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12033-60-2

12033-60-2

Identification

  • Product Name:silicon nitride

  • CAS Number: 12033-60-2

  • EINECS:234-787-9

  • Molecular Weight:45.116

  • Molecular Formula: Si3N4

  • HS Code:

  • Mol File:12033-60-2.mol

Synonyms:

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Safety information and MSDS view more

  • Signal Word:No signal word.

  • Hazard Statement:none

  • First-aid measures: General adviceConsult a physician. Show this safety data sheet to the doctor in attendance.If inhaled If breathed in, move person into fresh air. If not breathing, give artificial respiration. Consult a physician. In case of skin contact Wash off with soap and plenty of water. Consult a physician. In case of eye contact Rinse thoroughly with plenty of water for at least 15 minutes and consult a physician. If swallowed Never give anything by mouth to an unconscious person. Rinse mouth with water. Consult a physician.

  • Fire-fighting measures: Suitable extinguishing media Use water spray, alcohol-resistant foam, dry chemical or carbon dioxide. Wear self-contained breathing apparatus for firefighting if necessary.

  • Accidental release measures: Use personal protective equipment. Avoid dust formation. Avoid breathing vapours, mist or gas. Ensure adequate ventilation. Evacuate personnel to safe areas. Avoid breathing dust. For personal protection see section 8. Prevent further leakage or spillage if safe to do so. Do not let product enter drains. Discharge into the environment must be avoided. Pick up and arrange disposal. Sweep up and shovel. Keep in suitable, closed containers for disposal.

  • Handling and storage: Avoid contact with skin and eyes. Avoid formation of dust and aerosols. Avoid exposure - obtain special instructions before use.Provide appropriate exhaust ventilation at places where dust is formed. For precautions see section 2.2. Store in cool place. Keep container tightly closed in a dry and well-ventilated place.

  • Exposure controls/personal protection:Occupational Exposure limit valuesBiological limit values Handle in accordance with good industrial hygiene and safety practice. Wash hands before breaks and at the end of workday. Eye/face protection Safety glasses with side-shields conforming to EN166. Use equipment for eye protection tested and approved under appropriate government standards such as NIOSH (US) or EN 166(EU). Skin protection Wear impervious clothing. The type of protective equipment must be selected according to the concentration and amount of the dangerous substance at the specific workplace. Handle with gloves. Gloves must be inspected prior to use. Use proper glove removal technique(without touching glove's outer surface) to avoid skin contact with this product. Dispose of contaminated gloves after use in accordance with applicable laws and good laboratory practices. Wash and dry hands. The selected protective gloves have to satisfy the specifications of EU Directive 89/686/EEC and the standard EN 374 derived from it. Respiratory protection Wear dust mask when handling large quantities. Thermal hazards

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Relevant articles and documentsAll total 7 Articles be found

HNSi; ν1 emission band by high resolution Fourier transform spectroscopy

Elhanine, M.,Farrenq, R.,Guelachvili, G.

, p. 2529 - 2531 (1991)

The emission spectrum of the fundamental vibration-rotation ν1 band (NH stretch) of iminosilicon HNSi has been observed near 2.7μm by high resolution Fourier transform spectroscopy from a mixture of N2 + SiH4 excited in a radio frequency discharge.This is the first spectroscopic observation of this molecule in the gas phase.Molecular constants ?, B, D, H are reported.Calculated microwave transitions which should be helpful for the investigation and the possible identification of HNSi in astrophysical sources are also given.

Reactions of atomic silicon and germanium with ammonia: A matrix-isolation FTIR and theoretical study

Chen, Mohua,Zheng, Aihua,Lu, Hao,Zhou, Mingfei

, p. 3077 - 3083 (2002)

The reactions of Si atoms with NH3 molecules have been studied using matrix-isolation FTIR spectroscopy and density functional theoretical calculations. Silicon atoms reacted with NH3 to form the SiNH3 complex spontaneousl

The microwave spectrum of the SiN(2Σ+) radical

Saito, Shuji,Endo, Yasuki,Hirota, Eizi

, p. 6447 - 6450 (1983)

The microwave absorption spectrum of the SiN radical has been detected in a dc glow discharge in a SiCl4 or SiH4/N2 mixture.The three rotational transitions N = 2a source-frequency modulation microwave spectrometer.The rotational constant, the centrifugal distortion constant, the spin-rotation coupling constant, and the magnetic hyperfine coupling constants b and c and the electric quadrupole coupling constant of the nitrogen nucleus have been precisely determined.The electronic structure of the SiN molecule has been briefly discussed using the magnetic hyperfine coupling constants and also the quadrupole coupling constant of 14N.

Horie, O.,Potzinger, P.,Reimann, B.

, p. 231 - 236 (1986)

Gas-Phase Chemistry of HSiS- and HSiNH-: Ions Related to Silathioformaldehyde and the Silaazomethine of Formaldehyde

Damrauer, Robert,Krempp, Michele,O'Hair, Richard A. J.

, p. 1998 - 2005 (2007/10/02)

Anions related to silathioformaldehyde (H2Si=Si) and the silaazomethine of formaldehyde (H2Si=NH) have been prepared and studied using flowing afterglow selected ion flow tube techniques.The connectivities of these anions are shown in experimental studies to be - and -.In addition, ab initio computational studies demonstrate that these are the most stable anion isomers.These anions are prepared by both collisionally-induced dissociation and direct source reactions.The anions resulting from the later preparations have been submitted to reaction chemistry studies with CO2, COS, CS2, SO2, O2, and C6F6.Comparisons with earlier studies of HSiO- are made in terms of a simple mechanistic picture.

Process route upstream and downstream products

Process route

nitrogen
7727-37-9

nitrogen

monosilane
7440-21-3

monosilane

silicon nitride
12033-60-2

silicon nitride

Conditions
Conditions Yield
In neat (no solvent); radio frequency discharge (plasma pressure 70 mTorr, rf power 720 W, N2/SiH4=16);
In neat (no solvent, gas phase); in a dc glow discharge cell, partial pressures of SiH4 and N2 were 15 and 10 mTorr.;
tetrachlorosilane
10026-04-7,53609-55-5

tetrachlorosilane

nitrogen
7727-37-9

nitrogen

silicon nitride
12033-60-2

silicon nitride

Conditions
Conditions Yield
In neat (no solvent, gas phase); in a dc glow discharge cell, partial pressures of SiCl4 and N2 were 15 and 10 mTorr.;
nitrogen

nitrogen

monosilane
7440-21-3

monosilane

silicon nitride
12033-60-2

silicon nitride

Conditions
Conditions Yield
In gaseous matrix; byproducts: H2, Si; in a pyrex glass flow tube at 298(2) K and 400 Pa; N atoms generated in a microwave discharge through a N2/He mixt.; not isolated, H2 detected by mass spect., SiN and Si detected by chemiluminiscence; Kinetics;
silicon nitrogen hydride
53826-03-2

silicon nitrogen hydride

silicon nitride
12033-60-2

silicon nitride

Conditions
Conditions Yield
In solid matrix; Irradiation (UV/VIS); irradiation in an Ar matrix at 193 nm for a long time; detected by UV and IR;
dinitrogen monoxide
10024-97-2

dinitrogen monoxide

silicon
7440-21-3

silicon

silicon nitride
12033-60-2

silicon nitride

Conditions
Conditions Yield
In gaseous matrix; byproducts: NO; production of Si atoms on irradiation of Si rod (4 mJ, 7 ns, 266 nm Nd:YAG laser), reacting (crossed, pulsed supersonic molecular beams, Si in Ar/He or H2, N2O in He); not isolated, detected by laser induced fluorescence spectroscopy;
HNSi*H<sup>(1+)</sup>
113159-97-0

HNSi*H(1+)

iminosilicon
12033-60-2

iminosilicon

Ammonium

Ammonium

Conditions
Conditions Yield
With ammonia; In gas; gas phase reaction at 296+/-2 K investigated; Kinetics;
HSiNH<sup>(1-)</sup>

HSiNH(1-)

iminosilicon
12033-60-2

iminosilicon

prosiloxane

prosiloxane

HO<sub>2</sub>Si<sup>(1-)</sup>

HO2Si(1-)

HSi(NH)O<sup>(1-)</sup>
166542-97-8

HSi(NH)O(1-)

HSi(NH)S<sup>(1-)</sup>

HSi(NH)S(1-)

Conditions
Conditions Yield
In gaseous matrix; byproducts: HSO2(1-), NSO(1-), SO; reaction of in situ prepared HSiNH(1-) with SO2 in flowing afterglow selected ion flow tube (300 K, He pressure 0.5 Torr and flow of ca. 225 cm**3/s); further product; mass spectroscopy; Kinetics;
HSiNH<sup>(1-)</sup>

HSiNH(1-)

carbon dioxide
124-38-9,18923-20-1

carbon dioxide

iminosilicon
12033-60-2

iminosilicon

prosiloxane

prosiloxane

HO<sub>2</sub>Si<sup>(1-)</sup>

HO2Si(1-)

HSi(NH)O<sup>(1-)</sup>
166542-97-8

HSi(NH)O(1-)

carbon monoxide
201230-82-2

carbon monoxide

Conditions
Conditions Yield
In gaseous matrix; byproducts: HCO2(1-), NCO(1-), HCN; reaction of in situ prepared HSiNH(1-) with CO2 in flowing afterglow selected ion flow tube (300 K, He pressure 0.5 Torr and flow of ca. 225 cm**3/s); mass spectroscopy; Kinetics;
trimethylsilylazide
4648-54-8

trimethylsilylazide

iminosilicon
12033-60-2

iminosilicon

Conditions
Conditions Yield
In neat (no solvent, gas phase); byproducts: N2, (CH3)2HSiNCH2; gas-phase flash pyrolysis (1100 K, 10**-2 mbar); react. mechanism discussed; not isolated; detection by photoelectron spectrum;
iminosilicon
12033-60-2

iminosilicon

Conditions
Conditions Yield
In solid matrix; byproducts: H2; Irradiation (UV/VIS); photolysis λ>290 of SiNH3; full-arc λ>250 nm photolysis; not isolated; detn. by FTIR;

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