12030-05-6

Basic information

• Product Name: Indium nitride
• Synonyms: Indium nitride (InN); nitridoindium
• CAS NO: 12030-05-6
• Molecular Formula: InN
• Molecular Weight: 128.8247
• EINECS: 247-130-6
• Mol File: 12030-05-6.mol

Chemical Properties

• CAS DataBase Reference: Indium nitride(CAS DataBase Reference)
• NIST Chemistry Reference: Indium nitride(12030-05-6)
• EPA Substance Registry System: Indium nitride(12030-05-6)

Safety Data

• Hazardous Substances Data: 12030-05-6(Hazardous Substances Data)

Upstream product

• 121-44-8 triethylamine 
• 7440-74-6 indium 
• 7727-37-9 nitrogen 
• 12030-24-9 indium(III) sulfide 
• 7664-41-7 ammonia 
• 22398-80-7 indium(III) phosphide 
• 57-13-6 urea 
• 3385-78-2 trimethyl indium 
• 923-34-2 Triethylindium 
• 177159-36-3 C₁₀H₂₄InN₅, low tempperatue, triclinic, P₁- 
• 112-90-3 (Z)-9-octadecen-1-amine 
• 13510-35-5 indium(III) iodide 
• 10025-82-8 indium(III) chloride 

Relevant articles and documents

Pulsed laser deposited nanostructured InN thin films as field emitters

InN thin films were deposited on c-cut Al2O3 substrates using the DC plasma assisted pulsed laser deposition technique. X-ray diffraction (XRD) studies showed the single phase, polycrystalline nature of the InN thin films with wurtzite structure. Surface morphology of the films, as seen by atomic force microscopy (AFM), consisted of densely packed nanocrystalline grains of InN. The rms value of surface roughness was found to be ～35?nm. AFM images also revealed the hexagonal features with sharp edges and protrusions of InN. The field emission characteristics of InN/Al2O3 were investigated in ultra high vacuum (1×10-8?Torr) using the diode configuration. The turn-on field, required to draw an emission current density of 10?μA/cm2, was observed to be ～3.5?V/μm. The maximum emission current density obtained was 230?μA/cm2 when the applied electric field strength was ～4?V/μm. The Fowler-Nordheim (FN) plot obtained from the current-voltage characteristic was found to be linear in accordance with the quantum mechanical tunneling phenomenon. The field enhancement factor, β, estimated from the slope of the FN plot was 21,167?cm-1. To the best of our knowledge this is the first report of field emission studies of InN/Al2O3 with such high values of β, which is comparable to that obtained for GaN or IrO2.

Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

The structure and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced a contamination free surface. Low-energy electron diffraction yielded a 1×1 hexagonal pattern demonstrating a well-ordered c -plane surface. High-resolution electron energy loss spectra exhibited a Fuchs-Kliewer surface phonon and modes assigned to a surface N-H species. Assignments were confirmed by observation of isotopic shifts following atomic deuterium cleaning. No In-H species were observed, and since an N-H termination of the surface was observed, N-polarity indium nitride is indicated.

Organoindium azides: New precursors to indium nitride

The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer {(CF3SO3)In[(CH2)3NMe2)]2(μ-N3)In[(CH

Terahertz investigation of high quality indium nitride epitaxial layers

We report on the optical characterization of InN layers in the THz range and magnetic fields up to 13 T. The results are interpreted using the dielectric function formalism, with contributions of cyclotron resonance, phonons, plasmons and helicon wave exc

Infrared lasing in InN nanobelts

Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and w

Solvothermal synthesis of gallium and indium nitrides using lithium amide

Results of the investigation of the reactions of GaCI3, InCI3 and InI3 with LiNH2 under solvothermal conditions in benzene, which lead to metal nitrides, are reported. GaN is obtained as a cubic phase or as a mixture of cubic and hexagonal phases, depending on temperature. The effect of the addition of surfactants on the formation of GaN was explored. InN products were always contaminated with indium metal, even at low reaction temperatures. The addition of excess LiNH 2 or the use of InI3 instead of InCI3 gave products with less In metal.

Prevention of in droplets formation by HCl addition during metal organic vapor phase epitaxy of InN

The low decomposition temperature of InN and relatively high thermal stability of NH3 necessitate the use of a high NH3/TMIn ratio to prevent In droplet formation on the surface. This work shows that the addition of Cl in the form of HCl (Cl/In molar ratio range of 0.3-1.4) to the growth chamber allows the growth of high quality InN films without the formation of a second In phase at a very low value of the N/In molar inlet ratio (2500). Photoluminescence spectra in the temperature range of 144 to 4.5 K showed a broad spectral band with a cutoff energy close to the reported minimum of the InN band gap energy (0.65 eV).

Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55±0.23 eV and the conduction band offset is deduced to be -2.01±0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.

High-gain photoconductivity in semiconducting InN nanowires

We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosens

Indium nitride crystals with flower-like structure

Preparation of indium nitride at atmospheric pressure has been examined by means of halide chemical vapour deposition; from the SEM observations of the crystals deposited onto an Si(100) substrate it was found that they showed flower-like structure.