12030-24-9

Basic information

• Product Name: INDIUM(III) SULFIDE
• Synonyms: INDIUM SULFIDE;INDIUM SESQUISULFIDE;INDIUM(III) SULFIDE;INDIUM(III) SULFIDE RED;indiumsulfide(in2s3);diindium trisulphide;INDIUM(III) SULFIDE, 99.99%;INDIUM SULFIDE, 99.999%
• CAS NO: 12030-24-9
• Molecular Formula: In₂S₃
• Molecular Weight: 325.83
• EINECS: 234-742-3
• Product Categories: Chalcogenides;Materials Science;Metal and Ceramic Science;metal chalcogenides
• Mol File: 12030-24-9.mol

Chemical Properties

• Melting Point: 1050°C
• Appearance: Red-orange/Powder
• Density: 4,45 g/cm3
• Water Solubility: Insoluble in water.
• Sensitive: Moisture Sensitive
• CAS DataBase Reference: INDIUM(III) SULFIDE(CAS DataBase Reference)
• NIST Chemistry Reference: INDIUM(III) SULFIDE(12030-24-9)
• EPA Substance Registry System: INDIUM(III) SULFIDE(12030-24-9)

Safety Data

• Hazard Codes: Xn
• Statements: 20/21/22-36/37/38
• Safety Statements: 26-36
• RIDADR: UN2813
• WGK Germany: 3
• TSCA: Yes
• HazardClass: 4.3
• PackingGroup: III
• Hazardous Substances Data: 12030-24-9(Hazardous Substances Data)

Usage

Uses

Used in Solar Energy Industry:
Indium(III) sulfide is used as a low-hazard buffer material in copper-indium-gallium-diselenide (CIGS) photovoltaic solar cells. It serves as a replacement for the toxic material cadmium sulfide, improving the properties of solar cells and reducing their environmental impact.
Used in Semiconductor Industry:
As a mid-band gap semiconductor, indium(III) sulfide has potential applications in various semiconductor devices and technologies, owing to its unique electronic properties and the ability to be integrated with other materials for enhanced performance.
The preparation of indium(III) sulfide can be achieved through different methods, such as heating indium (In) and sulfur (S) or by precipitating with hydrogen sulfide (H2S) from weakly acidic solutions. With a high purity level of up to 99.999%, this compound is a valuable material for advancing the development of sustainable and efficient solar energy solutions.

InChI:InChI=1/2In.3S/rIn2S3/c3-1-5-2-4

Upstream product

• 7783-06-4 hydrogen sulfide 
• 22537-49-1 indium(III) 
• 22519-64-8 indium(III)trichloride tetrahydrate 
• 17356-08-0 thiourea 
• 22519-64-8 indium trichloride trihydrate 
• 1194631-73-6 [Et₄N][In(p-thiocresol)4] 
• 52-90-4 L-Cysteine 
• 7704-34-9 sulfur 
• 1313-82-2 sodium sulfide 
• 10025-82-8 indium(III) chloride 
• 62-55-5 thioacetamide 
• 12135-76-1 ammonium sulfide 

Downstream Products

• 37231-03-1 indium sulfide 
• 12030-05-6 indium(III) nitride 
• 7704-34-9 sulfur 
• 7783-06-4 hydrogen sulfide 
• 12030-05-6 indium nitride 

Relevant articles and documents

Synthesis and characterization of In2S3 nanoparticles

In this paper, we report a novel solution route to prepare In2S3 nanoparticles through directly dispersing melted indium in a sulfur-dissolved solvent. X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and electr

Physical properties of CdS-In2S3 thin films

The optical, electrical, photoelectric, and luminescent properties of CdS-In2S3 films prepared by spray pyrolysis were investigated. The films were found to consist of solid solutions and/or the compound CdIn2S4

The annealing effect on structural, optical and photoelectrical properties of CuInS2/In2S3 films

Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS2/In2S3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 °C

Ba3LnInS6 (Ln = Pr, Sm, Gd, Yb) and Ba 2LnGaS5 (Ln = Pr, Nd): Syntheses, structures, and magnetic and optical properties

Six new quaternary rare-earth sulfides Ba3LnInS6 (Ln = Pr, Sm, Gd, Yb) and Ba2LnGaS5 (Ln = Pr,Nd) have been synthesized for the first time. Ba3LnInS6 (Ln =Pr, Sm, Gd, Yb) belong to the centrosymmetric space groupR3c of the trigonal system. The structures contain infinite onedimensional anionic chains 1 [LnInS6]6-, which are built from face-sharing LnS6 distorted triangular prisms and InS 6octahedra. Ba2LnGaS5 (Ln = Pr, Nd) crystallize in the centrosymmetric space group I4/mcm of the tetragonal system.Their structures consist of (BaLn)S layers built from (BaLn)S8 bicapped trigonal prisms. These layers are stacked perpendicular to the c axis and further connected by GaS4 tetrahedra to form a three-dimensional framework with channels occupied by Ba2+ cations. As deduced from magnetic susceptibility measurements on Ba2NdGaS5, it is paramagnetic and obeys the Curie?Weiss law. Besides, the band gap of Ba2NdGaS5 is determined to be about 2.12(2) eV.

A novel noble-metal-free binary and ternary In2S3 photocatalyst with WC and “W-Mo auxiliary pairs” for highly-efficient visible-light hydrogen evolution

Herein, noble-metal-free In2S3-WC and In2S3-based photocatalysts with dual cocatalysts of flower-like MoS2 and bulk WC were synthesized through a facile solvothermal reaction. Electrochemical results indicated WC increased the interface conductance of photocatalyst and boosted the transference of photogenerated carriers. The optimal In2S3-WC show a hydrogen production rate of 128.11 μmol·h?1·g?1, which is around 6 times higher than In2S3-1%Pt (20.73 μmol·h?1·g?1). The above results demonstrate commercial WC has a crucial impact of replacing precious metal and separating carriers. Morphology characterization exhibited hydrangea In2S3 and flower-like MoS2 were attached to bulk WC. Gratifyingly, photocurrent, impedance and photoluminescence results demonstrated MoS2 further effectively separated the photogenerated carriers. Remarkably, the higher hydrogen generation rate of 390.52 μmol·h?1·g?1 obtained by the optimal ternary In2S3-WC-MoS2 composite was around 3 and 18 times higher than the optimal In2S3-WC and In2S3-1% Pt. The photocatalytic results demonstrated that “W-Mo auxiliary pairs” was a great efficient synergistic cocatalyst for In2S3 to increase active sites and improve e--h+ pairs separation for H2 generation. Furthermore, a probable reaction mechanism of the enhanced photocatalytic H2 generation was also proposed. This presented research provides an effective concept to design novel and efficient noble-metal-free photocatalyst with “W-Mo auxiliary pairs” for prominent H2 generation activity.

Five new chalcohalides, Ba3GaS4X (X = Cl, Br), Ba3MSe4Cl (M = Ga, In), and Ba7In 2Se6F8: Syntheses, crystal structures, and optical properties

Five new chalcohalides, Ba3GaS4X (X = Cl, Br), Ba3MSe4Cl (M = Ga, In), and Ba7In 2Se6F8, have been synthesized by conventional high-temperature solid-state method. The

Novel method for the preparation of inorganic sulfides and selenides. I. Binary materials and group II-VI phosphors

A novel method for the synthesis of a wide range of metal sulfides and selenides is described. Polysulfide solutions formed by the dissolution of sulfur in hydrazine monohydrate have been shown to contain the hexasulfide and tetrasulfide anions. The actio

N,N′-Dialkyldithiocarbamate chelates of indium(III): Alternative synthetic routes and thermodynamics characterization

Alternative synthetic routes to prepare N,N′-dialkyldithiocarbamate complexes of indium(III), In(S2CNR2)3 (R = CH3, C2H5, n-C3H7, i-C3H7, n-C4H9 and i-C4H9) from the metallic element and from indium monohalides, InX(X = Cl, Br and I) were established. The proposed mechanism of reaction involving InX considering a ligand redistribution reaction of XIn(S2C-NR2)2 initially produced, which could be derived from the insertion of InX into sulfur-sulfur bond of the tetralkylthiuram disulfide. The thermal decomposition of the In(S2CNR2)3 (R = CH3, C2H5, n-C3H7, i-C3H7, n-C4H9 and i-C4H9) compounds was investigated by the thermogravimetric technique, where two pathways were detected, depending on the dialkyldithiocarbamato ligand. The first step leads to indium metal, or alternatively In2S3, as the final residue for R = C2H5, n-C3H7, i-C4H9 and for R = CH3, i-C3H7, n-C4H9, respectively. The corresponding standard molar enthalpies of sublimation of all compounds were determined by means of differential scanning calorimetry and methods of estimation.

Spray pyrolysed In2S3 thin films: A potential electron selective layer for large area inverted bulk-heterojunction polymer solar cells

In this paper, we report the results of investigations on the potential of spray pyrolysis technique in depositing electron selective layer over larger area for the fabrication of inverted bulk-heterojunction polymer solar cells. The electron selective layer (In2S3) was deposited using spray pyrolysis technique and the linear heterojunction device thus fabricated exhibited good uniformity in photovoltaic properties throughout the area of the device. An MEH-PPV:PCBM inverted bulk-heterojunction device with In 2S3 electron selective layer (active area of 3.25×3.25cm2) was also fabricated and tested under indoor and outdoor conditions. From the indoor measurements employing a tungsten halogen lamp (50mW/cm2 illumination), an open-circuit voltage of 0.41 V and a short-circuit current of 5.6 mA were obtained. On the other hand, the outdoor measurements under direct sunlight (74mW/cm2) yielded an open-circuit voltage of 0.46 V and a short-circuit current of 9.37 mA. Copyright

Synthesis, structure, and properties of Li2In2MQ 6 (M = Si, Ge; Q = S, Se): A new series of IR nonlinear optical materials

The four isostructural compounds Li2In2MQ6 (M = Si, Ge; Q = S, Se) have been synthesized for the first time. They crystallize in the noncentrosymmetric monoclinic space group Cc with the three-dimensional framework composed of corner-sharing LiQ4, InQ 4, and MQ4 tetrahedra. The second-harmonic-generation signal intensities of the two sulfides and two selenides were close to those of AgGaS2 and AgGaSe2, respectively, when probed with a laser with 2090 nm as the fundamental wavelength. They possess large band gaps of 3.61(2) eV for Li2In2SiS6, 3.45(2) eV for Li2In2GeS6, 2.54(2) eV for Li 2In2SiSe6, and 2.30(2) eV for Li 2In2GeSe6, respectively. Moreover, these four compounds all melt congruently at relatively low temperatures, which makes it feasible to grow bulk crystals needed for practical application by the Bridgman-Stockbarger method.