12259-25-5Relevant articles and documents
Vaporization and Stability of Phases in the SrS-Ga2S3 System
Kapias, Piotr,Edwards, Jimmie G.
, p. 3649 - 3656 (1988)
Vaporization of solid samples whose initial composition was SrGa2S4 were studied in the temperature range 1256-1364 K by the simultaneous Knudsen- and torsion-effusion methods.The effusing vapor was taken to be composed of Ga2S(g) and S2(g) in equimolar a
Chemistry and thermodynamics of solid and vapor phases in the barium-sulfide, gallium-sulfide system
Mukdeeprom-Burckel,Edwards
, p. 163 - 172 (1990)
The technologically important BaS-Ga2S3 solid system was studied and interpreted with a generalized acid-base theory counting BaS(s) as a strong base and Ga2S3(s) as an acid. The strongest bonding in any MS-Ga2S3 system was found. Vaporization of solid samples whose initial composition was BaGa2S4(s) was studied in the temperature range 1234-1361 K by the simultaneous Knudsen-effusion and Volmer-effusion methods. The sample vaporized incongruently and the composition of the solid changed successively to yield a number of phases The vaporization reactions and the average third-law ΔvH°(298 K) in kJ are presented, as well as the enthalpies of ternary phases with respect to those of the binary constituents BaS(s) and Ga2S3(s) in kJ per mole of Ga2S3.
Vaporization Chemistry, Kinetics, and Thermodynamics of Compounds in the Manganese Monosulfide-Gallium Sesquisulfide System
Gates, Alfred S.,Edwards, Jimmie G.
, p. 3263 - 3270 (1980)
The vaporization reactions of MnGa2S4(s) and Mn3Ga2S6(s) were established to be 3/2 MnGa2S4(s)=1/2 Mn3Ga2S6(s) + Ga2S(g) + S2(g) and Mn3Ga2S6(s)=3MnS(s) + Ga2S(g)+ S2(g) in the temperature range 1150-1315 K.The simultaneous Knudsen-effusion and dynamic to
Hydrodesulfurization of dibenzothiophene and 4,6-dimethyl-dibenzothiophene: Gallium effect over NiMo/Al2O3 sulfided catalysts
Altamirano, Efrain,De Los Reyes, Jose Antonio,Murrieta, Florentino,Vrinat, Michel
, p. 403 - 412 (2005)
The influence of gallium on alumina-supported NiMo catalysts was investigated by correlating their physicochemical properties with the hydrodesulfurization (HDS) activity of model molecules. The Ga-γ-Al 2O3 supports were prepared by
Incongruent effusion of ZnGa8S13(s)
Edwards, Jimmie G.,Ferro, Daniela,Weber, J. K. Richard
, p. 369 - 386 (1989)
The chemistry and thermodynamics of vaporization in a Knudsen effusion cell of the phase ZnGa8S13 was studied in the range 1115 - 1246 K where the vapor pressure ranged from 0.25 to 10.0 Pa. Samples prepared by sealed-tube methods and characterized by X-ray diffraction were studied by the simultaneous Knudsen and torsion (Volmer) effusion method. ZnGa8S13(s) effused incongruently in equilibrium with a saturated solid solution (sss) of ZnS in Ga2S3, Ga2S(g), Zn(g), and S2(g), always on the ZnS-Ga2S3 join. Ga2S3(sss) then effused with net loss of ZnS to the vapor until the composition of Ga2S3 was reached. Vapor analysis by combining measured rates of mass loss and momentum loss allowed analysis of the vapor and calculation of equilibrium constants of the effusion equations.
