5089-31-6Relevant articles and documents
A vinyl silylsilylene and its activation of strong homo- and heteroatomic bonds
Roy, Matthew M. D.,Ferguson, Michael J.,McDonald, Robert,Zhou, Yuqiao,Rivard, Eric
, p. 6476 - 6481 (2019/07/12)
The facile synthesis of a rare two-coordinate acyclic silylene (R2Si:) that is stabilized using a bulky vinylic N-heterocyclic olefin ligand and the strongly σ-donating hypersilyl group [Si(SiMe3)3]- is reported. This vinyl-substituted silylene exhibits an excellent combination of prolonged thermal stability along with high reactivity towards small molecules. Despite being stable for months in solution, the reactivity of this new silylene is manifest in its ambient temperature activation of strong B-H, Si-Cl, C-O, P-P and C-H bonds.
Reductive elimination of hypersilyl halides from zinc(II) complexes. implications for electropositive metal thin film growth
Sirimanne, Chatu T.,Kerrigan, Marissa M.,Martin, Philip D.,Kanjolia, Ravindra K.,Elliott, Simon D.,Winter, Charles H.
supporting information, p. 7 - 9 (2015/03/03)
Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83-99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155°C and then single-step weight losses between 200 and 275°C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250°C afforded zinc metal in 97-99% yield, Si(SiMe3)3X in 91-94% yield, and THF in 81-98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition.
