Table
(Ion : Ioff) and threshold voltages (VT) for OTFTs fabricated with
semiconductors 3–8
2
Charge carrier mobilities (m), current on/off ratios
J. M. Fre
´
chet, Chem. Rev., 2007, 107, 1066; (c) B. A. Jones,
A. Facchetti, M. R. Wasielewski and T. J. Marks, J. Am. Chem.
Soc., 2007, 129, 15259.
2 For recent studies, see: (a) S. Subramanian, S. P. Park, S. R. Parkin,
V. Podzorov, T. N. Jackson and E. J. Anthony, J. Am. Chem. Soc.,
2008, 130, 2706; (b) M. L. Tang, A. D. Reichardt, N. Miyaki,
R. M. Stoltenberg and Z. Bao, J. Am. Chem. Soc., 2008, 130,
6064; (c) C. B. Nielsen, A. Angerhofer, K. A. Abboud and
J. R. Reynolds, J. Am. Chem. Soc., 2008, 130, 9734;
(d) M. L. Navacchia, M. Melucci, L. Favaretto, A. Zanelli,
M. Gazzano, A. Bongini and G. Barbarella, Org. Lett., 2008, 10,
3665; (e) P.-L. T. Boudreault, S. Wakim, N. Blouin, M. Simard,
C. Tessier, Y. Tao and M. Leclerc, J. Am. Chem. Soc., 2007, 129,
9125; (f) R. P. Ortiz, J. Casado, V. Hernandez, J. T. L. Navarrete,
P. M. Viruela, E. Orti, K. Takimiya and T. Otsubo, Angew. Chem.,
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M. D. Watson, Org. Lett., 2007, 9, 4499; (h) R. P. Ortiz, J. Casado,
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S. Hotta, G. Zotti, S. Zecchin and B. Vercelli, Adv. Funct. Mater.,
2006, 16, 531; (i) A. Berlin, S. Grimoldi, G. Zotti, R. M. Osuna,
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J. T. L. Navarrete, J. Phys. Chem. B, 2005, 109, 22308;
(j) N. Drolet, J.-F. Morin, N. Leclerc, S. Wakim, Y. Tao and
M. Leclerc, Adv. Funct. Mater., 2005, 15, 1671.
3 (a) D. H. Kim, D. Y. Lee, H. S. Lee, W. H. Lee, Y. H. Kim, J. I. Han
and K. Cho, Adv. Mater., 2007, 19, 678; (b) Y. Li, Y. Wu, P. Liu,
Z. Prostran, S. Gardner and B. S. Ong, Chem. Mater., 2007, 19, 418.
4 I. Mcculloch, M. Heeney, C. Bailey, K. Genevicius, I. Macdonald,
M. Shkunov, D. Sparrowe, S. Tierney, R. Wagner, W. Zhang,
M. L. Chabinyc, R. J. Kline, M. D. Mcgehee and M. F. Toney,
Nat. Mater., 2006, 5, 328.
5 (a) K. Xiao, Y. Liu, T. Qi, W. Zhang, F. Wang, J. Gao, W. Qiu,
Y. Ma, G. Cui, S. Chen, X. Zhan, G. Yu, J. Qin, W. Hu and
D. Zhu, J. Am. Chem. Soc., 2005, 127, 13281; (b) also see examples
in ref. 9.
Compound Substrate TDa/1C mb/cm2 Vꢀ1 sꢀ1 Ion : Ioff VT/V
3 (n-type)
HMDS
25
50
70
90
70
25
60
1.5 ꢃ 10ꢀ3
1 ꢃ 10ꢀ4
0.03
106
107
107
107
106
106
105
+35
+68
+42
ꢀ53
ꢀ48
ꢀ72
ꢀ84
3 (n-type)c HMDS
4 (n-type)
5 (p-type)
6 (p-type)
7 (p-type)
8 (p-type)
HMDS
HMDS
Bare
Bare
Bare
0.01
2 ꢃ 10ꢀ4
1 ꢃ 10ꢀ4
1 ꢃ 10ꢀ5
a
b
Substrate deposition temperature. Calculated in the saturation
c
regime. Typical standard deviations are o10%. Measured in air.
HOMO–LUMO energy gaps are ranked as 6 B 3 o 4 o 5 o
8 o 7, which is consistent with the values obtained from
optical spectroscopy.
The semiconducting properties of these systems were
assessed in top-contact OTFTs fabricated by vapor-depositing
3–8 films on bare and hexamethyldisilazane (HMDS)-treated
SiO2/p+–Si substrates, followed by Au deposition through a
shadow mask to define the source and drain electrodes. OTFT
characterization was performed under vacuum and pre-
liminary OTFT data are summarized in Table 2. Perfluoro-
benzoyl substitution is found to be effective in promoting
n-type transport in 3 and 4, with an electron mobility of
0.0015 and 0.03 cm2 Vꢀ1 sꢀ1, respectively. To our knowledge,
both are the first DTT-based semiconductors exhibiting
electron transport in OTFT devices.18 Compared to DFCO-4T,12
the lower mobilities could be ascribed to the larger interplanar
p–p separation distance (3.74 A for 3, 3.56 A for 4, vs. 3.5 A
for DFCO-4T) caused by the non-negligible F–H interactions
in 3 and 4.19 Interestingly, the intermolecular Hꢂ ꢂ ꢂF inter-
actions in asymmetric 4, empowering the shortest DTT cores
distance in this study, reveals the potential utility of this
asymmetric design for other n-type systems. In contrast, the
dibenzoyl and di(2-thienyl)carbonyl substituted DTT and TT
derivatives exhibit exclusively p-type transport, with the best
hole mobility of 0.01 cm2 Vꢀ1 sꢀ1 observed for DB-DTT (5),
which is comparable to that of DPCO-4T (0.04 cm2 Vꢀ1 sꢀ1).12
In summary, a convenient/efficient/cost-effective one-pot
[1+1+1] synthesis of DTT has been achieved, which can also
enable the realization of asymmetric and fused thiophenes.
Diperfluorobenzoyl DFB-DTT (3) and asymmetric FBB-DTT
(4) exhibit n-type transport with mobility up to 0.03 cm2 Vꢀ1 sꢀ1
whereas DB-DTT (5) shows only hole transport.19 These
results provide new understanding of the structural character-
istics of DTT-based molecules and the advantages of using this
stable core for designing more soluble derivatives.
6 (a) M. M. Payne, S. R. Parkin, J. E. Anthony, C.-C. Kuo and
T. N. Jackson, J. Am. Chem. Soc., 2005, 127, 4986; (b) M.-C. Chen,
C. Kim, S.-Y. Chen, Y.-J. Chiang, M.-C. Chung, A. Facchetti and
T. J. Marks, J. Mater. Chem., 2008, 18, 1029.
7 (a) Y. Sakamoto, T. Suzuki, M. Kobayashi, Y. Gao, Y. Fukai,
Y. Inoue, F. Sato and S. Tokito, J. Am. Chem. Soc., 2004, 126,
8138; (b) A. Facchetti, M. Mushrush, M.-H. Yoon,
G. R. Hutchison, M. A. Ratner and T. J. Marks, J. Am. Chem.
Soc., 2004, 126, 13859; (c) M.-H. Yoon, A. Facchetti, C. L. Stern
and T. J. Marks, J. Am. Chem. Soc., 2006, 128, 5792;
(d) M.-H. Yoon, C. Kim, A. Facchetti and T. J. Marks, J. Am.
Chem. Soc., 2006, 128, 12851.
8 (a) M.-H. Yoon, S. A. DiBenedetto, A. Facchetti and T. J. Marks,
J. Am. Chem. Soc., 2005, 127, 1348; (b) ref. 7a.
9 (a) For three-fused ring review, see: T. Ozturk, E. Erdal Ertasb and
O. Mert, Tetrahedron, 2005, 61, 11055; (b) for five-fused ring, see:
X. Zhang, A. P. Cote and A. Matzger, J. Am. Chem. Soc., 2005, 127,
10502; (c) For 6 fused ring see: T. Okamoto, K. Kudoh, A. Wakamiya
and S. Yamaguchi, Org. Lett., 2005, 7, 5301; (d) For 7 fused ring see:
M. He and F. Zhang, J. Org. Chem., 2007, 72, 442, and ref. 5.
10 A. Facchetti, M.-H. Yoon, C. L Stern, G. R. Hutchison, M. A.
Ratner and T. J. Marks, J. Am. Chem. Soc., 2004, 126, 13480.
11 A. Facchetti, M.-H. Yoon, C. L. Stern, H. E. Katz and
T. J. Marks, Angew. Chem., Int. Ed., 2003, 42, 3900.
12 J. A. Letizia, A. Facchetti, C. L. Stern, M. A. Ratner and
T. J. Marks, J. Am. Chem. Soc., 2005, 127, 13476.
13 B. A. Jones, A. Facchetti, T. J. Marks and W. R. Wasielewski,
Chem. Mater., 2007, 19, 2703.
We thank the National Science Council, Taiwan, Republic
of China (Grant Numbers NSC95-2113-M-008-008-MY2,
NSC97-2113-M-008-003 and NSC97-2628-M-008-019) for
support. Financial assistance for this research was partially
provided by the NSF-MRSEC program through the
Northwestern Materials Research Center (DMR-0520513).
14 (a) F. De Jong and M. J. Janssen, J. Org. Chem., 1971, 36, 1645;
(b) F. Allared, J. Hellberg and T. Remonen, Tetrahedron Lett.,
2002, 43, 1553; (c) J. Frey, A. D. Bond and A. B. Holmes, Chem.
Commun., 2002, 2424.
15 The average total yield of DTT we obtained following Holmes’
four steps in ref. 14c is o30%.
16 See ESIw for details.
17 Y. Mazaki and K. Kobayashi, Tetrahedron Lett., 1989, 30, 3315.
18 Ambipolar transport in these DTT materials were not observed
and details of the studies will be discussed in the future full paper.
19 In addition to the larger intermolecular core distance, the lower
conjugation of DTTs may be responsible for the lower mobilities.
Notes and references
1 For recent discussions of this topic, see: (a) C. Kim, A. Facchetti
and T. J. Marks, Science, 2007, 318, 76; (b) A. R. Murphy and
ꢁc
This journal is The Royal Society of Chemistry 2009
1848 | Chem. Commun., 2009, 1846–1848