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Cas Database

10026-04-7

10026-04-7

Identification

  • Product Name:Silane, tetrachloro-

  • CAS Number: 10026-04-7

  • EINECS:233-054-0

  • Molecular Weight:169.898

  • Molecular Formula: Cl4Si

  • HS Code:2812 19 90

  • Mol File:10026-04-7.mol

Synonyms:Siliconchloride (SiCl4) (8CI);LS 10;LS 10 (silane);Perchlorosilane;Siliconchloride;Silicon tetrachloride;Tetrachlorosilicon;Tetrachlorosilane;

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Safety information and MSDS view more

  • Pictogram(s):CorrosiveC,IrritantXi

  • Hazard Codes:C,Xi

  • Signal Word:Warning

  • Hazard Statement:H315 Causes skin irritationH319 Causes serious eye irritation H335 May cause respiratory irritation

  • First-aid measures: General adviceConsult a physician. Show this safety data sheet to the doctor in attendance.If inhaled If breathed in, move person into fresh air. If not breathing, give artificial respiration. Consult a physician. In case of skin contact Wash off with soap and plenty of water. Consult a physician. In case of eye contact Rinse thoroughly with plenty of water for at least 15 minutes and consult a physician. If swallowed Never give anything by mouth to an unconscious person. Rinse mouth with water. Consult a physician.

  • Fire-fighting measures: Suitable extinguishing media Use water spray, alcohol-resistant foam, dry chemical or carbon dioxide. Wear self-contained breathing apparatus for firefighting if necessary.

  • Accidental release measures: Use personal protective equipment. Avoid dust formation. Avoid breathing vapours, mist or gas. Ensure adequate ventilation. Evacuate personnel to safe areas. Avoid breathing dust. For personal protection see section 8. Prevent further leakage or spillage if safe to do so. Do not let product enter drains. Discharge into the environment must be avoided. Pick up and arrange disposal. Sweep up and shovel. Keep in suitable, closed containers for disposal.

  • Handling and storage: Avoid contact with skin and eyes. Avoid formation of dust and aerosols. Avoid exposure - obtain special instructions before use.Provide appropriate exhaust ventilation at places where dust is formed. For precautions see section 2.2. Store in cool place. Keep container tightly closed in a dry and well-ventilated place.

  • Exposure controls/personal protection:Occupational Exposure limit valuesBiological limit values Handle in accordance with good industrial hygiene and safety practice. Wash hands before breaks and at the end of workday. Eye/face protection Safety glasses with side-shields conforming to EN166. Use equipment for eye protection tested and approved under appropriate government standards such as NIOSH (US) or EN 166(EU). Skin protection Wear impervious clothing. The type of protective equipment must be selected according to the concentration and amount of the dangerous substance at the specific workplace. Handle with gloves. Gloves must be inspected prior to use. Use proper glove removal technique(without touching glove's outer surface) to avoid skin contact with this product. Dispose of contaminated gloves after use in accordance with applicable laws and good laboratory practices. Wash and dry hands. The selected protective gloves have to satisfy the specifications of EU Directive 89/686/EEC and the standard EN 374 derived from it. Respiratory protection Wear dust mask when handling large quantities. Thermal hazards

Supplier and reference price

  • Manufacture/Brand
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  • Manufacture/Brand:Usbiological
  • Product Description:Tetrachlorosilane
  • Packaging:100g
  • Price:$ 305
  • Delivery:In stock
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  • Manufacture/Brand:TRC
  • Product Description:Tetrachlorosilane
  • Packaging:5g
  • Price:$ 45
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  • Manufacture/Brand:TCI Chemical
  • Product Description:Tetrachlorosilane >98.0%(T)
  • Packaging:500g
  • Price:$ 45
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  • Manufacture/Brand:TCI Chemical
  • Product Description:Tetrachlorosilane >98.0%(T)
  • Packaging:100g
  • Price:$ 34
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  • Manufacture/Brand:TCI Chemical
  • Product Description:Tetrachlorosilane >98.0%(T)
  • Packaging:25g
  • Price:$ 20
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  • Manufacture/Brand:Strem Chemicals
  • Product Description:Silicon(IV) chloride, fiber optic grade (99.9999%-Si, 50ppm-Fe) PURATREM
  • Packaging:100g
  • Price:$ 68
  • Delivery:In stock
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  • Manufacture/Brand:Strem Chemicals
  • Product Description:Silicon(IV) chloride, fiber optic grade (99.9999%-Si, 50ppm-Fe) PURATREM, 98-0147, contained in a 50 ml electropolished Swagelok(R) cylinder (96-1077) for CVD/ALD
  • Packaging:50g
  • Price:$ 1085
  • Delivery:In stock
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  • Manufacture/Brand:Strem Chemicals
  • Product Description:Silicon(IV) chloride, fiber optic grade (99.9999%-Si, 50ppm-Fe) PURATREM
  • Packaging:500g
  • Price:$ 272
  • Delivery:In stock
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  • Manufacture/Brand:Sigma-Aldrich
  • Product Description:Silicon tetrachloride packaged for use in deposition systems
  • Packaging:25ml
  • Price:$ 1180
  • Delivery:In stock
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  • Manufacture/Brand:Sigma-Aldrich
  • Product Description:Silicon tetrachloride 99.998% trace metals basis
  • Packaging:100ml
  • Price:$ 93.2
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Relevant articles and documentsAll total 58 Articles be found

Trimethyl- and trichlorosilylcobalt tetracarbonyls and the hydrosilation of ethylene

Baay, Yvonne Louise,MacDiarmid, Alan G.

, p. 986 - 994 (1969)

The new compound (CH3)3SiCo(CO)4 was synthesized by the reaction of (CH3)3SiH with either Co2(CO)8 or HCo(CO)4. The interaction of Cl3SiH or CH3S

Schumb, W. C.

, p. 587 - 595 (1942)

Preparation of Hexafluorodisilane and Reactions of Hexafluorodisilane and Hexachlorodisilane with Sulfur Trioxide

Suresh, Bettadapura Srinivasaiah,Padma, Doddaballapur Krishnamurthy

, p. 1867 - 1868 (1985)

Hexafluorodisilane has been prepared by the fluorination of hexachlorodisilane or hexabromodisilane by potassium fluoride in boiling acetonitrile, in yields approximating 45 and 60percent respectively.Hexafluorodisilane has been characterised by infrared

-

Zemany,Price

, p. 4222 (1948)

-

Tris(trichlorosilyl)tetrelide Anions and a Comparative Study of Their Donor Qualities

Teichmann, Julian,Kunkel, Chantal,Georg, Isabelle,Moxter, Maximilian,Santowski, Tobias,Bolte, Michael,Lerner, Hans-Wolfram,Bade, Stefan,Wagner, Matthias

, p. 2740 - 2744 (2019)

Trichlorosilylated tetrelides [(Cl3Si)3E]? have been prepared by adding 1 equiv of a soluble Cl? salt to (Cl3Si)4Si (E=Si) or 4 Si2Cl6/GeCl4 (E=Ge). To asse

-

Rochow, E. G.

, p. 963 - 965 (1945)

-

Nonclassical complex of dichlorosilylene with CO: direct spectroscopic detection

Boganov, S. E.,Egorov, M. P.,Lalov, A. V.,Promyslov, V. M.,Syroeshkin, M. A.

, p. 1084 - 1092 (2021)

A complex between SiCl2 and CO of the 1:1 composition with coordination of the silylene to the C atom of carbon monoxide is detected in Ar matrices using FTIR spectroscopy. A positive shift of the ν(CO) band of the complex relative to the corre

-

Agre, C. L.,Hilling, W.

, p. 3899 - 3902 (1952)

-

Interactions of chloromethyldisilanes with tetrakis(dimethylamino)ethylene (TDAE), formation of [TDAE] [Si3Me2Cl7]

Knopf,Herzog,Roewer,Brendler,Rheinwald,Lang

, p. 14 - 22 (2002)

The chlorodisilanes SiClMe2-SiClMe2 (1), SiCl2Me-SiCl2Me (2), SiCl3-SiCl3 (3) and a 9:1 mixture of 2 and SiCl3-SiCl2Me (4) were reacted with the electron-rich alkene tetrakis-(dimethylamino)-ethylene (TDAE) in n-hexane as well as in polar solvents. While 1 gave no reaction at all, 3 underwent a disproportionation reaction into SiCl4 and Si(SiCl3)4. Also 2 and mixtures of 2 and 4 were disproportionated into MeSiCl3 (2a) and methylchlorooligosilanes. Additionally a crystalline mixture of Si3Me3Cl6 -TDAE (5a) plus Si3Me2Cl7 -TDAE (5b) was obtained by reaction of a 9:1 mixture of 2 and 4 with TDAE in n-hexane as well as in 1,2-dimethoxyethane. The reaction of 2 with TDAE in acetonitrile (MeCN) led to a crystalline precipitation of [TDAE]Cl2 -MeCN (6.MeCN) in addition to MeSiCl3 and methylchlorooligosilanes. The structures of 5b and 6.MeCN were determined by X-ray crystallography beside their NMR and IR spectroscopic characterization. Compound 5b crystallizes in the monoclinic space group P2/c (Z = 4), 6.MeCN in the orthorhombic space group Pna21 (Z = 4). The structure of 5b reveals a [TDAE].+ radical cation and a 1, 2-Me2Si3Cl7- anion with a pentacoordinated central silicon atom.

Baxter, G. P.,Weatherill, P. F.,Holmer, E. O.

, p. 1194 - 1197 (1920)

Gillot, B.,Souha, H.,Viale, D.

, (1992)

Si-C coupling reaction of polychloromethanes with HSiCl3 in the presence of Bu4PCl: Convenient synthetic method for bis(chlorosilyl)methanes

Jung, Dong Euy,Kang, Seung-Hyun,Han, Joon Soo,Lim, Weon Cheol,Park, Young-ae W.,Yoo, Bok Ryul

, p. 3901 - 3906 (2007)

Coupling reaction of polychloromethanes CH4-nCln (n = 2-4) with HSiCl3 in the presence of tetrabutylphosphonium chloride (Bu4PCl) as a catalyst occurred at temperatures ranging from 30 °C to 150 °C. The reactivity of polychloromethanes increases as the number of chlorine-substituents on the carbon increases. In the reactions of CCl4 with HSiCl3, a variety of coupling products such as bis(chlorosilyl)methanes CH2(SiCl3)(SiXCl2) [X = Cl (1a), H (1b)], (chlorosilyl)trichloromthanes Cl3CSiXCl2 [X = Cl (2a), H (2b)], and (chlorosilyl)dichloromthanes Cl2HCSiXCl2 [X = Cl (3a), H (3b)] were obtained along with reductive dechlorination products such as CHCl3 and CH2Cl2 depending on the reaction temperature. In the reaction of CCl4, 2a is formed at the initial stage of the coupling reaction and converted to give CHCl3 at low temperature of 30 °C, to give 1a, 3a, and CHCl3 at 60 °C, and to afford 1a as major product and CH2Cl2 in competition above 100 °C. Si-H bond containing silylmethanes can be formed by the H-Cl exchange reaction with HSiCl3. Reaction of CHCl3 with HSiCl3 took placed at 80 °C to give three compounds 1a, 3a, and CH2Cl2, and finally 3a was converted to give 1a and CH2Cl2 at longer reaction time. While the condition for the reaction of CH2Cl2 with HSiCl3 required a much higher temperature of 150 °C. Under the optimized conditions for synthesizing bis(chlorosilyl)methanes 1a,b, a mixture of 1a and 1b were obtained as major products in 65% (1a:1b = 64:1) and 47% (42:5) yields from the reaction of CCl4 and CHCl3 at 100 °C for 8 h, respectively, and in 41% (34:7) yield from that of CH2Cl2 at 170 °C for 12 h. In the Si-C coupling reaction of polychloromethanes with HSiCl3, it seems likely that a trichlorosilyl anion generated from the reaction of HSiCl3 with Bu4PCl is an important key intermediate.

Dyke, J. M.,Lee, E. P. F.,Morris, A.,Nyulaszi, L.

, p. 175 - 188 (1993)

-

Goubeau,Behr

, p. 2,6,9 (1953)

-

A vapor-solid strategy to silica sheathed metal nanostructures and microstructures via reactions of metal chlorides with silicon

Wang, Jin,Zhang, Haoxu,Ge, Jianping,Li, Yadong

, p. 807 - 811 (2006)

A facile vapor-solid strategy has been developed to prepare silica-sheathed metal micro/nanostructures with controllable shapes. As examples, silica-sheathed nickel nanowires (diameter ~50 nm), microcubes (edge length 1-3 μm), nanocubes (edge length ~200 nm) with an epitaxial tail (diameter 2 structures are discussed. The method is expected to be applied to a wider range of metals.

Anderson

, p. 3049 (1947)

Etching of hexagonal SiC surfaces in chlorine-containing gas media at ambient pressure

Zinovev,Moore,Hryn,Pellin

, p. 2242 - 2251 (2006)

The modification of the silicon carbide (4H-SiC) single-crystal surface in a chlorine-containing gas mixture at high temperature (800-1000 °C) and ambient pressure was investigated. The results of silicon carbide chlorination are found to strongly depend on the hexagonal surface orientation. Due to the thermodynamically more favorable reaction of chlorine with silicon rather than carbon, the C-terminated side ( 0 0 0 over(1, -) ) clearly undergoes considerable changes, resulting in coverage by a black-colored carbon film, whereas the Si-side (0 0 0 1) surprisingly remains visually untouched. With using X-ray photoelectron spectroscopy (XPS), angle-resolved XPS and SEM it is shown that this drastic change in behavior is associated with a different structure of oxicarbide/silicate adlayer formed on the C- and Si-terminated sides of silicon carbide surface during experimental pre-treatment and air exposure. The presence of oxygen bridges connecting the silicate adlayer with the bulk SiC in the case of Si-side inhibits the chlorination reaction and makes this surface strongly resistant to chlorine attack. Only some places on the Si-terminated side demonstrate traces of chlorine etching in the form of hexagonal-shaped voids, which are possibly initiated by distortion of the initial crystalline structure by micropipes. In contrast, a thin carbon layer resulted on the C-terminated side as a consequence of the chlorination process. XPS, ARXPS, SEM and Raman spectroscopy study of created film allows us to argue that it consists mainly of sp2-bonded carbon, mostly in the form of nanoscale graphene sheets. The absence of a protective oxygen bridge between the silicate adlayer and the bulk silicon carbide crystal leads to unlimited growth of carbon film on the SiC ( 0 0 0 over(1, -) ) side.

Hyde, K. R.,Hooper, E. W.,Waters, J.,Fletcher, J. M.

, p. 428 - 434 (1965)

Souha, H.,Weber, G.,Gillot, B.

, p. 215 - 222 (1990)

Frost,Rochow

, p. 201,203 (1958)

Reactivity of Cu3Si of different genesis towards copper(I) chloride

Souha,Bernard,Gaffer,Gillot

, p. 71 - 77 (2000)

A comparative study of the reactivity between copper(I) chloride and three types of Cu3Si obtained in a molten medium (Cu3Si-Ref) and from mechanical activation following an annealing process (Cu3Si-M2AP) or a self-propagating high-temperature synthesis (Cu3Si-MASHS) was performed by thermogravimetry under vacuum using non-isothermal and isothermal methods of kinetic measurement. It was established that for the three Cu3Si/CuCl systems, the acceleration and decay stages in the temperature range 145-215°C are very closely approximated by an equation of the Prout-Tompkins type where an autocatalytic process was proposed. The lower apparent activation energy obtained for the Cu3Si-MASHS/CuCl system (63 kJ mol-1 against 68 and 78 kJ mol-1 for Cu3Si-M2AP and Cu3Si-Ref, respectively) has been attributed to a small grain size which induces nanoscale contacts between reactants and impedes CuCl to sublime. (C) 2000 Elsevier Science B.V.

Kinetics and Mechanism of the Gas Phase Thermal Decomposition of Hexachlorodisilane in the Presence of Iodine

Doncaster, Alan M.,Walsh, Robin

, (1980)

The gas phase thermal reaction of Si2Cl6 with I2 has been investigated.Product analysis reveals the formation of SiCl4 and SiCl2I2.The reaction rate was found to obey the rate equation -dI

A Mild One-Pot Reduction of Phosphine(V) Oxides Affording Phosphines(III) and Their Metal Catalysts

Kapu?niak, ?ukasz,Plessow, Philipp N.,Trzybiński, Damian,Wo?niak, Krzysztof,Hofmann, Peter,Jolly, Phillip Iain

supporting information, p. 693 - 701 (2021/04/06)

The metal-free reduction of a range of phosphine(V) oxides employing oxalyl chloride as an activating agent and hexachlorodisilane as reducing reagent has been achieved under mild reaction conditions. The method was successfully applied to the reduction of industrial waste byproduct triphenylphosphine(V) oxide, closing the phosphorus cycle to cleanly regenerate triphenylphosphine(III). Mechanistic studies and quantum chemical calculations support the attack of the dissociated chloride anion of intermediated phosphonium salt at the silicon of the disilane as the rate-limiting step for deprotection. The exquisite purity of the resultant phosphine(III) ligands after the simple removal of volatiles under reduced pressure circumvents laborious purification prior to metalation and has permitted the facile formation of important transition metal catalysts.

Silicon Tetrakis(trifluoromethanesulfonate): A Simple Neutral Silane Acting as a Soft and Hard Lewis Superacid

Driess, Matthias,Hermannsdorfer, André

supporting information, p. 13656 - 13660 (2021/05/03)

A facile synthesis and isolation of pristine silicon tetrakis(trifluoromethanesulfonate), Si(OTf)4, is reported, acting as the first neutral silicon-based Lewis superacid suitable towards soft and hard Lewis bases. Its OTf groups have a dual function: they are excellent leaving groups and modulate the degree of reactivity towards soft and hard Lewis bases. Exposed to soft Lewis donors, Si(OTf)4 leads to [L2Si(OTf)4] complexes (L=isocyanide, thioether and carbonyl compounds) with retention of all Si?OTf bonds. In contrast, it can cleave C?X bonds (X=F, Cl) of hard organic Lewis bases with a high tendency to form SiX4 (X=F, Cl) after halide/triflate exchange. Most notable, Si(OTf)4 allows a gentle oxydefluorination of mono- and bis(trifluoromethyl)benzenes, resulting in the formation of the corresponding benzoylium species, which are stabilized by the weakly coordinating [Si(OTf)6] dianion.

Method for producing chloropropyltrichlorosilane

-

Paragraph 0038-0049; 0053-0059, (2020/03/14)

The invention provides an industrial production method of trichloro(3-chloropropyl)silane. A trichloro(3-chloropropyl)silane addition reaction coarse product is used as reaction substrates; the raw material reactants of chloropropene and trichlorosilane a

Process route upstream and downstream products

Process route

copper dichloride

copper dichloride

silicon
7440-21-3

silicon

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

Conditions
Conditions Yield
In neat (no solvent); reaction by heating of the mixture;;
nickel dichloride
83864-14-6

nickel dichloride

silicon
7440-21-3

silicon

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

nickel
7440-02-0

nickel

Conditions
Conditions Yield
In neat (no solvent, gas phase); heated at 700-900°C; SEM, XRD;
lead(II) chloride
7758-95-4

lead(II) chloride

silicon
7440-21-3

silicon

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

Conditions
Conditions Yield
In neat (no solvent); byproducts: Pb silicate; Electric Arc; local and slight reaction;;
In neat (no solvent); reaction by heating of the mixture;;
In neat (no solvent);
trimethylstannane
1631-73-8

trimethylstannane

bromo trichloro silane
13465-74-2

bromo trichloro silane

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

trichlorosilane
10025-78-2

trichlorosilane

monosilane
7440-21-3

monosilane

Conditions
Conditions Yield
In neat (no solvent); inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 3 h; not isolated; IR spectroscopy (identified 85% SiCl3H, 5% SiH4 and 5% SiCl4 in product mixt.);
phosgene
75-44-5

phosgene

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

Conditions
Conditions Yield
In neat (no solvent); treatment of precipitated SiO2 with COCl2 in presence of sugarcoal at 900-1000 °C;;
62%
In neat (no solvent); treatment of precipitated SiO2 with COCl2 at 900-1000 °C;;
23-31
cerium chloride
7790-86-5,15785-07-6

cerium chloride

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

Conditions
Conditions Yield
In neat (no solvent); heating of a mixture of SiO2 with an excess of CeCl3 in a slight oxidizing atmosphere;;
In neat (no solvent); heating of a mixture of SiO2 with an excess of CeCl3 in a slight oxidizing atmosphere;;
boron trichloride
10294-34-5

boron trichloride

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

Conditions
Conditions Yield
In neat (no solvent); passing BCl3 over SiO2 or porcelaine at bright red heat;;
In neat (no solvent); byproducts: B2O3; passing BCl3 over SiO2 in a Pt tube;;
In neat (no solvent); byproducts: B2O3; passing BCl3 over SiO2 in a Pt tube;;
In neat (no solvent); passing BCl3 over SiO2 or porcelaine at bright red heat;;
trichlorosilane
10025-78-2

trichlorosilane

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

hydrogen
1333-74-0

hydrogen

silicon
7440-21-3

silicon

Conditions
Conditions Yield
equil. reaction, at 800-1100 K;
diazoacetic acid ethyl ester
623-73-4

diazoacetic acid ethyl ester

trichlorosilane
10025-78-2

trichlorosilane

germaniumtetrachloride
10038-98-9

germaniumtetrachloride

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

Conditions
Conditions Yield
In neat (no solvent); byproducts: N2, ClCH2COOCH2CH3; diazoester adding to a mixt. of silane and germane in a molar ratio 1:1:1, allowing to react for 48 h at 20°C; isolated by distn.;
70%
magnesium silicide
22831-39-6

magnesium silicide

trichlorosilane
10025-78-2

trichlorosilane

hydrogen
1333-74-0

hydrogen

hydrogenchloride
7647-01-0,15364-23-5

hydrogenchloride

tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

monosilane
7440-21-3

monosilane

magnesium chloride
7786-30-3

magnesium chloride

silicon
7440-21-3

silicon

Conditions
Conditions Yield
In gas; heating SiHCl3 and H2 at 500°C in a reactor, passing over a Mg2Si charge which was heated upto 220°C, react. time: 4 h, condensing exit gases in liq. N2 traps; detn. by gas chromy., cooling the Mg2Si charge to room temp. under H2, deposition of Si on the reactor walls;

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