℃; for 1.08333h; Substitution;100%
With n-butyllithium
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

2,7-dibromonaphthalene
58556-75-5

2,7-dibromonaphthalene

(7-bromonaphthalen-2-yl)trimethylsilane
99642-47-4

(7-bromonaphthalen-2-yl)trimethylsilane

Conditions
ConditionsYield
Stage #1: 2,7-dibromonaphthalene With n-butyllithium In tetrahydrofuran; hexane at -78℃; for 0.333333h;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 20℃; for 2.25h;
100%
Stage #1: 2,7-dibromonaphthalene With n-butyllithium; N,N,N,N,-tetramethylethylenediamine In diethyl ether; hexane at -78℃; for 1.83333h; Inert atmosphere;
Stage #2: chloro-trimethyl-silane In diethyl ether; hexane at -78℃; for 3h; Inert atmosphere;
81%
With n-butyllithium 1.) THF, hexane, -78 deg C, 20 min, 2.) THF, hexane, RT, 2 h; Yield given. Multistep reaction;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

benzyl 2-methylpropanoate
103-28-6

benzyl 2-methylpropanoate

((1-(benzyloxy)-2-methylprop-1-en-1-yl)oxy)trimethylsilane
480453-25-6

((1-(benzyloxy)-2-methylprop-1-en-1-yl)oxy)trimethylsilane

Conditions
ConditionsYield
With lithium hexamethyldisilazane at -78 - 20℃;100%
1.) THF, -78 deg C, 2.) HMPA, -78 deg C; Multistep reaction;
Stage #1: benzyl 2-methylpropanoate With n-butyllithium; diisopropylamine In tetrahydrofuran; hexane at -78℃; for 1h; Inert atmosphere;
Stage #2: chloro-trimethyl-silane In tetrahydrofuran; hexane at -78 - 20℃; for 20h; Inert atmosphere;

75-77-4Relevant academic research and scientific papers

A General and Selective Synthesis of Methylmonochlorosilanes from Di-, Tri-, and Tetrachlorosilanes

Naganawa, Yuki,Nakajima, Yumiko,Sakamoto, Kei

supporting information, p. 601 - 606 (2021/01/13)

Direct catalytic transformation of chlorosilanes into organosilicon compounds remains challenging due to difficulty in cleaving the strong Si-Cl bond(s). We herein report the palladium-catalyzed cross-coupling reaction of chlorosilanes with organoaluminum reagents. A combination of [Pd(C3H5)Cl]2 and DavePhos ligand catalyzed the selective methylation of various dichlorosilanes 1, trichlorosilanes 5, and tetrachlorosilane 6 to give the corresponding monochlorosilanes.

Platinum-Templated Coupling of B=N Units: Synthesis of BNBN Analogues of 1,3-Dienes and a Butatriene

Arrowsmith, Merle,Braunschweig, Holger,Brunecker, Carina,Fantuzzi, Felipe

supporting information, p. 16864 - 16868 (2021/06/28)

The 1:2 reaction of [μ-(dmpm)Pt(nbe)]2 (dmpm=bis(dimethylphosphino)methane, nbe=norbornene) with Cl2BNR(SiMe3) (R=tBu, SiMe3) yields unsymmetrical (N-aminoboryl)aminoboryl PtI2 complexes by B?N coupling via ClSiMe3 elimination. A subsequent intramolecular ClSiMe3 elimination from the tBu-derivative leads to cyclization of the BNBN unit, forming a unique 1,3,2,4-diazadiboretidin-2-yl ligand. In contrast, the analogous reaction with Br2BN(SiMe3)2 leads, via a twofold BrSiMe3 elimination, to a PtII2 A-frame complex bridged by a linear BNBN isostere of butatriene. Structural and computational data confirm π electron delocalization over the entire BNBN unit.

METHOD FOR PRODUCING HALOSILANE

-

Paragraph 0028; 0035; 0036, (2019/07/31)

PROBLEM TO BE SOLVED: To provide a method for producing halosilane that can efficiently produce halosilane. SOLUTION: Alkoxy halomethane is used as a halogenating agent and reacted with oxysilane having a structure represented by formula (a), to efficiently produce halosilane having a structure represented by formula (b) (In the formula (b), X is a chlorine atom, a bromine atom, or an iodine atom). SELECTED DRAWING: None COPYRIGHT: (C)2019,JPOandINPIT

A preparation method of the trimethyl chlorosilane (by machine translation)

-

Paragraph 0020-0033, (2019/05/02)

The invention provides a preparation method of the trimethyl chlorosilane, six-hexamethyl disilane, double-(trichloromethyl) carbonate, catalyst is added to the solvent, thereby obtaining a reaction mixture, said reaction mixture is added to the initiator, the reaction is carried out, after the reaction is finished after treatment can get trimethylchlorosilane. The method of the invention is safe and controllable, and easy to operate, is friendly to the environment, the resulting high purity of the product, by-product is only carbon dioxide gas, the elimination of industrial production in significant corrosion source - hydrogen chloride, greatly improve the working environment in the production process, and the solvent, catalyst and initiator can be used repeatedly, is a green-friendly chlorination process, has wide industrial application prospect, is suitable for application. (by machine translation)

SYNTHESIS OF ORGANO CHLOROSILANES FROM ORGANOSILANES

-

Page/Page column 36; 37, (2019/04/16)

The invention relates to a process for the production of chlorosilanes by subjecting one or more hydndosilanes to the reaction with hydrogen chloride in the presence of at least one ether compound, and a process for the production of such hydndosilanes serving as starting materials.

DISILANE-, CARBODISILANE-AND OLIGOSILANE CLEAVAGE WITH CLEAVAGE COMPOUND ACTING AS CATALYST AND HYDROGENATION SOURCE

-

Page/Page column 39; 40, (2019/04/16)

The invention relates to a process for the manufacture of monosilanes of formula (I): MexSiHyClz (I), comprising: the step of subjecting a silane substrate (methyldisilanes, methyloligosilanes, or carbodisilanes) to a cleavage reaction of the silicon-silicon bond(s) or the silicon- carbon bonds in silane substrates the reaction involving a cleavage compound selected from a quaternary Group 15 onium compound R4 QX, a heterocyclic amine, a heterocyclic ammonium halide, or a mixture of R3P and RX. The starting material disilanes to be cleaved has the formula (II): MemSi2HnClo (II) The starting material oligosilanes to be cleaved have the general formula (III): MepSiqHrCIs (II I), The starting material carbodisilanes to be cleaved have the general formula (IV): (MeaSiHbCle)-CH2-(MecSiHdClf) (IV)

Nickel-Catalyzed Selective Cross-Coupling of Chlorosilanes with Organoaluminum Reagents

Naganawa, Yuki,Guo, Haiqing,Sakamoto, Kei,Nakajima, Yumiko

, p. 3756 - 3759 (2019/09/12)

Nickel-catalyzed cross-coupling reactions of chlorosilanes with organoaluminum reagents were developed. An electron-rich Ni(0)/PCy3 complex was found to be an effective catalyst for the desired transformation. The reaction of dichlorosilanes 1 proceeded to give the corresponding monosubstituted products 2. Trichlorosilanes 4 underwent selective double substitution to furnish the corresponding monochlorosilanes 2. Overall, the selective synthesis of a series of alkylmonochlorosilanes 2 from di- and trichlorosilanes was achieved using the present catalytic systems.

Synthesis of Functional Monosilanes by Disilane Cleavage with Phosphonium Chlorides

Santowski, Tobias,Sturm, Alexander G.,Lewis, Kenrick M.,Felder, Thorsten,Holthausen, Max C.,Auner, Norbert

supporting information, p. 3809 - 3815 (2019/02/13)

The Müller–Rochow direct process (DP) for the large-scale production of methylchlorosilanes MenSiCl4?n (n=1–3) generates a disilane residue (MenSi2Cl6?n, n=1–6, DPR) in thousands of tons annually. This report is on methylchlorodisilane cleavage reactions with use of phosphonium chlorides as the cleavage catalysts and reaction partners to preferably obtain bifunctional monosilanes MexSiHyClz (x=2, y=z=1; x,y=1, z=2; x=z=1, y=2). Product formation is controlled by the reaction temperature, the amount of phosphonium chloride employed, the choice of substituents at the phosphorus atom, and optionally by the presence of hydrogen chloride, dissolved in ethers, in the reaction mixture. Replacement of chloro by hydrido substituents at the disilane backbone strongly increases the overall efficiency of disilane cleavage, which allows nearly quantitative silane monomer formation under comparably moderate conditions. This efficient workup of the DPR thus not only increases the economic value of the DP, but also minimizes environmental pollution.

Disilane Cleavage with Selected Alkali and Alkaline Earth Metal Salts

Santowski, Tobias,Sturm, Alexander G.,Lewis, Kenrick M.,Felder, Thorsten,Holthausen, Max C.,Auner, Norbert

supporting information, p. 13202 - 13207 (2019/10/22)

The industry-scale production of methylchloromonosilanes in the Müller–Rochow Direct Process is accompanied by the formation of a residue, the direct process residue (DPR), comprised of disilanes MenSi2Cl6-n (n=1–6). Great research efforts have been devoted to the recycling of these disilanes into monosilanes to allow reintroduction into the siloxane production chain. In this work, disilane cleavage by using alkali and alkaline earth metal salts is reported. The reaction with metal hydrides, in particular lithium hydride (LiH), leads to efficient reduction of chlorine containing disilanes but also induces disproportionation into mono- and oligosilanes. Alkali and alkaline earth chlorides, formed in the course of the reduction, specifically induce disproportionation of highly chlorinated disilanes, whereas highly methylated disilanes (n>3) remain unreacted. Nearly quantitative DPR conversion into monosilanes was achieved by using concentrated HCl/ether solutions in the presence of lithium chloride.

CLEAVAGE OF METHYLDISILANES TO METHYLMONOSILANES

-

Page/Page column 29, (2019/04/16)

The invention relates to a process for the manufacture of methylmonosilanes comprising the step of subjecting one or more methyldisilanes to the cleavage reaction of the silicon-silicon bond, and optionally a step of separating the resulting methylmonosilanes.

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