
European Journal of Inorganic Chemistry p. 2975 - 2986 (2010)
Update date:2022-08-05
Topics:
Jakob, Alexander
Rueffer, Tobias
Schmidt, Heike
Djiele, Patrice
Koerbitz, Kathrin
Ecorchard, Petra
Haase, Thomas
Kohse-Hoeinghaus, Katharina
Fruehauf, Swantje
Waechtler, Thomas
Schulz, Stefan
Gessner, Thomas
Lang, Heinrich
The synthesis of complexes [Ag2X] [X = O2CCO 2 (3a), C4O4 (3b), O2CCH 2CO2 (3c), O2C(CH2J 2CO2 (3d), cis-O2CCH= CHCO2 (3e), trans-O2CCH=CHCO2 (3f), para-O2CC 6H4CO2 (3g)] and [(R3P) mAgXAg(PR3)m] [R = Ph, X = C4O 4, m = 2 (10a), m = 3 (10b); R = nBu, X = O2CCH 2CO2, m = 2 (10c), m = 3 (10d); X = O2C(CH 2J2CO2, m = 1 (10e), m = 2 (10f), m = 3 (10g); X = cis-O2CCH=CHCO2, m = 1. (10h), m = 2 (101), m = 3 (10j); X = trans-O2CCH=CHCO2, m = 1 (10k), m = 2 (101), m = 3 (10m); X = para-O2CC6H4CO2, m = 2 (10n)] is reported. Compoundds 3a-3g are accessible by the reaction of [AgNO3] (1) with H2X (2a-2g), while 10a-10n can be prepared by treatment of 3a-3g with PR3 (9a, R = Ph; 9b, R = nBu) in the ratios of 1:2, 1:4, or 1:6. When [{Ag(bipym)(NO3)H 2O)n] (6) (bipym = bipyrimidine) reacts with (HNEt 3J2(O2CCO2) (7), [{Ag(bipym)Ag(O2CCO2)·4H2O} n] (5) and [{(bipym)(Ag(O2CCO2H)) 2}n] (8) are formed. The molecular structures for 5, 6, and 8 in the solid state are reported. For 5, the formation of a 3D network is characteristic, in which ID chains of {Ag(bipym) Ag (O2CCO 2)}n interact with each other through π-π interactions between the bipym ligands to extend in one direction, while H 2O molecules act as connectivities thorugh the intermolecular H-bridge formation to extend in the other direction. Polymeric 6 consists of 2D layers formed, by individual ID chains of {Ag(bipym)Ag(bipym)}n with π-π interactions between the bipym ligands. In 8, {(HO2CCO 2)Ag(bipym)Ag(O2CCO2H)} units undergo intermolecular H-bridge formation, to create 2D layers, π π interactions between, individual bipym ligands produce a 3D network. The use of 1 Od as a CVD precursor in the deposition of Ag on glass by using a direct liquid injection system is discussed. The Ag films show a rough appearance and contain C impurities. The use of 10e and 10f as spin-coating precursors for the deposition of Ag on TiN-coated oxidized Si wafers is reported.
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