22398-80-7

Basic information

• Product Name: INDIUM PHOSPHIDE
• Synonyms: InP;INDIUM(III) PHOSPHIDE;Indium phosphide (99.999%-In) PURATREM;Indium phosphide wafer;Indiumphosphidemetalsbasispiecesanddownblack;Indiumphosphidepolycrystallinelump;Indiumphsophidewafer;INDIUM(III) PHOSPHIDE, PIECES, 3-20 MESH , 99.998%
• CAS NO: 22398-80-7
• Molecular Formula: InP
• Molecular Weight: 145.79
• EINECS: 244-959-5
• Product Categories: Catalysis and Inorganic Chemistry;Ceramics;Chemical Synthesis;IndiumMetal and Ceramic Science;Phosphide;inorganic compound
• Mol File: 22398-80-7.mol
• Article Data: 66

Chemical Properties

• Melting Point: 1070°C
• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: /pieces
• Density: 4,787 g/cm3
• Water Solubility: Insoluble in water.
• Merck: 14,4953
• CAS DataBase Reference: INDIUM PHOSPHIDE(CAS DataBase Reference)
• NIST Chemistry Reference: INDIUM PHOSPHIDE(22398-80-7)
• EPA Substance Registry System: INDIUM PHOSPHIDE(22398-80-7)

Safety Data

• Hazard Codes: T
• Safety Statements: 24/25-45-53
• RIDADR: 3288
• WGK Germany: 3
• RTECS: NL1800000
• TSCA: Yes
• Hazardous Substances Data: 22398-80-7(Hazardous Substances Data)

Usage

Chemical Properties

black crystal(s); 6mm pieces and smaller with 99.999% purity; semiconductor; band gap, eV, 1.42 (0K) and 1.35 (300K); mobility (300K), cm2/(V·s), 4600 electrons and 150 holes; dielectric constant 12.4; effective mass 0.077 electrons and 0.64 holes [KIR82] [CER91] [STR93]

Uses

Different sources of media describe the Uses of 22398-80-7 differently. You can refer to the following data:
1. InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
2. In electronics for research on semiconductors.

Flammability and Explosibility

Notclassified

InChI:InChI=1/In.P

Upstream product

• 12672-70-7 indium chloride 
• 7803-51-2 phosphan 
• 15573-38-3 Tris(trimethylsilyl)phosphane 
• 10025-82-8 indium(III) chloride 
• 2501-94-2 tert-butylphosphine 
• 3385-78-2 trimethyl indium 
• 67-56-1 methanol 
• 22519-64-8 indium(III)trichloride tetrahydrate 
• 603-35-0 triphenylphosphine 
• 12185-10-3 phosphorous 

Relevant articles and documents

White phosphorus and metal nanoparticles: A versatile route to metal phosphide nanoparticles

P4 reaction with metal NPs (In, Pb, Zn) provides an easy access to the corresponding metal phosphide NPs in a soft and stoichiometric reaction. Size-influence on the reactivity is investigated in the case of indium. The Royal Society of Chemistry 2010.

EFFECT OF PH3 PYROLYSIS ON THE MORPHOLOGY AND GROWTH RATE OF InP GROWN BY HYDRIDE VAPOR PHASE EPITAXY.

The incomplete pyrolysis of PH//3 is shown to have a significant effect on the growth rate and morphology of InP grown by hydride vapor phase epitaxy. Using ultraviolet absorption spectroscopy to determine the extent of PH//3 pyrolysis, the growth rate of InP is shown to increase with decreasing PH//3 pyrolysis. Incomplete PH//3 pyrolysis is shown to dramatically increase the formation of growth hillocks on LT AN BR 100 RT AN BR InP epitaxial layers. The use of various metal catalysts to expedite PH//3 pyrolysis to eliminate hillock formation during InP growth is described, and a qualitative model of PH//3 induced hillock growth is presented.

Use of organoindium hydrides for the preparation of organoindium phosphides. Synthesis and molecular structure of [(Me3CCH2)2InP(t-Bu)2]2

The indium phosphide [(Me3CCH2)2InP(t-Bu)2]2 has been prepared from K[In(CH2CMe3)3H] and ClP(t-Bu)2 in pentane. When In(CH2CMe3)3 and HP(t-Bu)2 were present in a 1:1 mol ratio, heating to 105-115°C for 5 days was required, whereas when In(CH2CMe3)3 and HP(t-Bu)2 were in a 5:1 mol ratio in pentane solution, the desired indium product formed in 6 days at room temperature. Excess phosphine, In(CH2CMe3)3, and HP(t-Bu)2 in a 1:5 mol ratio in pentane, significantly retarded the rate of formation of [(Me3CCH2)2InP(t-Bu)2]2. Thermal decomposition of [(Me3CCH2)2InP(t-Bu)2]2 to form InP occurred at 245°C in 1 h. The compound [(Me3-CCH2)2InP(t-Bu)2]2 crystallizes in the centrosymmetric orthorhombic space group Pbcn (No. 60) with a = 11.742(3) A?, b = 20.194(6) A?, c = 17.909(4) A?, V = 4246(2) A?3, and Z = 4. The structure was solved and refined to R = 6.68% and Rw = 6.24% for all 4920 independent reflections and R = 2.76% and Rw = 3.47% for those 2525 reflections with |Fo| > 6.0σ(|Fo|). The molecule lies on a 2-fold axis which passes through the two indium atoms and requires that the In2P2 core be strictly planar.

Rapid synthesis of high-quality InP nanocrystals

A rapid new method for preparation of monodisperse InP-nanocrystals was developed. A highly reactive indium precursor and tris(trimethylsilyl)phosphine (TMS)3P was reacted within a weakly coordinating solvent in the presence of a supporting protic agent. The yielded InP-nanocrystals had a very narrow size distribution without any size selection process. The precursor and ligand effects were considered as critical factors in control of nucleation and crystal growth process. Different ligands were introduced to study the reaction mechanism. The new method not only yielded the best InP-nanocrystals so far, but also includes the potential for preparation within a continuous flow reactor, because the utilized ester is liquid at room temperature. Copyright

Reconstruction of an InP (001) surface grown by metalorganic vapor phase epitaxy in atmospheric hydrogen environment

A reconstructed surface of InP (001) substrate, grown by metalorganic vapor phase epitaxy under atmospheric hydrogen environment, is investigated by using grazing incident x-ray diffraction. Fractional-order diffractions of (n/2 m) were observed, showing the existence of a (2 X 1) domain on the surface. Calculations based on the P-dimer model suggest that there are P dimers whose bonding is parallel to the [110] direction and indium displacement in the second layer.

Synthesis, optical and morphological characterization of doped InP/ZnSe NCs

We report on the Ag-, Fe-, and Co-doping of InP/ZnSe QDs using the growth-doping method. Doping the InP/ZnSe NCs with Ag caused a red-shift in the emission spectra with increasing dopant levels while the PL intensity decreased. Fe-doping resulted in blue-shifted emission spectra. The cobalt-doping (Co-doping) had no effect on the emission peak position. Instead, it had a quenching effect on the PL intensities. The HRTEM images showed well-defined lattice fringes for the doped InP/ZnSe NCs while the XRD analyses showed that they retained their zinc blende structure even after doping.

Catalyst-free growth of In(As)P nanowires on silicon

The catalyst-free metal organic vapor phase epitaxial growth of In(As)P nanowires on silicon substrates is investigated using in situ deposited In droplets as seeds for nanowire growth. The thin substrate native oxide is found to play a crucial role in the nanowire formation. The structure of the nanowires is characterized by photoluminescence and electron microscopy measurements. The crystal structure of the InP nanowires is wurtzite with its c axis perpendicular to the nanowire axis. Adding arsenic precursor to the gas phase during growth results in a bimodal photoluminescence spectrum exhibiting peak at the InAsP and InP band gap energies.

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures.

Ionized impurity scattering in periodically δ-doped InP

The quantum mobility in the individual minibands of InP with periodic Si δ doping was estimated from the Shubnikov-de Haas spectra of the samples, measured at 4.2 K in fields of 0-14 T. The set of samples studied had a sheet density of Si atoms of about 4.9 X 1012 cm-2 in each doped layer, and a doping period in the range 90-300 A. A theoretical model for the quantum mobility in individual minibands was developed, and theoretical estimates of the quantum mobility are in reasonable agreement with the experimental values. It is observed that at a fixed doping period the quantum mobilities increase with the index of the miniband, and the quantum mobility in an individual miniband decreases when the doping period is made shorter. The dependence of the quantum mobility on the miniband index and doping periodicity correlates with the dependence of the mean distance between electrons and the doped layer on the same quantities. These results demonstrate that in δ-doped semiconductors the binding length of the quantum-confined electronic charge is a very important parameter, determining the carrier mobility which can be attained in these systems.

Rapid oxidation of InP nanoparticles in air

InP nanoparticles (NPs) in the size range of 1.5-3?nm were synthesized using colloidal chemistry methods. Exposure of these NPs to air resulted in rapid oxidation, as shown by transmission electron microscopy. Diffraction and spectroscopic measurements confirmed the formation of In2O3. Similar behavior was observed for commercial InP NPs, even when capped with a ZnS shell. Photoluminescence studies suggest that the oxidation occurs even while InP NPs are still dispersed in hexane, albeit at a much slower rate.

Defect-free InP nanowires grown in [001] direction on InP (001)

The InP nanowires grown by metalorganic vapor phase epitaxy directly on InP substrates were discussed. It was found that wires exhibited nearly square cross sections and perfect zinc-blende crystalline structure free of stacking faults. It was observed that the photoluminescence measurements of single nanowires exhibited a narrow and intense emission peak at approximately 1.4 eV. The wire growth direction was also elaborated as a mean of controlled formation of nanowires on substrates.

Selective area growth of InP and defect elimination on Si (001) substrates

We report the selective area growth of InP layers in submicron trenches on Si (001) substrates by using a thin Ge buffer layer. The antiphase domain boundaries in InP layers are suppressed by engineering the local Ge surface profile. The mechanism of atomic step formation and the corresponding method for step density control are presented. We discuss the impact of the surface profile of the Ge buffer layer on the formation of antiphase domain boundaries as well as on InP nucleation. A minimum step density of 0.25 nm-1 is required to avoid antiphase domain boundaries while a higher step density substantially reduces the stacking faults and twins in the InP nucleation layer. By employing the threading dislocation necking effect and the properly controlled Ge surface profile, high-quality InP layers have been obtained in submicron trenches.

Chemical beam epitaxial growth of Si-doped GaAs and InP by using silicon tetraiodide

Silicon tetraiodide (SiI4), which has a very weak Si-I bond strength (70 kcal/mol), is successfully employed as a novel Si dopant in the chemical beam epitaxy of GaAs and InP. No precracking is necessary before supplying SiI4 with He carrier gas. High electrical quality is ascertained for both GaAs and InP with linear Si doping controllability in the range from 2×1016 to 6×1018 cm-3 with a uniformity of less than 2% within a 3-in.-diam area. The electron mobility in a GaAs with a carrier concentration of 1×1017 cm-3 is 4400 cm2/Vs and that in InP with a carrier concentration of 4×1017 cm-3 is 2400 cm2/Vs, respectively. Abrupt interfaces and precise on-off controllability without any memory effect is also confirmed by secondary-ion-mass, spectroscopy measurements. The electrical activation ratio of Si in SiI4 for both GaAs and InP is almost 100% in the range studied here. These versatile features suggest that SiI4 is a promising candidate as a Si dopant source for chemical beam epitaxy growth.

Two-source coevaporation technique for synthesis of indium phosphide films with controlled composition

Synthesis of indium phosphide films with controlled composition by coevaporation technique has been demonstrated. Films with three different In:P ratios were deposited to represent phosphorous rich, stoichiometric and phosphorous poor InP films. Microstructural and compositional studies indicated films to be polycrystalline in nature, with grain size and shape varied with In:P ratio in the films. X-ray diffraction pattern indicated reflections from (1 1 1), (2 2 0) and (3 1 1) planes of InP only. The surface roughness of the films estimated from AFM studies was found to be 30 nm. PL spectrum measured at 10 K was dominated by a strong peak located ～1.35 eV. Characteristic Raman peaks for InP at ～306 cm-1 (TO) and ～341 cm-1 (LO) were observed.

A novel metalorganic route for the direct and rapid synthesis of monodispersed quantum dots of indium phosphide

Nanometric particles of InP are readily prepared by the decomposition of the complex In(PBu2(t))3 at 167°C in 4-ethylpyridine; the resulting materials show marked quantum confinement effects, and was investigated using optical absorption and photoluminescence spectroscopies, and transmission electron microscopy.

Hydrogen adsorption on the indium-rich indium phosphide (001) surface: A novel way to produce bridging In-H-In bonds

The indium phosphide (001) surface provides a unique chemical environment for studying the reactivity of hydrogen toward the electron-deficient group IIIA element, indium. Hydrogen adsorption on the In-rich Δ(2 × 4) reconstruction produced a neutral, cova

Vertically aligned, catalyst-free InP nanowires grown by metalorganic chemical vapor deposition

Vertically-aligned InP nanowires are grown by metalorganic chemical vapor deposition (MOCVD) without the use of a deposited metal catalyst. A surface reconstruction induces indium droplets to form on the surface and thus act as nucleation sites for nanowire growth. Vertical growth from the InP(111)B substrate along with transmission electron microscopy (TEM) analysis indicate epitaxial growth from the substrate in the [111]B direction. A uniform cross section along the longitudinal axis can be achieved by optimizing the input VIII ratio. Small variations in the diameter and length are seen under optimal growth conditions.

Hydrothermal Synthesis of InP Semiconductor Nanocrystals

Pure InP nanocrystals were synthesized in aqueous ammonia (potassium stearate, 0.01 mol*L-1) at 170 deg C for 12 h. The X-ray diffraction pattern was of the cubic phase with lattice constant a=5.8523+/-5E-4 Angstroem. The secondary particles with 180 nm consisting of fine InPNCs with 15 min in size were found from the transmission electron microscope images. The optimal reaction conditions were searched, and a possible reaction mechanism was discussed.

Investigation of indium phosphide nanocrystal synthesis using a high-temperature and high-pressure continuous flow microreactor

The important parameters for the synthesis of indium phosphide nanocrystals (InP NCs) are examined in a continuous three-stage microfluidic system (see figure). InP NC growth is largely independent of the experimental parameters that are significant in CdSe NC syntheses, such as mixing temperature and reagent concentrations. However, the concentration of myristic acid (MA) is important role for the growth of InP NCs. Copyright

Charge separation in heterostructures of InP nanocrystals with metal particles

The optical and electron paramagnetic resonance (EPR) properties of InP nanocrystals, in which metallic gold or indium is present as an incorporated part of the nanocrystals, have been studied. A study of Au/InP quantum rods supports different carrier localization regimes compared to metal-free quantum rods, including the charge-separated state for which the electron and hole are located in different parts of the heterostructure. They also show that elongated semiconductors that grow on metallic catalysts have electronic properties that are different from those of pure semiconductor nanocrystals of the same shape. We have also developed a simple method for growing melted indium particles on the surface of colloidal spherical InP nanocrystals, and in these In/InP nanocrystals the emission is completely quenched while the absorption spectrum moves to red due to the strong mixing of the semiconductor and metal electronic states. ? 2005 American Chemical Society.

Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition

Catalyst-free InP nanowires were grown on Si (1 0 0) substrates by metal organic chemical vapor deposition. In this method, in situ deposited In droplets are seeds of the InP nanowires growth. In order to control the growth of epitaxial InP nanowires, a d

Method for producing InP quantum dot precursors and method for producing InP quantum dots

The present invention pertains to a method for producing InP quantum dot precursors from a phosphorus source and an indium source, wherein a silylphosphine compound represented by general formula (1), which contains a compound represented by general formula (2) in an amount of 0.3 mol% or less, is used as the phosphorus source. Further, the present invention provides a method for producing InP quantum dots, said method comprising heating the InP quantum dot precursors at a temperature of 200-350 DEG C inclusive to thereby give InP quantum dots. (R is as defined in the description.).

Continuous Nucleation and Size Dependent Growth Kinetics of Indium Phosphide Nanocrystals

Aminophosphines derived from N,N′-disubstituted ethylenediamines (R-N(H)CH2CH2N(H)-R; R = ortho-tolyl, phenyl, benzyl, iso-propyl, and n-octyl) were used to adjust the kinetics of InP nanocrystal formation by more than 1 order of mag