22398-80-7Relevant academic research and scientific papers
White phosphorus and metal nanoparticles: A versatile route to metal phosphide nanoparticles
Carenco, Sophie,Demange, Matthieu,Shi, Jing,Boissiere, Cedric,Sanchez, Clement,Le Floch, Pascal,Mezailles, Nicolas
, p. 5578 - 5580 (2010)
P4 reaction with metal NPs (In, Pb, Zn) provides an easy access to the corresponding metal phosphide NPs in a soft and stoichiometric reaction. Size-influence on the reactivity is investigated in the case of indium. The Royal Society of Chemistry 2010.
Critical diameter for III-V nanowires grown on lattice-mismatched substrates
Chuang, Linus C.,Moewe, Michael,Chase, Chris,Kobayashi, Nobuhiko P.,Chang-Hasnain, Connie,Crankshaw, Shanna
, (2007)
The authors report the experimental observation of a critical diameter (CD) of III-V compound semiconductor epitaxial nanowires (NWs) grown on lattice-mismatched substrates using Au-catalyzed vapor-liquid-solid growth. The CD is found to be inversely proportional to the lattice mismatch. NWs with well-aligned orientation are synthesized with catalysts smaller than the CD. Well-aligned InP NWs grown on a Si substrate exhibit a record low photoluminescence linewidth (5.1 meV) and a large blueshift (173 meV) from the InP band gap energy due to quantization. Well-aligned InAs NWs grown on a Si substrate are also demonstrated.
EFFECT OF PH3 PYROLYSIS ON THE MORPHOLOGY AND GROWTH RATE OF InP GROWN BY HYDRIDE VAPOR PHASE EPITAXY.
Karlicek Jr.,Mitcham,Ginocchio,Hammarlund
, p. 470 - 474 (1987)
The incomplete pyrolysis of PH//3 is shown to have a significant effect on the growth rate and morphology of InP grown by hydride vapor phase epitaxy. Using ultraviolet absorption spectroscopy to determine the extent of PH//3 pyrolysis, the growth rate of InP is shown to increase with decreasing PH//3 pyrolysis. Incomplete PH//3 pyrolysis is shown to dramatically increase the formation of growth hillocks on LT AN BR 100 RT AN BR InP epitaxial layers. The use of various metal catalysts to expedite PH//3 pyrolysis to eliminate hillock formation during InP growth is described, and a qualitative model of PH//3 induced hillock growth is presented.
Benzene-thermal route to InP and InAs nanocrystals using triphenylphosphine and triphenylarsine as pnicogen sources
Wang, Junli,Yang, Qing
, p. 306 - 307 (2008)
Nanocrystalline InP and InAs were solvothermally synthesized by the reaction of newly reduced indium with triphenylphosphine (PPh3) and triphenylarsine (AsPh3) in benzene. The products were characterized by XRD, TEM, and EDX. PPh3 and AsPh3 with high safety as excellent P and As sources will provide a novelly alternative synthetic route to III-V semiconductor compouds. Copyright
Use of organoindium hydrides for the preparation of organoindium phosphides. Synthesis and molecular structure of [(Me3CCH2)2InP(t-Bu)2]2
Beachley Jr.,Chao, Sun-Hua L.,Churchill, Melvyn Rowen,Lake, Charles H.
, p. 3992 - 3997 (1993)
The indium phosphide [(Me3CCH2)2InP(t-Bu)2]2 has been prepared from K[In(CH2CMe3)3H] and ClP(t-Bu)2 in pentane. When In(CH2CMe3)3 and HP(t-Bu)2 were present in a 1:1 mol ratio, heating to 105-115°C for 5 days was required, whereas when In(CH2CMe3)3 and HP(t-Bu)2 were in a 5:1 mol ratio in pentane solution, the desired indium product formed in 6 days at room temperature. Excess phosphine, In(CH2CMe3)3, and HP(t-Bu)2 in a 1:5 mol ratio in pentane, significantly retarded the rate of formation of [(Me3CCH2)2InP(t-Bu)2]2. Thermal decomposition of [(Me3CCH2)2InP(t-Bu)2]2 to form InP occurred at 245°C in 1 h. The compound [(Me3-CCH2)2InP(t-Bu)2]2 crystallizes in the centrosymmetric orthorhombic space group Pbcn (No. 60) with a = 11.742(3) A?, b = 20.194(6) A?, c = 17.909(4) A?, V = 4246(2) A?3, and Z = 4. The structure was solved and refined to R = 6.68% and Rw = 6.24% for all 4920 independent reflections and R = 2.76% and Rw = 3.47% for those 2525 reflections with |Fo| > 6.0σ(|Fo|). The molecule lies on a 2-fold axis which passes through the two indium atoms and requires that the In2P2 core be strictly planar.
Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications
Kawaguchi, Kenichi,Ekawa, Mitsuru,Kuramata, Akito,Akiyama, Tomoyuki,Ebe, Hiroji,Sugawara, Mitsuru,Arakawa, Yasuhiko
, p. 4331 - 4333 (2004)
A change in the density and wavelength of InAs quantum dots (QDs) on InGaAsP/InP(100) substrate grown by metalorganic vapor-phase epitaxy (MOVPE) in accordance with variation in the growth conditions was studied, aiming at optical device applications in the 1.55 μm region. In the moderate V/III ratio region, the size of QDs was found to decrease while the density increased as the group-V source was reduced, but on the other hand, both of them increased monotonously with increasing InAs supply. The combination of changing the V/III ratio and InAs supply allowed us to control the density and wavelength of QDs independently so that QDs with a density as high as 5.6 × 1010 and a 1.6 μm emission were obtained. The letter reports the MOVPE growth technique of QDs on InGaAsP/InP(100), which connects QDs with mature 1.55 urn device technology.
Rapid synthesis of high-quality InP nanocrystals
Xu, Shu,Kumar, Sandeep,Nann, Thomas
, p. 1054 - 1055 (2006)
A rapid new method for preparation of monodisperse InP-nanocrystals was developed. A highly reactive indium precursor and tris(trimethylsilyl)phosphine (TMS)3P was reacted within a weakly coordinating solvent in the presence of a supporting protic agent. The yielded InP-nanocrystals had a very narrow size distribution without any size selection process. The precursor and ligand effects were considered as critical factors in control of nucleation and crystal growth process. Different ligands were introduced to study the reaction mechanism. The new method not only yielded the best InP-nanocrystals so far, but also includes the potential for preparation within a continuous flow reactor, because the utilized ester is liquid at room temperature. Copyright
Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition
Reitzenstein,Muench,Hofmann,Forchel,Crankshaw,Chuang,Moewe,Chang-Hasnain
, (2007)
The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical vapor deposition. By means of low temperature microphotoluminescence experiments, the authors determined the optical properties of as-grown NWs. The emission of individual NWs is characterized by small linewidths as low as 2.3 meV. Blueshifts of the NW emission energy between 25 and 56 meV with respect to bulk InP are related to radial carrier confinement in nanowires with diameters between 15 and 50 nm. Time resolved investigations reveal a low surface recombination velocity of 6× 102 cms and indicate thermally activated nonradiative surface recombination above approximately 20 K.
Reconstruction of an InP (001) surface grown by metalorganic vapor phase epitaxy in atmospheric hydrogen environment
Kawamura,Watanabe,Utsumi,Uwai,Matsui,Kagoshima,Tsusaka,Fujikawa
, p. 996 - 998 (2000)
A reconstructed surface of InP (001) substrate, grown by metalorganic vapor phase epitaxy under atmospheric hydrogen environment, is investigated by using grazing incident x-ray diffraction. Fractional-order diffractions of (n/2 m) were observed, showing the existence of a (2 X 1) domain on the surface. Calculations based on the P-dimer model suggest that there are P dimers whose bonding is parallel to the [110] direction and indium displacement in the second layer.
Growth of quantum-confined indium phosphide inside MCM-41
Agger, Jonathan R.,Anderson, Michael W.,Pemble, Martyn E.,Terasaki, Osamu,Nozue, Yasuo
, p. 3345 - 3353 (1998)
An array of analytical techniques comprising powder X-ray diffraction, solid-state NMR spectroscopy, high-resolution transmission electron microscopy, nitrogen adsorption, and UV/vis diffuse reflectance spectroscopy has been applied to study the incorpora
