50350-62-4

Usage

Uses

Used in Silicon-based Material Production:
Tetrakis(trichlorosilyl)silane is used as a precursor in the production of various silicon-based materials, such as silicon dioxide and silicon carbide. Its reactivity allows for the formation of these materials through chemical reactions.
Used in Organic Synthesis:
Tetrakis(trichlorosilyl)silane is used as a reagent in organic synthesis, where it can participate in various chemical reactions to form desired organic compounds.
Used in Chemical Vapor Deposition Processes:
Tetrakis(trichlorosilyl)silane is used as a precursor in chemical vapor deposition (CVD) processes, where it is vaporized and reacts on a substrate to form thin films of silicon-containing materials. This application is particularly useful in the semiconductor and electronics industries for creating layers in integrated circuits and other electronic devices.

Upstream product

• 13465-77-5 hexachlorodisilane 
• 13596-23-1 perchlorotrisilane 

Downstream Products

• 10026-04-7 tetrachlorosilane 
• 31411-98-0 1,1,1,2,2-pentachlorodisilane 
• 62218-01-3 bis(trichlorsilyl)chlorosilane 
• 10025-78-2 trichlorosilane 
• 62257-60-7 1,1,1,3,3,3-hexachloro-2-(trichlorosilyl)trisilane 

Relevant academic research and scientific papers

Synthesis of Wiberg's tetrasilatetrahedrane (tBu3Si) 4Si4 by a one-pot procedure

A one-pot synthesis of the tetrasilatetrahedrane (tBu3Si) 4Si4 was achieved by the reaction of HSiCl3 and Na[SitBu3]. In this reaction the silane tBu3SiH was obtained along with (tBu3

Interactions of chloromethyldisilanes with tetrakis(dimethylamino)ethylene (TDAE), formation of [TDAE] [Si3Me2Cl7]

The chlorodisilanes SiClMe2-SiClMe2 (1), SiCl2Me-SiCl2Me (2), SiCl3-SiCl3 (3) and a 9:1 mixture of 2 and SiCl3-SiCl2Me (4) were reacted with the electron-rich alkene tetrakis-(dimethylamino)-ethylene (TDAE) in n-hexane as well as in polar solvents. While 1 gave no reaction at all, 3 underwent a disproportionation reaction into SiCl4 and Si(SiCl3)4. Also 2 and mixtures of 2 and 4 were disproportionated into MeSiCl3 (2a) and methylchlorooligosilanes. Additionally a crystalline mixture of Si3Me3Cl6 -TDAE (5a) plus Si3Me2Cl7 -TDAE (5b) was obtained by reaction of a 9:1 mixture of 2 and 4 with TDAE in n-hexane as well as in 1,2-dimethoxyethane. The reaction of 2 with TDAE in acetonitrile (MeCN) led to a crystalline precipitation of [TDAE]Cl2 -MeCN (6.MeCN) in addition to MeSiCl3 and methylchlorooligosilanes. The structures of 5b and 6.MeCN were determined by X-ray crystallography beside their NMR and IR spectroscopic characterization. Compound 5b crystallizes in the monoclinic space group P2/c (Z = 4), 6.MeCN in the orthorhombic space group Pna21 (Z = 4). The structure of 5b reveals a [TDAE].+ radical cation and a 1, 2-Me2Si3Cl7- anion with a pentacoordinated central silicon atom.