54514-59-9Relevant academic research and scientific papers
Metalated diphosphanylsiloxanes with polycyclic and polymeric structures
von H?nisch, Carsten,Stahl, Sven
, p. 2780 - 2783 (2007)
The reactions of the diphosphanylsiloxane O(SiiPr2PH2)2 (1) with MiPr3 (M = Ga, In) produced the polycyclic compounds [O{SiiPr2(PH)MiPr2}{SiiPr2(P)MiPr}] 2 (2, 3). Compounds 2 and 3 are composed of three M2P2 rings forming a ladder structure and two OSi2P2M rings. By reactions of 1 with n-BuLi the polymeric compound [O(SiiPr2PHLi)2(THF)(TMEDA)] · THF (4) was obtained.
The reactions of dialkylgallium hydrides with tert-butylethynylbenzenes - A systematic investigation into the course of hydrogallation reactions
Uhl, Werner,Claesener, Michael,Haddadpour, Sima,Jasper, Beate,Hepp, Alexander
, p. 417 - 423 (2008/01/27)
The reactions of bis- and tris(tert-butylethynyl)benzenes with dialkylgallium hydrides afforded two different types of products. 1,4-Di(tert-butylethynyl)benzene and dialkylgallium hydrides R2GaH bearing relatively small substituents (R = Et, nPr) gave the expected addition products with each CC triple bond inserted into a Ga-H bond. The intact GaR 2 groups are attached to those carbon atoms which are in α-position to the benzene rings, and intermolecular Ga-C interactions led to the formation of one-dimensional coordination polymers. In contrast secondary reactions with the release of the corresponding trialkylgallium derivatives GaR3 (R = Et, nPr, iPr, CH2tBu, tBu) were observed for all hydrogallation reactions involving the trisalkyne 1,3,5-tris(tert-butylethynyl) benzene. A similar reaction was observed upon treatment of the 1,4-bisalkyne with a dialkylgallium hydride bearing a relatively bulky substituent (R = neopentyl). Cyclophane type molecules are formed in all these cases with two or three gallium atoms in the bridging positions between both benzene rings. The Royal Society of Chemistry.
Preparation of organometal compounds
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Page 6, (2008/06/13)
A method of preparing organometal compounds that does not use oxygenated solvents is provided. The compounds produced by such method are particularly useful as precursor compounds for metalorganic chemical vapor deposition processes used in the manufacture of electronic devices. Methods of depositing metal films using such organometal compounds are also provided.
Metalorganic compounds
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, (2008/06/13)
A process is provided for the production of metalorganic compounds by reacting a Grignard reagent with a Group II, Group III or Group V metal halide in a tertiary alkyl amine solvent to form a metalorganic adduct, isolating the adduct and dissociating the adduct to leave the metalorganic compound.
