Detail of "3852-09-3"

Reference

Fabrication of a semiconductor device incorporating complete removal of a photoresist

Fabrication of a semiconductor device incorporating complete removal of a photoresist. Cho, Ihl Hyun (Hynix Semiconductor Inc., S. Korea). U.S. Pat. Appl. Publ. US 2004014288 A1 22 Jan 2004, 6 pp. (English). (United States of America).Several substances with their cas registry numbers 3852-09-3 and 7803-62-5 may be metioned in this study. CODEN: USXXCO. CLASS: ICM: H01L021-8234. ICS: H01L021-3205; H01L021-4763. NCL: 438275000; 438585000. APPLICATION: US 2003-618292 11 Jul 2003. PRIORITY: KR 2002-40702 12 Jul 2002. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 74 The invention relates to the fabrication of a semiconductor device incorporating complete removal of a photoresist, resulting in improved reliability of the gate oxide film. The fabrication process consists of (i) forming an isolating film on a given region of a semiconductor substrate to define a first region and a second region; (ii) forming a first oxide film on the entire structure and then removing the first oxide film from the second region using a photoresist film pattern; (iii) removing the photoresist film pattern using a solvent; (iv) implementing an oxidization process to form a second oxide film on the semiconductor substrate in the second region; (v) forming a polysilicon film on the entire structure and then patterning the polysilicon film to form gate electrodes in the first and second regions, resp., and implementing an impurity ion implantation process to form junction regions at given regions on the semiconductor substrate. .

Cleaning liquid for lithography

Nakayama, Kazuhiko; Hidesaka, Shinichi (Tokyo Ohka Kogyo Co., Ltd., Japan).Several substances are used for example 100-66-3 and 3852-09-3 which are their cas registry numbers. PCT Int. Appl. WO 2007013311 A1 1 Feb 2007, 13pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IS, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (Japanese). (World Intellectual Property Organization). CODEN: PIXXD2. APPLICATION: WO 2006-JP314026 14 Jul 2006. PRIORITY: JP 2005-219373 28 Jul 2005. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) The cleaning liq. is used for cleaning and removing unnecessary portions of a resist film formed on a substrate or a photoresist remaining in a photoresist supply system when a resist pattern is formed by lithog. As such a cleaning liq., there is used a solvent which is capable of completely dissolving and removing an unnecessary resist while being able to be dried quickly after use. Since such a solvent is required not to adversely affect the resist film after processing, components of the solvent depend on the kinds of resists it is used for. A cleaning liq. which is effective for a photoresist for ArF excimer laser that is composed of an acrylic polymer has not been known until now. A cleaning liq., which is effective for removing a photoresist for ArF excimer laser, contains an alkoxycarboxylic acid alkyl ester (e.g., Me methoxyproprionate) alone or together with an alkoxybenzene (e.g., anisole) as a solvent mixt. .