Reference

The control of the electrical conductivity of germanium vanadate glasses by the admixture of chlorine during preparation

The control of the electrical conductivity of germanium vanadate glasses by the admixture of chlorine during preparation.Some chemicals with cas registry numbers like 7718-98-1 and 1310-53-8 are also used. Kutub, A. A.; Khan, M. N.; Khawaja, E. E.; Hogarth, C. A. (Dep. Phys., Umm-Al-Qura Univ., Makkah Al-Mukaramah, Saudi Arabia). J. Mater. Sci., 19(5), 1563-7 (English) 1984. CODEN: JMTSAS. ISSN: 0022-2461. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) The elec. cond. of Ge vanadate glasses depends on the relative concns. of V4+ and V5+ ions. By adding VCl3 to the melt when the glass is formed, the added Cl which acts as an oxidizing agent alters the ratio of concn. of V ions and thus the cond. The optical absorption coeffs. and d.c. conductivities of Ge vanadate glasses were measured as functions of VCl3 content. The activation energy of cond. increases with Cl content, the increase of the activation energy corresponding to the change in optical gap energy. .

New technologies for metalization of semiconductor devices

New technologies for metalization of semiconductor devices. Chadda, Madan M.; Scheffelmann, Franz; Stoeger, Wolfgang (Ges. Gleichrichterbau Elektron. m.b.H., Semikron, Nuernberg D-8500, Fed. Rep. Ger.). Forschungsber. - Bundesminist. Forsch. Technol., Technol. Forsch. Entwickl., BMFT-FB-T 83-035, 59 pp. (German) 1983. CODEN: BFTEAJ. ISSN: 0340-7608. DOCUMENT TYPE: Report CA Section: 76 (Electric Phenomena) Section cross-reference(s): 55, 56, 67 New methods were studied for the electroless deposition of Al, Ni, Pd, and alloy contacts for semiconductor devices. The Al deposition from the decompn.Several substances with their cas registry numbers 7718-98-1 and 95-55-6 may be metioned in this study. of organometallics was studied for Si, glass, SiO2, Al2O3, Cu, Cr-Ni steel, and Teflon substrates. Catalysts for this decompn. are Ti-(C2H5)TiCl2, ZrCl4, HfCl4, and UCl3. Ohmic contacts are prepd. by heating to form an Al-1.7% Si alloy or depositing Ni on the cleaned Al surface. The uses of photomask etching and left-off techniques in patterning the Al contacts were investigated. The reductive deposition of Co, Ni, B, and P alloys with W and Mo from NaH2PO2 baths is described with Au catalysts. The Ni deposition on Pb-contg. passiwating glasses was studied. Pd Schottky contracts with Si are prepd. by reductive deposition with tetrachloropalladic acid in baths contg. either amino acids, amino alcs., NaH2PO2, or NH2NH2.H2O. The Pd contacts have poor adhesion. .